Radiation Effects and Defects in Solids 07/1994; 130-131(1):175-186. · 0.40 Impact Factor
ABSTRACT: Results from systematic computer simulation studies of boron,
phosphorus, and arsenic implants into silicon that are important to
integrated circuit technology are discussed in terms of interatomic
potential, electronic energy loss, and target orientation effects.
Detailed crystallographic analyses of axial and planar channeling are
presented. The time evolution of an interesting collision cascade which
depicts accidental channeling and dechanneling for a 5-keV boron implant
is also presented. An examination of the binary collision cascade code
MARLOWE is made and applied to simulate hyperchanneling of high-energy
alpha particles in silicon
IEEE Transactions on Electron Devices 03/1992; · 2.32 Impact Factor
ABSTRACT: We have extended the mechanical equilibrium theory of J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)] (MB) for determining the critical thickness in semiconducting heteroepitaxial films by including the effect of the Peierls barrier. The new formulation allows an evaluation of the dependence of critical thickness on the orientation of epithreading dislocation, and a comparison of theoretical predictions with measurements indicates that a knowledge of the epithreading dislocation orientation is necessary in predicting critical thicknesses in heteroepitaxial structures. In this formulation, the effect of the Peierls barrier is to bring the theoretical critical thicknesses closer to experimental values as compared to the predictions of the MB theory.
Applied Physics Letters 10/1990; · 3.84 Impact Factor