Marie-Estelle Gueunier-Farret

Publications (3)5.45 Total impact

• Source

  Available from: Pere Roca Cabarrocas

  Article: Characterization of silicon heterojunctions for solar cells.

  Jean-Paul Kleider, Jose Alvarez, Alexander Vitalievitch Ankudinov, Alexander Sergeevitch Gudovskikh, Ekaterina Vladimirovna Gushchina, Martin Labrune, Olga Alexandrovna Maslova, Wilfried Favre, Marie-Estelle Gueunier-Farret, Pere Roca I Cabarrocas, Eugene Ivanovitch Terukov
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  ABSTRACT: Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
  Nanoscale Research Letters 01/2011; 6(1):152. · 2.73 Impact Factor
• Source

  Available from: Pere Roca Cabarrocas

  Article: Characterization of silicon heterojunctions for solar cells

  Jean-Paul Kleider, Jose Alvarez, Alexander Ankudinov, Alexander Gudovskikh, Ekaterina Gushchina, Martin Labrune, Olga Maslova, Wilfried Favre, Marie-Estelle Gueunier-Farret, Roca i Cabarrocas Pere, Eugene Terukov
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  ABSTRACT: Abstract Conductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si. This is in good agreement with planar conductance measurements that show a large interface conductance. It is demonstrated that these features are related to the existence of a strong inversion layer of holes at the c-Si surface of (p) a-Si:H/(n) c-Si structures, and to a strong inversion layer of electrons at the c-Si surface of (n) a-Si:H/(p) c-Si heterojunctions. These are intimately related to the band offsets, which allows us to determine these parameters with good precision.
  Nanoscale Research Letters. 01/2011;
• Source

  Available from: Pere Roca Cabarrocas

  Article: Conductive-probe atomic force microscopy characterization of silicon nanowire.

  José Alvarez, Irène Ngo, Marie-Estelle Gueunier-Farret, Jean-Paul Kleider, Linwei Yu, Pere Rocai Cabarrocas, Simon Perraud, Emmanuelle Rouvière, Caroline Celle, Céline Mouchet, Jean-Pierre Simonato
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  ABSTRACT: The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
  Nanoscale Research Letters 01/2011; 6(1):110. · 2.73 Impact Factor