Xuelei Liang, Brent A Sperling,
Irene Calizo,
Guangjun Cheng,
Christina Ann Hacker,
Qin Zhang,
Yaw Obeng,
Kai Yan,
Hailin Peng,
Qiliang Li,
Xiaoxiao Zhu,
Hui Yuan,
Angela R Hight Walker,
Zhongfan Liu,
Lian-Mao Peng,
Curt A Richter
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ABSTRACT: We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.
ACS Nano 11/2011; 5(11):9144-53. · 10.77 Impact Factor
