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Publications (3)0 Total impact

  • W. Li, E.I. El-Masry
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    ABSTRACT: A method for the analysis of distributed MOSFET filters is presented. The effects of parasitic capacitances on distributed high-pass MOSFET filters are investigated. Three schemes of MOSFET configurations functioning as distributed high-pass filters are presented and analyzed to demonstrate the method and to illustrate the parasitic effects. The analyses are verified by SPICE simulation and the very high frequency numerical model of a MOSFET given by L.J. Pu and Y. Tsividis (1990)
    IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications 04/1992;
  • W. Li, E.I. El-Masry
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    ABSTRACT: The effects of parasitic capacitances on distributed high-pass MOSFET filters are investigated. Three schemes of MOSFET configurations functioning as distributed high-pass filters are analyzed to demonstrate the parasitic effects. It is found that one high-pass configuration is superior to the other two. It maintains the high-pass characteristics regardless of the effects of parasitic capacitances
    Circuits and Systems, 1991., IEEE International Sympoisum on; 07/1991
  • W. Li, E.I. El-Masry
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    ABSTRACT: A novel method for analyzing distributed MOSFET filters is presented. The transfer functions of single-MOSFET high-pass and low-pass filters in biquadratic form are obtained using the method. The characteristic frequency and the Q -factor of the high-pass and low-pass filters are directly related to the standard electrical, geometrical, and process parameters of an MOS transistor. It is found that the characteristic frequency of the filter is around three times the intrinsic cutoff frequency of a MOS transistor. To obtain higher-order high-pass and low-pass filters with minimal number of transistors, cascade structures for single-MOSFET filters are proposed. It is shown that MOS transistors in a cascaded chain are required to have a certain channel width ratio to achieve impedance matching. A sixth-order filter can be realized using only three distributed MOS transistors
    Circuits and Systems, 1991., IEEE International Sympoisum on; 07/1991