P.D. Chow

TRW Automotive, Livonia, Michigan, United States

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Publications (29)12.67 Total impact

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    ABSTRACT: Presented is a 3 watt Q-band PHEMT MMIC power amplifier module with a peak efficiency of 25% at 44.5 GHz, believed to be the highest reported at this power level and frequency. The waveguide power amplifier module features the use of thinned 2-mil GaAs MMICs with off-chip output matching and combining on a 5-mil alumina substrate
    Microwave Symposium Digest, 1997., IEEE MTT-S International; 07/1997
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    ABSTRACT: EHF military satellite communications uplinks require (ground, airborne, or shipborne) transmitters capable of rapid beam steering over a wide scan angle. This allows precise alignment between source and receiver at all times, even if one or both is in rapid motion. In addition, it allows a number of signals directed at different receivers at arbitrary locations in space to be multiplexed real-time. Multiple-element MMIC modules for a high-power, high-efficiency 44 GHz transmit phased array are demonstrated. Two-element modules, employing TRW HEMT-based MMICs, have demonstrated 28 dBm output power per element and 21-23% module power-added efficiency. We believe these to be the highest output power and power-added efficiency achieved by MMIC-based EHF phased array modules to-date
    Phased Array Systems and Technology, 1996., IEEE International Symposium on; 11/1996
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    ABSTRACT: Presented is an 850 mW Q-band PHEMT MMIC power amplifier with a peak efficiency of 34% at 45.5 GHz, believed to be the highest reported at this power level and frequency. The compact amplifier (3.6 mm by 1.6 mm) features the use of thinned 2-mil GaAs substrate and off-chip output matching and combining on a 5-mil alumina substrate
    Microwave Symposium Digest, 1996., IEEE MTT-S International; 07/1996
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    ABSTRACT: A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz
    Microwave Symposium Digest, 1996., IEEE MTT-S International; 07/1996
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    ABSTRACT: A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995; 06/1995
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    ABSTRACT: The authors present a 20 GHz downconverter and a 44 GHz upconverter for a low cost miniaturized transceiver for EHF SATCOM terminal applications. The hardware features a set of passivated pseudomorphic InGaAs HEMT MMICs including a 20 GHz balanced low noise amplifier and a 44 GHz 100 mW driver amplifier. The upconverter input and the LO input of the downconverter feature built-in-test (BIT) with on-chip detectors. The downconverter is packaged in a low temperature co-fired ceramic (LTCC) substrate, with integrated RF and DC interconnects, printed resistors, and a buried stripline IF filter
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995; 06/1995
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    ABSTRACT: Recent development on MMIC power amplifier has pushed the power-added efficiency (PAE) of 1-W amplifier to 29.4%. The power amplifier, using 0.15-μm InGaAs T-gate PHEMT devices, can deliver 1.2 W with 25% efficiency at 40 GHz when the drain is biased at 5 V. When the drain voltage drops to 4 V the output power is 1 W with 9-db associated gain and 29.4% PAE. The measured linear gain is averaged to be 12.5 db from 38-44 GHz
    IEEE Microwave and Guided Wave Letters 02/1995;
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    ABSTRACT: A broadband monolithic power amplifier has been developed using 0.15 μm T-gate pseudomorphic InGaAs HEMT. When biased for class A operation, the amplifier has a measured small signal gain of 12.4 to 13.1 dB in the frequency range of 40 to 46 GHz. Saturated output power of 1.01 watts with 7.03 dB associated gain and 15.1% power-added efficiency at 44.5 GHz has also been measured
    Microwave Symposium Digest, 1994., IEEE MTT-S International; 06/1994
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    ABSTRACT: Presented is a set of passivated pseudomorphic InGaAs HEMT MMICs for insertion into a low cost miniaturized transceiver for EHF SATCOM terminal applications. A 20 GHz MMIC balanced LNA with 1.8 dB noise figure and 31 dB gain, a K-Band downconverter, and a 22 GHz doubler chain are for insertion into the receiving subsystem. The 22 GHz doubler chain, a 44 GHz doubler chain, and a 44 GHz driver amplifier with +21 dBm of output power are for insertion into the upconverter-transmitter subsystem. The 22 GHz doubler chain and 44 GHz driver amplifier feature couplers and diode detectors integrated on-chip for built-in-test (BIT) application
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994; 06/1994
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    ABSTRACT: A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave applications. The gain and noise performance is comparable with the best reported results of the monolithic W-band LNA using GaAs-based PM HEMTs even at this first iteration phase of the development. The HEMTs discussed consume only 30% of the DC power typically needed in the GaAs-based HEMT LNAs with the same device periphery and design approach.
    Microwave Symposium Digest, 1993., IEEE MTT-S International; 02/1993
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    ABSTRACT: Reports the W -band and D -band performance of 0.1-μm T-gate pseudomorphic In<sub>0.53</sub>Al<sub>0.47</sub>As/In <sub>0.60</sub>GaAs high electron mobility transistors (HEMTs). The device achieved 1.3-dB noise figure and 8.2-dB associated gain when biased and tuned for a minimum noise figure at 95 GHz. It achieved 7.3-dB gain when biased and tuned for gain at 141.5 GHz. The two-stage hybrid low-noise amplifier (LNA) fabricated with these devices demonstrated a minimum noise figure of 2.6 dB and 14.2 dB associated gain at a waveguide interface at 92 GHz
    Microwave Symposium Digest, 1992., IEEE MTT-S International; 07/1992
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    ABSTRACT: A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992; 07/1992
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    ABSTRACT: The authors report the effect of profile design and MBE (molecular beam epitaxy) growth conditions on the material characteristics and device performance of W -band and D -band InGaAs/InAlAs/InP HEMTs (high electron mobility transistors). The performance advantage of pseudomorphic channels compared to lattice-matched devices is significant in these devices. Using lattice-matched In<sub>0.53</sub>Ga<sub>0.47</sub>As channels, a noise figure of 1.7 dB with 7.7-dB associated gain at 93 GHz has been achieved. However, using pseudomorphic In<sub>0.60</sub>Ga<sub>0.40</sub>As channels, a 1.3-dB noise figure with 8.2-dB associated gain at 93.5 GHz has been achieved. The authors have also measured 7.3-dB gain at 141.5 GHz using In<sub>0.60</sub>Ga <sub>0.40</sub>As devices
    Indium Phosphide and Related Materials, 1992., Fourth International Conference on; 05/1992
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    ABSTRACT: High-performance W -band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development
    IEEE Transactions on Microwave Theory and Techniques 04/1992; · 2.23 Impact Factor
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    ABSTRACT: The authors have successfully developed a 0.1 μm T-gate planar doped pseudomorphic InGaAs high-electron-mobility transistor (HEMT) process for the fabrication of low noise and power devices with record W -band performance. The low noise device has a noise figure of 2.3 dB with an associated gain of 7.5 dB at 92 GHz. When optimized for power using a planar doped channel, the device exhibited an output power of 62.7 mW with 4.0 dB gain and 13.2% power added efficiency at 94 GHz. When tuned for minimum noise, the power device achieved a noise figure of 3.0 dB with 7.4 dB associated gain at 94 GHz
    High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in; 09/1991
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    ABSTRACT: The fabrication of lattice-matched InGaAs-InAlAs-InP high-electron-mobility transistors (HEMTs) with excellent W -band performance is reported. At 93 GHz a device minimum noise figure of 1.7 dB with 7.7 dB associated gain was measured for 0.15-μm T-gate HEMTs. A maximum cutoff frequency of 200 GHz was obtained, and the 12.2-dB small-signal gain measured at 94 GHz extrapolates to a maximum frequency of oscillation of 380 GHz. A two-stage MIC amplifier demonstrated a minimum noise figure of 3.0 dB and 16.0 dB associated gain at 93.4 GHz using these devices. A single-ended active mixer was also fabricated using lattice-matched 0.15-μm HEMTs, and a conversion gain of 2.4 dB with 7.3 dB single-sideband noise figure at 94 GHz was measured
    High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in; 09/1991
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    ABSTRACT: State-of-the-art performance has been achieved at W -band on a two-stage LNA low-noise amplifier) and on a single-ended active mixer fabricated using 0.15 μm T-gate InP HEMT (high electron mobility transistor) devices. The LNA showed a 3-dB noise figure and 16.5 dB associated gain at the waveguide interface at 93 GHz. The active HEMT mixer has 2.4-dB conversion gain and 7.3-dB noise figure at 94 GHz RF and 85 GHz LO (local oscillator). At the same RF and LO frequencies, the complete downconverter showed 3.6-dB noise figure and 17.8-dB conversion gain at the waveguide input and output
    Microwave Symposium Digest, 1991., IEEE MTT-S International; 08/1991
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    ABSTRACT: A high-performance W -band monolithic two-stage LNA (low-noise amplifier) based on pseudomorphic InGaAs/GaAs HEMT (high electron mobility transistor) device has been developed. This amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz. The noise figure is 5.5 dB from 91 to 95 GHz. This is the best reported performance of a W -band monolithic LNA. The measured results of this MMIC (monolithic microwave integrated circuit) LNA rival those of some reported hybrid LNAs. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first-pass success of this LNA chip design indicates the importance of a rigorous analysis/design methodology in the millimeter-wave monolithic IC development
    Microwave Symposium Digest, 1991., IEEE MTT-S International; 08/1991
  • J.A. Lester, W.L. Jones, P.D. Chow
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    ABSTRACT: GaAs-based InGaAs pseudomorphic high electron mobility transistors (HEMTs) have demonstrated superior low-noise and high-power capabilities at microwave and millimeter-wave frequencies. The authors present a pair of 3-stage amplifiers fabricated with the same process demonstrating excellent noise and power performance. A K -band fully monolithic LNA (low-noise amplifier) has been demonstrated greater than 33 dB gain over a 4 GHz bandwidth with a noise figure of less than 2 dB over 2 GHz. A Q -band power amplifier has demonstrated an output power of 13.3 dBm at 1 dB compression with 25.3 dB of gain and a saturated output power of 16.1 dBm at 40 GHz. These amplifiers are designed for insertion into future EHF satellite communication ground terminals
    Microwave Symposium Digest, 1991., IEEE MTT-S International; 08/1991
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    ABSTRACT: State of the art W-band low noise MMICs have been fabricated using pseudomorphic InGaAs HEMTs with a 0.1 mu m gate length. A two-stage LNA fabricated using this process has achieved a gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz, with a noise figure of 5.5 dB at 94 GHz. These results are the best reported to date for any MMIC LNA fabricated on both GaAs and InP substrates at this frequency range.
    Electronics Letters 07/1991; · 1.04 Impact Factor