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ABSTRACT: Photonic integration requires a versatile packaging technology that enables low-loss interconnects between photonic chips in three-dimensional configurations. In this paper we introduce the concept of photonic wire bonding, where polymer waveguides with three-dimensional freeform geometries are used to bridge the gap between nanophotonic circuits located on different chips. In a proof-of-principle experiment, we demonstrate the fabrication of single-mode photonic wire bonds (PWB) by direct-write two-photon lithography. First-generation prototypes allow for efficient broadband coupling with average insertion losses of only 1.6 dB in the C-band and can carry wavelength-division multiplexing signals with multi-Tbit/s data rates. Photonic wire bonding is well suited for automated mass production, and we expect the technology to enable optical multi-chip systems with enhanced performance and flexibility.
Optics Express 07/2012; 20(16):17667-77. · 3.59 Impact Factor
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ABSTRACT: Photonic wire bonds (PWB) enable single-mode chip-to-chip interconnects that are suitable for mass production. We demonstrate for the first time a single-mode PWB link between two different nanophotonic silicon-on-insulator chips.
Group IV Photonics (GFP), 2011 8th IEEE International Conference on; 10/2011
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A Melikyan, N Lindenmann,
S Walheim,
P M Leufke,
S Ulrich,
J Ye,
P Vincze,
H Hahn,
Th Schimmel,
C Koos,
W Freude,
J Leuthold
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ABSTRACT: An electrically controlled ultra-compact surface plasmon polariton absorption modulator (SPPAM) is proposed. The device can be as small as a few micrometers depending on the required extinction ratio and the acceptable loss. The device allows for operation far beyond 100 Gbit/s, being only limited by RC time constants. The absorption modulator comprises a stack of metal/insulator/metal-oxide/metal layers, which support a strongly confined asymmetric surface plasmon polariton (SPP) in the 1.55 μm telecommunication wavelength window. Absorption modulation is achieved by electrically modulating the free carrier density in the intermediate metal-oxide layer. The concept is supported by proof-of-principle experiments.
Optics Express 04/2011; 19(9):8855-69. · 3.59 Impact Factor
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T. Vallaitis,
D. Hillerkuss,
J.-S. Li,
R. Bonk, N. Lindenmann,
P. Dumon,
R. Baets,
M.L. Scimeca,
I. Biaggio,
F. Diederich,
C. Koos,
W. Freude,
J. Leuthold
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ABSTRACT: Error-free wavelength conversion using cross-phase modulation (XPM) is shown in a passive 4 mm long silicon-organic hybrid waveguide. This is the first XPM demonstration in a CMOS compatible chip for bitrates of 42.7 Gbit/s at communication wavelengths.
Photonics in Switching, 2009. PS '09. International Conference on; 10/2009
