A.A. Ivanov

Publications (3)4.08 Total impact

• Article: Hall effect and negative magnetoresistance in thin crystals of NbSe3

  A. A. Sinchenko, Yu. I. Latyshev, A. P. Orlov, A. A. Ivanov, P. Monceau
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  ABSTRACT: We have measured the Hall effect and the transverse magnetoresistance in NbSe3 single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe3 single crystals with a thickness less than 5μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing.
  Physics of Condensed Matter 04/2012; 63(2):199-204. · 1.53 Impact Factor
• Article: Hall effect in the pinned and sliding charge density wave state of NbSe(3).

  A A Sinchenko, R V Chernikov, A A Ivanov, P Monceau, Th Crozes, S A Brazovskii
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  ABSTRACT: Results of Hall effect measurements are reported both below and above the threshold electric field, E(t), for depinning the low temperature charge density wave (CDW) in NbSe(3) in a wide temperature range. At low electric fields, below E(t), we have observed a change in the sign of the Hall voltage at all temperatures lower than T(p2). Comparison between the Hall effect and the magnetoresistance behavior indicates that the n-type conductivity in the low magnetic field range differs qualitatively from the p-type conductivity in the high field range. We demonstrate that at low temperature the CDW motion significantly alters the Hall voltage. These results indicate that, in NbSe(3), the CDW in the sliding state interacts essentially with holes. Possible mechanisms of this effect are discussed.
  Journal of Physics Condensed Matter 10/2009; 21(43):435601. · 2.55 Impact Factor
• Article: Hall effect and negative magnetoresistance in thin crystals of NbSe 3

  A. A. Sinchenko, Yu. I. Latyshev, A. P. Orlov, A. A. Ivanov, P. Monceau
  [show abstract] [hide abstract]
  ABSTRACT: We have measured the Hall effect and the transverse magnetoresistance in NbSe 3 single crystals. In the liquid helium temperature range we observed an absolute negative magnetoresistance (NMR) — the value of the resistance under magnetic field being much lower than that at zero field — in NbSe 3 single crystals with a thickness less than 5 μm with the magnetic field oriented in the (b, c) plane. We show that this NMR effect is observed in the magnetic field range in which the Hall constant changes its sign. The results are qualitatively explained by the change of the surface scattering contribution to the magnetoconductance in the magnetic field range near the Hall voltage zero crossing. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008
  The European Physical Journal B - Condensed Matter and Complex Systems. 63(2):199-204.