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ABSTRACT: We report a fabrication technology for the production of large
quantities of GaInAs/InP quantum dot structures with typical lateral
sizes in the range of 20-30 nm. This technique includes the use of
sintered aerosol Ag particles as an etching mask in a plasma etching
process and epitaxial overgrowth. Transmission electron microscopy shows
that the sintered silver particles are almost spherical and
monocrystalline. The etching process results in free standing columns
with densities around 10<sup>9</sup> cm<sup>-2</sup>. Scanning electron
microscopy indicated a narrow deviation in width as well as in height of
the columns. Scanning tunneling spectroscopy revealed both electron
depletion and a slight widening of the band gap in InP columns. Both as
etch and overgrown GaInAs/InP columns were characterized by
low-temperature cathodoluminescence. The overgrown dots showed a
significant improvement in quantum efficiency as compared to the as
etched columns
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on; 04/1994
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DETERMINING NANOSCALE PHYSICAL PROPERTIES OF MATERIALS BY MICROSCOPY AND SPECTROSCOPY; 01/1994
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ABSTRACT: The authors present a novel technology for the fabrication of quantum dots (QDs) structures based on the deposition of ultrafine aerosol Ag particles onto the surface of Ga<sub>0.47</sub>In<sub>0.53 </sub>As/InP quantum well structures grown by metal organic vapor phase epitaxy. The quantum well structures consisted of 3 quantum wells (QWs) with nominal thickness of 3, 8 and 18 monolayers with the thinnest QW being on top of the structure. A reference layer of Ga<sub>0.47</sub>In <sub>0.53</sub>As was grown below QWs for lattice matching control. The QWs were separated by 15 nm barriers of InP and the cladding layer was about 66 nm in thickness. Silver particles 40 nm in diameter were used as an etching mask. QW thickness dependence of quenching of QD luminescence was observed
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
