S Eyhusen

Publications (3)5.48 Total impact

• Source

  Available from: Jani Kotakoski

  Article: An accurate measurement of electron beam induced displacement cross sections for single-layer graphene

  J. C. Meyer, F. Eder, S. Kurasch, V. Skakalova, J. Kotakoski, H. -J. Park, S. Roth, A. Chuvilin, S. Eyhusen, G. Benner, A. V. Krasheninnikov, U. Kaiser
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  ABSTRACT: We present an accurate measurement and a quantitative analysis of electron-beam induced displacements of carbon atoms in single-layer graphene. We directly measure the atomic displacement ("knock-on") cross section by counting the lost atoms as a function of the electron beam energy and applied dose. Further, we separate knock-on damage (originating from the collision of the beam electrons with the nucleus of the target atom) from other radiation damage mechanisms (e.g. ionization damage or chemical etching) by the comparison of ordinary (12C) and heavy (13C) graphene. Our analysis shows that a static lattice approximation is not sufficient to describe knock-on damage in this material, while a very good agreement between calculated and experimental cross sections is obtained if lattice vibrations are taken into account.
  03/2012;
• Article: Transmission electron microscopy at 20 kV for imaging and spectroscopy.

  U Kaiser, J Biskupek, J C Meyer, J Leschner, L Lechner, H Rose, M Stöger-Pollach, A N Khlobystov, P Hartel, H Müller, M Haider, S Eyhusen, G Benner
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  ABSTRACT: The electron optical performance of a transmission electron microscope (TEM) is characterized for direct spatial imaging and spectroscopy using electrons with energies as low as 20 keV. The highly stable instrument is equipped with an electrostatic monochromator and a C(S)-corrector. At 20 kV it shows high image contrast even for single-layer graphene with a lattice transfer of 213 pm (tilted illumination). For 4 nm thick Si, the 200 reflections (271.5 pm) were directly transferred (axial illumination). We show at 20 kV that radiation-sensitive fullerenes (C(60)) within a carbon nanotube container withstand an about two orders of magnitude higher electron dose than at 80 kV. In spectroscopy mode, the monochromated low-energy electron beam enables the acquisition of EELS spectra up to very high energy losses with exceptionally low background noise. Using Si and Ge, we show that 20 kV TEM allows the determination of dielectric properties and narrow band gaps, which were not accessible by TEM so far. These very first results demonstrate that low kV TEM is an exciting new tool for determination of structural and electronic properties of different types of nano-materials.
  Ultramicroscopy 07/2011; 111(8):1239-46. · 2.47 Impact Factor
• Article: High Resolution 20kV Transmission Electron Microscopy of Nanosystems – First Results Towards Sub Ångstrøm Low Voltage EM (SALVE – Microscopy)

  U Kaiser, J Meyer, J Biskupek, J Leschner, AN Khlobystov, H Müller, P Hartel, M Haider, S Eyhusen, G Benner
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  ABSTRACT: Physical Sciences SymposiaHigh Resolution 20kV Transmission Electron Microscopy of Nanosystems – First Results Towards Sub Ångstrøm Low Voltage EM (SALVE – Microscopy)Article author querykaiser u [PubMed] [Google Scholar]meyer j [PubMed] [Google Scholar]biskupek j [PubMed] [Google Scholar]leschner j [PubMed] [Google Scholar]khlobystov a [PubMed] [Google Scholar]müller h [PubMed] [Google Scholar]hartel p [PubMed] [Google Scholar]haider m [PubMed] [Google Scholar]eyhusen s [PubMed] [Google Scholar]benner g [PubMed] [Google Scholar]U Kaisera1, J Meyera1, J Biskupeka1, J Leschnera1, AN Khlobystova2, H Müllera3, P Hartela3, M Haidera3, S Eyhusena4 and G Bennera4a1 University of Ulm, Germany
  Microscopy and Microanalysis 06/2010; 16:1702 - 1703. · 3.01 Impact Factor