-
Mingqi Chen,
W. Sutton,
I. Smorchkova,
B. Heying,
Wen-Ben Luo,
V. Gambin,
F. Oshita,
R. Tsai, M. Wojtowicz,
R. Kagiwada,
A. Oki,
Jenshan Lin
[show abstract]
[hide abstract]
ABSTRACT: This letter presents an ultra-wideband low noise amplifier (LNA) using gallium-nitride (GaN) high-electron mobility transistors (HEMT) technology. A -3 dB bandwidth of 1-25 GHz with 13 dB peak power gain is achieved using a modified resistive-feedback topology. To obtain such a wide bandwidth, several bandwidth enhancement techniques are utilized. An inductor connected to the source of the input transistor ensures good input matching (|S<sub>11</sub>| <; -9 dB) across the entire bandwidth. The shunt feedback loop and the inductive source degeneration minimize all the required inductor values. This GaN HEMT LNA is believed to have the widest bandwidth among all GaN HEMT monolithic microwave integrated circuit (MMIC) LNAs reported to date. With 3.3 dB minimum noise figure (F), 33.5 dBm maximum output-referred third-order intercept point (OIP3), 20 dBm maximum output-referred 1 dB compression point (Output P1 dB), this MMIC amplifier is comparable in performance to distributed amplifiers (DAs) but with significantly lower power consumption and smaller area.
IEEE Microwave and Wireless Components Letters 11/2010; · 1.72 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: This paper describes our team's efforts to develop a manufacturable 0.2 um T-gate process for GaN HEMTs that enables high performance and enhanced reliability at high frequencies. Our team has demonstrated highly repeatable and uniform HEMT performance measured at 40 GHz with 3.6 W/mm median output power densities, 36.6% median PAE, and 8.4 dB associated gain. RF-driven, temperature-accelerated life tests show a mean-time-to-failure (MTTF) > 6 × 10<sup>7</sup> hours at 150°C junction temperature. Using this GaN HEMT process our team has demonstrated V-band circuits with output power of 1.13 W (2.83 W/mm) with 23.3 % power-added-efficiency measured under CW operation. Furthermore, by increasing the drain bias to 38 V, the circuit demonstrated state-of-the-art power density of 3.96 W/mm (1.58 W total power).
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International; 06/2010
-
Y.C. Chou,
D.L. Leung,
M. Biedenbender,
D. Buttari,
D.C. Eng,
R.S. Tsai,
C.H. Lin,
L.S. Lee,
X.B. Mei, M. Wojtowicz,
M.E. Barsky,
R. Lai,
A.K. Oki,
T.R. Block
[show abstract]
[hide abstract]
ABSTRACT: Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T<sub>ambient</sub> of 280°C projects the median-time-to-failure exceeding 1×10<sup>6</sup> hours at T<sub>channel</sub> of 125°C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.
Reliability Physics Symposium (IRPS), 2010 IEEE International; 06/2010
-
[show abstract]
[hide abstract]
ABSTRACT: In this paper, we present three ultra wide bandwidth low-noise amplifiers (LNAs) using dual-gate AlGaN/GaN HEMT devices. The single-stage, resistive feedback amplifiers target two different frequency bands: two LNAs operate in 0.3-4 GHz and one LNA is in 1.2-18 GHz. All three LNAs are capable of better than 13:1 bandwidth. The first low frequency amplifier uses a microstrip design and achieves 17.7 dB flat gain between 300 MHz-3 GHz, and 1.2 dB minimum noise figure around 1.3 GHz. The second 0.3-4 GHz LNA uses coplanar waveguide transmission lines and demonstrates 18 dB flat gain and 1.5 dB noise figure between 2 and 5 GHz. The high frequency microstrip-type LNA shows an average of 13 dB gain and between 2-3 dB noise figure across the band. The robust LNAs can be operated under various bias voltages while similar gain and noise figure performance are maintained.
IEEE Transactions on Microwave Theory and Techniques 01/2010; · 1.85 Impact Factor
-
C.H. Lin,
X.B. Mei,
Y.C. Chou,
L.S. Lee,
J.M. Yang,
M.Y. Nishimoto,
P.H. Liu,
R. To,
A. Cavus,
R. Tsai, M. Wojtowicz,
R. Lai
[show abstract]
[hide abstract]
ABSTRACT: For the first time, the sub-mW operation of InP HEMT X-band low-noise amplifiers on 4-inch InP wafer was demonstrated. With optimized non-alloyed ohmic contact, gate recess profile and epitaxial layer design, the InP HEMT achieves average peak transconductance of 1150 mS/mm at V<sub>DS</sub> = 0.3 V. The mean current cut off frequency is above 150 GHz at V<sub>DS</sub> = 0.3 V and I<sub>DS</sub> = 150 mA/mm. The developed low power InP HEMTs enables the manufacturing of low-noise amplifiers for low power applications. The superior performance of X-band low-noise amplifiers was also demonstrated. Operating at a supply voltage of 0.25 V and drain current of 3.75 mA with DC power of 0.937 mW, the low noise amplifier exhibits noise figure of 1.6 dB and gain of 11 dB at frequencies from 6 to 12 GHz.
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE; 11/2009
-
[show abstract]
[hide abstract]
ABSTRACT: This paper reports on a S-, C-band low-noise power amplifier (LNPA) which achieves a sub-0.2 dB noise figure (NF) over a multi-octave band and a saturated output power (Psat) of 2 W at a cool temperature of -30degC . The GaN MMIC is based on a 0.2 mum AlGaN/GaN-SiC HEMT technology with an f<sub>T</sub> ~ 75 GHz. At a cool temperature of -30degC and a power bias of 15 V-400 mA, the MMIC achieves 0.25-0.45 dB average NF over a 2-8 GHz band and a linear P<sub>1dB</sub> of 32.8 dBm ( ~ 2 W) with 25% power-added efficiency (PAE). At a medium bias of 12 V-200 mA, the amplifier achieves 0.1-0.2 dB average NF across the same band and a P<sub>1dB</sub> of 32.2 dBm (1.66 W) with 35% PAE. The corresponding saturated output power is greater than 2 W. At a low noise bias of 5 V-200 mA, a remarkable 0.05-0.15 dB average NF is achieved with a P<sub>1dB</sub> > 24 dBm and PAE ~ 33%. These results are believed to be the lowest NF ever reported for a multi-octave fully matched MMIC amplifier capable of > 2 W of output power.
IEEE Journal of Solid-State Circuits 11/2009; · 3.23 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: This paper reports on multi-decade bandwidth GaN HEMT cascode-distributed power amplifier designs which achieve performance from base-band to over 20 GHz. The GaN MMICs are based on a 0.2 mum AlGaN/GaN low noise T-gate HEMT technology with an fT ~ 75 GHz. To increase the MMIC power capability of this low noise GaN technology, a cascode DA design approach was employed which can operate at twice the recommended Vds voltage. The resulting amplifiers achieve 1-4 Watts of saturated CW power from 100 MHz to over 20 GHz at an operating voltage of 30 V. Typical OIP3 > 40 dBm and NF of 3 dB were also achieved. Compared to equivalent designs in a similar 0.15 mum GaAs PHEMT low noise technology fabricated in the same foundry, these multi-decade GaN HEMT MMIC DAs obtain 6 dB higher output power and 5.8-6.6 dB higher OIP3 while achieving comparable gain, noise figure, and bandwidth. These are believed to be the first multi-decade GaN power distributed amplifiers that have been demonstrated and can enable future ultra-wideband frequency agile and software defined radio systems that require baseband to microwave frequency operation.
Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE; 07/2009
-
Y.C. Chou,
P. Chang-Chien,
J.M. Yang,
M.Y. Nishimoto,
K. Hennig,
M.D. Lange,
X. Zeng,
M.R. Parlee,
C.H. Lin,
L.S. Lee,
P.S. Nam, M. Wojtowicz,
M.E. Barsky,
A.K. Oki,
J.B. Boos,
B.R. Bennett,
N.A. Papanicolaou
[show abstract]
[hide abstract]
ABSTRACT: A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
-
[show abstract]
[hide abstract]
ABSTRACT: A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output power of +11 dBm at 53 GHz with an estimated phase noise of -97 dBc/Hz at 1 MHz offset based on on-wafer measurement. To the best of our knowledge, this is the highest frequency VCO ever reported for GaN technology with a high output power at V-band, without using any buffer amplifier. This work demonstrates the potential of applying GaN technology to millimeter wave band, high power, and low phase noise frequency sources applications.
IEEE Microwave and Wireless Components Letters 07/2008; · 1.72 Impact Factor
-
Y.C. Chou,
L.J. Lee,
J.M. Yang,
M.D. Lange,
P.S. Nam,
C.H. Lin,
H. Quach,
A.L. Gutierrez,
M.E. Barsky, M. Wojtowicz,
A.K. Oki,
T.R. Block,
J.B. Boos,
B.R. Bennett,
N.A. Papanicolaou
[show abstract]
[hide abstract]
ABSTRACT: Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance strongly depends on the gate metallization. This information is essential for the manufacturability of 0.1 mum AlSb/InAs HEMTs for ultralow-power applications.
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on; 06/2008
-
C. Chou,
M.D. Lange,
B.R. Bennett,
J.B. Boos,
J.M. Yang,
N.A. Papanicolaou,
C.H. Lin,
L.J. Lee,
P.S. Nam,
A.L. Gutierrez,
D.S. Farkas,
R.S. Tsai, M. Wojtowicz,
T.P. Chin,
A.K. Oki
[show abstract]
[hide abstract]
ABSTRACT: A 0.1 μm In<sub>02</sub>Al<sub>08</sub>Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In<sub>02</sub>Al<sub>08</sub>Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in order to mitigate the oxidation incurred by the AlSb layer. In this work, we have demonstrated excellent dc and rf performance on both devices and low-noise amplifiers (LNAs) using 0.1 μm In<sub>02</sub>Al<sub>08</sub>Sb-InAs HEMTs on 3-inch GaAs substrates. This accomplishment is crucial for phased-array applications with ultralow-power and oxidation-free requirements.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
-
[show abstract]
[hide abstract]
ABSTRACT: This paper presents a broadband low noise amplifier MMIC utilizing 0.2 urn AlGaN/GaN HEMT technology. The single-stage, resistive feedback amplifier is designed in co-planar waveguide (CPW) topology. It uses dual-gate devices with on-chip drain bias network to achieve 18 dB flat gain between 300 MHz -4 GHz. Measured noise figure is around 1.5 dB between 2 and 5 GHz, and better than 2 dB between 1 and 2 GHz. The amplifier is capable of 25 dBm saturated output power with 1 dB compression point around 20 dBm across the band. Due to high breakdown voltage of GaN devices, the LNA can withstand high input power and shows no sign of degradation.
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE; 11/2007
-
C.H. Lin,
Y.C. Chou,
M.D. Lange,
J.M. Yang,
M.Y. Nishimoto,
J. Lee,
P.S. Nam,
J.B. Boos,
B.R. Bennett,
N.A. Papanicolaou,
R.S. Tsai,
A.L. Gutierrez,
M.E. Barsky,
T.P. Chin, M. Wojtowicz,
R. Lai,
A.K. Oki
[show abstract]
[hide abstract]
ABSTRACT: -A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n<sup>+</sup>-InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE; 11/2007
-
D.S. Farkas,
J. Uyeda,
J. Wang,
W.B. Luo,
R. Elmadjian,
D. Eaves,
K. Luo,
R. Lai,
M. Barsky, M. Wojtowicz,
A. Oki
[show abstract]
[hide abstract]
ABSTRACT: In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman's 0.15 um GaAs HEMT technology and enables a high level of MMIC compaction which will substantially reduce the size and cost of MMICs. A key feature of this technology is the ability to isolate vertically integrated components of a MMIC' with separate ground planes allowing circuit compaction while maintaining high isolation.
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE; 11/2007
-
Y.C. Chou,
D.L. Leung,
W.B. Luo,
J.M. Yang,
C.H. Lin,
M.D. Lange,
Q.W. Kan,
D.S. Farkas,
J.B. Boos,
B.R. Bennett,
A.L. Gutierrez,
D.C. Eng, M. Wojtowicz,
A. Oki,
T. Block
[show abstract]
[hide abstract]
ABSTRACT: Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0.1 μm AISb/lnAs HEMT LNAs was demonstrated. The results show a median time to failure of approximately 2x10<sup>6</sup> hours at T<sub>junction</sub> of 85°C with activation energy of 1.5 eV. High-reliability performance is essential for successful insertion of 0.1 μm AISb/lnAs HEMT LNAs for military and space applications with ultralow-power requirements.
ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]; 11/2007
-
[show abstract]
[hide abstract]
ABSTRACT: This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and a PldB of 2 watts. The GaN MMIC utilizes a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~75 GHz. At high power bias (15 V/400 mA), the MMIC amplifier achieves sub-dB NF ~0.7-0.9 dB over a 2-8 GHz band. At low bias(12 V, 200 mA), the amplifier achieves ~0.5dB over the same band. This is believe to be the lowest NF reported for a multi-octave MMIC amplifier in the S-and C-band frequency range. In addition, the amplifier obtains ultra high linearity with an OIP3 of 43.2-46.5 dBm and P1 dB of 32.8-33.2 dBm (2 watts) over a 2-6 GHz bandwidth. The PAE at P1 dB is ~28.6-31%. The Psat is 34.2 dBm with 39% PAE @ 2 GHz. To our knowledge, this is the first report of a multi-octave MMIC amplifier with sub-dB NF and a pout >2 Watt.
Microwave Symposium, 2007. IEEE/MTT-S International; 07/2007
-
[show abstract]
[hide abstract]
ABSTRACT: A 0.2 mum T-gate GaN-SiC HEMT technology with fT-70 GHz are used to achieve GaN Darlington MMIC Amplifiers with bandwidths up to 18 GHz. Both conventional Darlington and Cascoded-Darlington feedback designs were fabricated and measured. The Darlington Cascode obtains 14.7 dB gain and a bandwidth of 0.05-12.3 GHz. The conventional Darlington obtains 11 dB gain and a record 0.05-18.7 GHz multi-decade bandwidth for a GaN Darlington. These are the highest BWs reported for GaN Darlington MMIC amplifiers. In addition, P1dB ~1 Watt and > 40 dBm OIP3 was obtained beyond 4 GHz. To our knowledge, these results represent the widest bandwidths so far demonstrated for fully monolithic GaN Darlington MMICs.
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE; 07/2007
-
[show abstract]
[hide abstract]
ABSTRACT: Using harmonic balance simulations, we have examined the survivability limiting mechanisms of a 0.2 mum T-gate AlGaN/GaN HEMT device under RF overdrive. Simulations are performed using a 4-finger 200 mum AlGaN/GaN HEMT device model. Two catastrophic failure mechanisms are identified. At low quiescent drain-source voltages (<10 V), the forward turn-on of the gate diode may exceed the burnout limit, resulting in a sudden failure. Increasing the quiescent drain-source voltage increases the peak drain-gate voltage and changes the failure mechanism to gate-drain reverse breakdown. The model is consistent with experimental measurements.
Microwave Symposium, 2007. IEEE/MTT-S International; 07/2007
-
Yeong-Chang Chou,
J.M. Yang,
C.H. Lin,
J. Lee,
M. Lange,
R. Tsai,
P. Nam,
M. Nishimoto,
A. Gutierrez,
H. Quach,
R. Lai,
D. Farkas, M. Wojtowicz,
P. Chin,
M. Barsky,
A. Oki,
J.B. Boos,
B.R. Bennett
[show abstract]
[hide abstract]
ABSTRACT: This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology warrants the successful insertion of AlSb/InAs HEMT MMICs for military and space applications with ultra-low power requirements.
Microwave Symposium, 2007. IEEE/MTT-S International; 07/2007
-
R. Lai,
Y.C. Chou,
L.J. Lee,
P.H. Liu,
D. Leung,
Q. Kan,
X. Mei,
C.H. Lin,
D. Farkas,
M. Barsky,
D. Eng,
A. Cavus,
M. Lange,
P. Chin, M. Wojtowicz,
T. Block,
A. Oki
[show abstract]
[hide abstract]
ABSTRACT: Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on; 06/2007
