Publications (2)3.84 Total impact
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Article: Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system
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ABSTRACT: In this letter, we studied the polarization dependent current excited by near- and mid-infrared radiations in InAs nanowires patterned quasi two-dimensional structures. We observed a current with a predominated direction along the wires at normal incidence of mid-infrared radiation and attributed it to the ratchet effect. Photogalvanic effect induced by obliquely incident excitation is also observed. Under near-infrared excitation, however, the normal incident ratchet effect becomes insignificant and the linear photogalvanic effect at oblique incidence dominantly contributes to the electric current.Applied Physics Letters 07/2011; 99(3):032106-032106-3. · 3.84 Impact Factor -
Article: Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi two-dimensional electron system
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ABSTRACT: In this work we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the $C_{2v}$ symmetry of the structure, which could be attributed to the formation of a quasi two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi two-dimensional structure with the QWR layer deposition thickness.04/2011;
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Institutions
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2011
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Chinese Academy of Sciences
- Key Laboratory of Semiconductor Materials
Beijing, Beijing Shi, China
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