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A. Albores-Mejia,
F. Gomez-Agis,
S. Zhang,
H.J.S. Dorren,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
M.J.R. Heck,
R. Notzel,
D.J. Robbins,
M.K. Smit,
K.A. Williams
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ABSTRACT: A monolithic, multi-stage, photonic circuit comprising up to four cascaded, SOA-based, crossbar switches is assessed at record 160 Gbit/s serial line rates. Power penalties of only 1.2 dB signify an important route to high-speed, high-density optoelectronic integrated circuits.
Electronics Letters 09/2010; · 0.96 Impact Factor
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P.R.A. Binetti,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
L. Di Cioccio,
J.-M. Fedeli,
C. Lagahe,
J. Van Campenhout,
D. Van Thourhout,
P.J. van Veldhoven,
R. Nötzel,
M.K. Smit
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ABSTRACT: We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 μm<sup>2</sup>, which is the smallest reported to date for this kind of device, and the junction capacitance is below 10 fF, which allows for high integration density and low dynamic power consumption. The measured detector responsivity and 3-dB bandwidth are 0.45 A/W and 33 GHz, respectively. The device fabrication is compatible with wafer-scale processing steps, guaranteeing compatibility toward future-generation electronic IC processing.
IEEE Photonics Journal 07/2010; · 2.32 Impact Factor
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European Conference on Optical Integration (ECIO); 04/2010
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ABSTRACT: A compact scalable reconfigurable multiwavelength router is proposed and demonstrated using an electronically gated cyclic router. Simultaneous wavelength-multiplexed channel allocation is performed with power penalties of 0.2-0.8 dB. Nanosecond timescale reconfiguration is achieved within a 2-ns guard band using semiconductor optical amplifier gates.
IEEE Photonics Journal 03/2010; · 2.32 Impact Factor
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P.R.A. Binetti,
X.J.M. Leijtens,
A. Morant Ripoll,
T. de Vries,
E. Smalbrugge, Y.S. Oei,
L. Di Cioccio,
J.-M. Fedeli,
C. Lagahe,
R. Orobtchouk,
D. Van Thourhout,
P.J. van Veldhoven,
R. Notzel,
M.K. Smit
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ABSTRACT: We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si<sub>3</sub>N<sub>4</sub>-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper.
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE; 11/2009
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ABSTRACT: A compact and highly scaleable reconfigurable wavelength router is proposed and demonstrated using an electronically-gated cyclic wavelength router. Power penalties for wavelength multiplexed 3 times 10 Gb/s wavelength channels of order 0.2 dB are achieved.
Photonics in Switching, 2009. PS '09. International Conference on; 10/2009
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P.R.A. Binetti,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
L. Di Cioccio,
J.-M. Fedeli,
C. Lagahe,
J. Van Campenhout,
D. Van Thourhout,
P.J. van Veldhoven,
R. Notzel,
M.K. Smit
[show abstract]
[hide abstract]
ABSTRACT: We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on; 10/2009
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A. Albores-Mejia,
K.A. Williams,
F. Gomez-Agis,
S. Zhang,
H.J.S. Dorren,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
M.J.R. Heck,
L.M. Augustin,
R. Notzel,
D.J. Robbins,
M.K. Smit
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ABSTRACT: We demonstrate very high line rate serial 160Gb/s data transmission through a semiconductor optical amplifier based multistage switching matrix. This represents both the leading edge in monolithic switching circuit complexity and the highest reported line rates through monolithically cascaded switching networks. Bit error rate studies are performed to show only modest levels of signal degradation. Power penalties of order 0.6dB and 1.2dB are observed for two stages and four stages respectively in the monolithic circuits at 160Gb/s per path.
High-Performance Interconnects, Symposium on. 08/2009;
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ABSTRACT: Scalable quantum dot based optical switches offer energy-efficient low-latency data routing. Low power penalty routing over multiple stages are feasible with with the prospect of larger scale photonic integration.
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th; 08/2009
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A. Albores-Mejia,
K.A. Williams,
F. Gomez-Agis,
S. Zhang,
H.J.S. Dorren,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
M.J.R. Heck,
L.M. Augustin,
R. Notzel,
D.J. Robbins,
M.K. Smit
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[hide abstract]
ABSTRACT: A four input, four output multi-stage optoelectronic switching circuit is implemented on an active-passive regrown InGaAsP/InP epitaxial wafer. The circuit incorporates shallow low-loss waveguides and waveguide crossings in combination with deeply-etched low-radius (0.1 mm) waveguide bends and multimode interference couplers to enable very high density circuit design. Each stage in the circuit comprises a two-input, two-output crossbar switch implemented with semiconductor optical amplifier gates. These are configured for an N-stage planar network devised with four inputs and four outputs. Data integrity is analysed with 160 Gb/s optically time multiplexed data. Power penalties are derived from bit error rate measurements to give values of 0.6 and 1.2 dB over two and four stages of crossbar switches, respectively. The feasibility of such high serial line rates within highly sophisticated optoelectronic integrated circuits is increasingly important to exploit bandwidth agnostic energy consumption in such optoelectronic switching circuits. Energy consumption from the semiconductor optical amplifier gates is estimated at only 3 pJ/bit for the fully loaded circuit operating at 160 Gb/s for each of the four input paths.
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on; 07/2009
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ABSTRACT: A compact cascaded crossbar element with low power penalty, high distortion threshold and low crosstalk penalty is presented. Dual-stage monolithic switch integration is facilitated using a quantum dot epitaxy at 1550nm wavelength.
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on; 04/2009
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ABSTRACT: A highly compact quantum dot semiconductor optical amplifier based crossbar switch is proposed, fabricated and demonstrated at a wavelength of 1550 nm. Power penalty measurements at 10 Gbit/s show minimal path dependence with values of 0.15 to 0.25 dB and an extinction ratio of 24 dB.
Electronics Letters 04/2009; · 0.96 Impact Factor
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P.R.A. Binetti,
X.J.M. Leijtens,
T. de Vries, Y.S. Oei,
O. Raz,
L. Di Cioccio,
J.-M. Fedeli,
C. Lagahe,
R. Orobtchouk,
J. Van Campenhout,
D. Van Thourhout,
P.J. van Veldhoven,
R. Notzel,
M.K. Smit
[show abstract]
[hide abstract]
ABSTRACT: We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the; 12/2008
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L. Xu,
M. van Heijningen,
G. van der Bent,
P.J. Urban,
X.J.M. Leijtens,
E. Smalbrugge,
T. de Vries,
R. Notzel, Y.S. Oei,
H. de Waardt,
M.K. Smit
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ABSTRACT: In this paper, we present a low cost and polarization independent photoreceiver which is part of the optical network unit (ONU) for the fiber access network. It consists of one InP-photodetector and a low cost SiGe amplifier. It operates error free with 2<sup>23</sup> - 1 PRBS word length at 1.25 Gbit/s with -13 dBm input optical power before the fiber chip coupling whose loss is about 5 dB. From the rise and fall time shown in measured eye diagram, it is estimated that it will also operate up to 2.5 Gbit/s.
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the; 12/2008
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ABSTRACT: The first quantum dot based crossbar switch matrix is proposed, fabricated and demonstrated at a wavelength of 1.55 mum. Power penalty measurements at 10 Gb/s show minimal path dependence with values of 0.4 to 0.6 dB.
Photonics in Switching, 2008. PS 2008. International Conference on; 09/2008
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ABSTRACT: In this paper a new method is demonstrated for the suppression of polarization dependent operation of a semiconductor optical amplifier (SOA). This scheme averages out the polarization dependency by integrating a polarization converter in between two half SOAs. The concept is investigated with simulations and the operation is experimen-tally demonstrated.
07/2008;
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ABSTRACT: Passive mode-locking in two section InAs/InP (100) quantum dot lasers emitting around 1.53 m is observed over a large operating regime. For absorber voltages of 0 V down to -3 V and for amplifier currents of 750 mA up to 1 A the fundamental RF-peak is over 40 dB above the noise floor.
07/2008;
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ABSTRACT: A quantum dot active layer is used in a novel, highly scaleable monolithic optical switch matrix architecture. Electronically paired semiconductor optical amplifiers gates are implemented in a four-input four-output configuration to reduce the electrical connections and control complexity. Low power penalty 10Gb/s routing at a wavelength of 1555nm is demonstrated. Increasingly high-capacity data transfer in storage area networking, high performance computing, and server networks is driving research into increasingly elaborate photonic switched interconnect test-beds [1-4]. The need for low-latency, high capacity, scalable switch fabrics with low driver complexity, excellent crosstalk and the broad gain bandwidth has lead to a particular focus on semiconductor optical amplifier (SOA) based switches. However, considerable integration is required to remove complex packaging-related restrictions such as the high numbers of fibre pigtails, power consuming cooler circuits, and the complex electronic control circuits. To date, integrated SOA based switch designs have focused on gate arrays in a broadcast and select architecture. The gates and inputs are connected via splitters and combiners utilising fibre [4] and waveguides with hybrid integration [5] and epitaxial regrowth [6]. The latter has lead to the smallest circuits with 20mm 2 footprints. The bulk active layer amplifier designs implemented have however lead to low saturation powers. The resulting low distortion threshold necessitates a lower number of photons per bit and thereby impairs signal to noise ratio and data capacity. The broadcast and select architecture requires a high number of waveguide crossings and exhibits a square law scaling in the required electrical control signals with the number of optical inputs. This already leads to 16 independent controls for a four input four output switch.
07/2008;
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ABSTRACT: In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.
IEEE Photonics Technology Letters 04/2008; · 2.19 Impact Factor
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ABSTRACT: The linear polarization of the optical gain of closely stacked In As / In P (100) quantum dots (QDs) grown by metal-organic vapor-phase epitaxy with emission wavelength tuned into the 1.55 μ m region is controlled by the number of stacked QD layers and the injection current. Increasing the number of stacked QD layers to five rotates the linear polarization of the cleaved-side photoluminescence and QD ground state (GS) gain, determined from the amplified spontaneous emission (ASE) of a Fabry–Pérot ridge-waveguide laser, from transverse electric (TE) to transverse magnetic due to vertical electronic coupling. When the QD GS ASE and gain saturate with an increase of the injection current and the excited state ASE and gain become dominant, the linear polarization of ASE and gain changes back to TE. This limits the polarization insensitive operation of QD-based semiconductor optical amplifiers, however, opening routes to novel functionalities.
Applied Physics Letters 04/2008; · 3.84 Impact Factor
