Publications (2)6.83 Total impact
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Article: Capacity based nondestructive readout for complementary resistive switches.
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ABSTRACT: Complementary resistive switches (CRS) were recently suggested to solve the sneak path problem of larger passive memory arrays. CRS cells consist of an antiserial setup of two bipolar resistive switching cells. The conventional destructive readout for CRS cells is based on a current measurement which makes a considerable call on the switching endurance. Here, we report a new approach for a nondestructive readout (NDRO) based on a capacity measurement. We suggest a concept of an alternative setup of a CRS cell in which both resistive switching cells have similar switching properties but are distinguishable by different capacities. The new approach has the potential of an energy saving and fast readout procedure without decreasing cycling performance and is not limited by the switching kinetics for integrated passive memory arrays.Nanotechnology 09/2011; 22(39):395203. · 3.98 Impact Factor -
Article: Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays
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ABSTRACT: Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially connected memristive elements. Here, we demonstrate the vertical integration of CRS cells based on Cu/SiO<sub>2</sub>/Pt bipolar resistive switches. CRS cells were fabricated and electrically characterized, showing high resistance ratios (R<sub>off</sub>/R<sub>on</sub> >; 1500) and fast switching speed (<; 120 μs). The results are one step further toward the realization of high-density passive nanocrossbar-array-based gigabit memory devices.IEEE Electron Device Letters 03/2011; · 2.85 Impact Factor
