Jean-Sebastian Tempel,
Franziska Veit,
Marc Aßmann, Lars Erik Kreilkamp,
Arash Rahimi-Iman,
Andreas Löffler,
Sven Höfling,
Stephan Reitzenstein,
Lukas Worschech,
Alfred Forchel,
Manfred Bayer
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ABSTRACT: We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs
microcavity with zero detuning between the bare cavity mode and the bare
exciton mode. For the emission from the lower energy-momentum dispersion branch
we find a two-threshold behavior of the ground state in the input-output curve
where each transition is accompanied by characteristic changes of the in-plane
mode dispersion. In particular, we show that the thresholds are unambiguously
evidenced in the photon statistics of the emission based on the second-order
correlation function. Moreover, the distinct two-threshold behavior is
confirmed in the evolution of the emission pulse duration.
Physical Review B 01/2011; 84:075318. · 3.69 Impact Factor
