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L. Kehias,
T. Jenkins,
T. Quach,
P. Watson,
R. Welch,
R. Worley,
A.K. Oki, H.C. Yen,
A. Gutierrez-Aitken,
W. Okamura,
E. Kaneshiro
[show abstract]
[hide abstract]
ABSTRACT: InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs heterojunction bipolar transistors (HBTs) under low voltage (2 V) operation. This paper reports excellent single-tone and two-tone X-band operation, including high two-tone power-added efficiency (PAE), on linear InP double heterojunction bipolar transistors (DHBTs) operated at V/sub ce/=4 V. The InP DHBT demonstrated a 30 dB carrier to third-order intermodulation product (C/IM3) output power ratio simultaneously with 48% two-tone PAE. This is the highest known efficiency of an X-band device under linear (30 dB C/IM3) operation. This is especially significant for microwave power amplifiers for satellite communication transmitters, where lower intermodulation distortion is normally accomplished by backing off in RF drive and output power, thus sacrificing PAE performance.
IEEE Microwave and Wireless Components Letters 10/2001; · 1.72 Impact Factor
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T. Quach,
W. Okamura,
A. Gutierrez-Aitken,
T. Jenkins,
E. Kaneshiro,
L. Kehias,
D. Sawdai,
P. Watson,
R. Welch,
R. Worley, H.C. Yen
[show abstract]
[hide abstract]
ABSTRACT: We report on an ultra-efficient circuit at X-band and a
linear-efficient circuit at Ka-band using InP double heterojunction
bipolar transistors (DHBTs). The high efficiency circuit employs a
transmission line Class-E topology to achieve 61.1% PAE, 20.1-dBm output
power, and 9.8-dB gain at 10 GHz. The linear efficient circuit combines
four unit cells of 1.5 μm × 30 μm × 2 fingers that
yielded 25.2 dBm output power, 8.4-dB linear gain, and 35.2% PAE at 28
GHz. This circuit also achieved 31 to 34 dBm output IP3
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On; 02/2001
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Y.C. Chen,
R. Grundbacher,
T.P. Chin,
M. Barsky,
R. Lai,
L.W. Yang,
T. Block,
M. Wojtowicz, H.C. Yen,
A. Oki,
D.C. Streit
[show abstract]
[hide abstract]
ABSTRACT: State-of-the-art power performance was demonstrated from the
composite-channel InP HEMT by on wafer load-pull measurements at 21 GHz.
At a drain bias of 3 V, an 8-finger 500-μm device delivered 23 dBm or
400 mW/mm of output power with 66% power-added efficiency and 10.5 dB
associated gain. The linear gain was 16.9 dB. An output power of 24.5
dBm or 560 mW/mm with 60% power-added efficiency and 10 dB associated
gain was achieved at 3.5 V drain bias
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on; 02/2000
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A.K. Oki,
D.C. Streit,
R. Lai,
A. Gutierrez-Aitken,
Y.C. Chen,
R. Grundbacher,
P.C. Grossman,
T. Block,
P. Chin,
M. Barsky,
D. Sawdai,
M. Wojtowicz,
E. Kaneshiro, H.C. Yen
[show abstract]
[hide abstract]
ABSTRACT: The performance and cost advantages of gallium arsenide (GaAs)
based heterojunction bipolar transistor (HBT) and high electron mobility
transistor (HEMT) technology has enabled several high volume commercial
applications. TRW is currently delivering over 4 million MBE based GaAs
HBT and HEMT integrated circuits per month for several commercial
applications, as well as for high performance high reliability defense
avionics, ground, and space applications. Indium phosphide (InP) based
technologies have several enabling advantages over GaAs technologies for
commercial communication applications, in particular for high efficiency
mobile cellular, broadband millimeter wave point-to-point links, high
speed fiber-optics, and satellite telecommunications
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on; 02/2000
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K.W. Kobayashi,
A.K. Oki,
A. Gutierrez-Aitken,
P. Chin,
Li Yang,
E. Kaneshiro,
P.C. Grossman,
K. Sato,
T.R. Block, H.C. Yen,
D.C. Streit
[show abstract]
[hide abstract]
ABSTRACT: This work describes the first demonstration of an InP DHBT MMIC
Doherty amplifier at K-band. When combined with InP DHBTs, the Doherty
amplifier achieves a record linear PAE of 20% under a strict C/IM3
linearity ratio of 30 dBc while producing a Pout of 20.1 dBm. This
benchmarks 3 dB greater Pout and 4% higher linear PAE than achieved with
a PHEMT MMIC Doherty amplifier at Ku-band for the same C/IM3 linearity.
Compared to its own linear “class A” bias performance, the
Doherty amplifier achieves an 11 dB improvement in C/IM3 for the same
Pout and slightly greater efficiency. The superior linearity of the InP
DHBT Doherty amplifier approach is attractive for satellite and MM-wave
communication systems
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE; 02/2000
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D.L. Ingram,
Y.C. Chen,
I. Stones,
D. Yamauchi,
B. Brunner,
P. Huang,
M. Biedenbender,
J. Ellion,
R. Lai,
D.C. Streit,
K.F. Lau, H.C. Yen
[show abstract]
[hide abstract]
ABSTRACT: Presented is the development of two >2 W W-band solid-state
monolithic microwave integrated circuit (MMIC) power amplifier modules
using TRW's advanced GaAs- and InP-based HEMT MMICs. The GaAs HEMT at
version delivers a record power of 2.4 W at 8.2% power-added efficiency
with an associated gain of 12 dB at CW condition. The InP HEMT version
delivers a compatible power of 2.24 W at 9.9% PAE with much higher
associated gain of 19.5 dB. These are the highest recorded W-band power
module using solid-state MMIC technology. The measured results clearly
show that InP HEMT technology, though operating at a lower drain voltage
(2.5-3 V) than GaAs HEMT device (typically 3.5-4 V), offers a better
power-efficiency combination at much higher associated gain than its
GaAs counterpart at millimeter-wave frequency. The overall module only
weighs 10 oz. in a volume of <4 in<sup>3</sup>. This is the smallest
2.4-watt W-band highpower module to date
Microwave Symposium Digest. 2000 IEEE MTT-S International; 02/2000
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K.W. Kobayashi,
A.K. Oki,
L.W. Yang,
A. Gutierrez-Aitken,
P. Chin,
D. Sawdai,
W. Okamura,
J. Lester,
E. Kaneshiro,
P.C. Gorssman,
K. Sato,
T.R. Block, H.C. Yen,
D.C. Streit
[show abstract]
[hide abstract]
ABSTRACT: We report on the first InP DHBT K-band fully integrated power
amplifier which achieves 0.5 Watts of output power and 40% power added
efficiency (PAE). The power DHBTs obtain a BVceo >18 V and an f<sub>T
</sub> and f<sub>max</sub> of 80 GHz and 160 GHz, respectively. The MMIC
amplifier combines eight 1.5×30 μm<sup>2</sup> emitter fingers
for a total periphery of 360 μm<sup>2</sup>. At 21 GHz the MMIC power
amplifier achieves a linear gain of 9.4 dB, output power of 27 dBm with
a 40% PAE. The amplifier was operated under a Vce=5.5V and Jc=54 KA/cm
<sup>2</sup> and obtained a corresponding power density of 1.4 mW/μm
<sup>2</sup>. To our knowledge this is the highest output power obtained
for a fully monolithic-50-Ω-matched MMIC power amplifier based on
InP HBT technology
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on; 02/2000
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[show abstract]
[hide abstract]
ABSTRACT: Summary form only given. InAlAs-InGaAs HEMTs grown on InP
substrates promise excellent gain and noise performance for amplifier
applications well into the deep sub-millimeter wave region. Low noise
amplifiers (LNAs) with 6 dB noise figure at 170 GHz (Lai et al, 1998)
and 15 dB gain at 215 GHz (Weinreb et al, 1999) have been realized using
TRW's sub-0.1 μm InP HEMT MMIC technology. On the other hand, there
has been controversy over the suitability of InAlAs-InGaAs HEMTs for
high power amplifier (PA) applications due to the low impact ionization
onset field in the InGaAs channel. Our systematic approach in enhancing
InP HEMT power performance has enabled the demonstration of world-record
solid-state power amplifiers at V-and W-bands (Chen et al, 1998 and
1999). The results not only set a new milestone for InP HEMT technology,
but also changed perceptions on the suitability of InAlAs-InGaAs HEMTs
for high power applications
Device Research Conference, 2000. Conference Digest. 58th DRC; 02/2000
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W. Okamura,
L.W. Yang,
A. Gutierrez-Aitken,
E. Kaneshiro,
J. Lester,
D. Sawdai,
P.C. Grossman,
K. Kobayashi, H.C. Yen,
A. Oki,
P. Chin,
T. Block
[show abstract]
[hide abstract]
ABSTRACT: In this paper, we report a DHBT power cell with 76% PAE at 21 GHz,
and the first DHBT MMIC PA operating at 22-24 GHz. The MMIC amplifier
combines four power cells where each power cell is made up of two
1.5×30 μm<sup>2</sup> emitter fingers, yielding a total emitter
area of 360 μm<sup>2</sup>. A practical design approach is employed
to yield a single-ended, single stage power amplifier which achieved a
record high output power density per chip area of 0.36-0.38 W/mm<sup>2
</sup> at 23 GHz
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2000. 22nd Annual; 02/2000
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[show abstract]
[hide abstract]
ABSTRACT: We have investigated the survivability of our 0.1- and 0.15-μm
InP HEMT devices and MMIC amplifiers under high input RF drive levels.
Input destruction powers as high as 22 and 26 dBm were observed for the
0.1- and 0.15-μm MMIC amplifiers, respectively. These results shows
that InP HEMT is suitable for many applications even where high
survivability levels are required. Analytical analysis and harmonic
balanced nonlinear simulations suggest that device destruction be due to
large drain-gate voltage swing that exceeds the breakdown voltage under
high RF drives. The survivability of an MMIC amplifier depends on its
impedance matching and can be improved by using large devices
Microwave Symposium Digest. 2000 IEEE MTT-S International; 02/2000
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Y.C. Chen,
P. Chin,
D. Ingram,
R. Lai,
R. Grundbacher,
M. Barsky,
T. Block,
M. Wojtowicz,
L. Tran,
V. Medvedev, H.C. Yen,
D.C. Streit,
A. Brown
[show abstract]
[hide abstract]
ABSTRACT: We have developed composite-channel InP-InGaAs HEMTs for W-band
high power amplifier applications. The optimized 0.15 μm T-gate
device demonstrated state-of-the-art g<sub>m</sub>-I<sub>max</sub>
combination. It also showed a 1.5 V improvement in on-state and
off-state breakdown over the conventional InP HEMT without degrading the
RF performance. A two-stage MMIC power amplifier built on this device
delivered 25 dBm output power with 17 dB linear gain at 94 GHz as
measured on wafer. To our knowledge, this is the first demonstration of
composite-channel HEMT at 94 GHz with excellent power performance
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on; 02/1999
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L.W. Yang,
K.W. Kobayashi,
D.C. Steit,
A.K. Oki, H.C. Yen,
P.C. Grossman,
T.R. Block,
L.T. Tran,
A. Gutierrez-Aitken,
L.G. Callejo,
J. Macek,
S. Maas
[show abstract]
[hide abstract]
ABSTRACT: We report the first InP HBT MMIC power amplifier chip results at
K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which
achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher
power MMIC at 18.5 GHz achieved 25 dBm output power with 40% PAE at 1 dB
compression under class AB operation with no noticeable gain expansion.
The MMIC has low distortion with 3<sup>rd</sup> order IM suppression C/I
of -30.2 dBc and 5th order suppression C/I of -50.8 dBc at a combined
output power of 19.3 dBm. Both amplifiers were operated under low DC
power with a conservative peak current densities of <35 kA/cm<sup>2
</sup> and a Vce of <3.3 V; showing a potential reliable application
in communications
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual; 02/1999
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Y.C. Chen,
D.L. Ingram,
D. Yamauchi,
B. Brunner,
J. Kraus,
M. Barsky,
R. Grundbacher,
S.K. Cha,
R. Lai,
T. Block,
M. Wojtowicz,
T.P. Chin,
B. Allen, H.C. Yen,
D.C. Streit
[show abstract]
[hide abstract]
ABSTRACT: We present a world-record V-band single-chip InP HEMT power
amplifier module. The two-stage amplifier consists of two channels with
4.48 mm total output periphery. It was fabricated using TRW's 0.5 μm
InP HEMT MMIC production process. The two channels were combined by
off-chip Wilkinson combiners. Under CW test condition, the amplifier
delivered 1 W of output power with 21% power added efficiency and 15 dB
associated gain at 62 GHz. The linear gain was 20 dB. We have also
characterized a single channel MMIC power amplifier which delivered 515
mW output power with 25% power added efficiency at 62 GHz
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1999. 21st Annual; 02/1999
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[show abstract]
[hide abstract]
ABSTRACT: Presented is the development of a 2-stage 427 mW (26.3 dBm), 19%
PAE compact W-band InP monolithic microwave integrated circuit (MMIC)
power amplifier with an associated power gain of 8.9 dB. 20% PAE with
output power of 407 mW (26.1 dBm) was achieved when the amplifier was
biased for optimal efficiency. These MMIC amplifiers were fabricated
with a 2-mil thick substrate using 0.15-μm InGaAs/InAlAs/InP HEMT
technology. InP amplifier, though operates at lower drain voltage, but
it delivers compatible power with double the PAE of its GaAs
counter-part
Radio Frequency Integrated Circuits (RFIC) Symposium, 1999 IEEE; 02/1999
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[show abstract]
[hide abstract]
ABSTRACT: This paper describes the first InAlAs/InGaAs-InP HBT MMIC power
amplifier results reported for frequencies above 20 GHz. The MMIC
amplifier employs a unique oval emitter array (OEA) device and a 1000 nm
thick collector epitaxy in order to improve the thermal and electrical
properties of the power HBT device cell. The resulting HBTs obtain a BV
<sub>ceo</sub> breakdown voltage of 8.5 V with f<sub>T</sub>'s and
f<sub>max</sub>'s of 70 GHz and 120 GHz. The K-band MMIC amplifier
combines four 2×5 oval emitter array devices (total area=286 um
<sup>2</sup>) using a compact four-way microstrip combiner and obtains
an output power of 21.5 dBm, a power gain of 9.5 dB, and an associated
power added efficiency of 48% at 25 GHz. These results were obtained at
conservative peak current density of 23 KA/cm<sup>2</sup> and a low
supply of 3.5 V which suggests reliable HBT power operation
Electron Devices Meeting, 1999. IEDM Technical Digest. International; 02/1999
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[show abstract]
[hide abstract]
ABSTRACT: We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC
fabrication process for millimeter-wave high-power applications. A
two-stage monolithic microwave integrated circuit (MMIC) power amplifier
with 0.15-μm gate length and 1.28-mm output periphery fabricated
using this process has demonstrated an output power of 427 mW with 19%
power-added efficiency at 95 GHz. To our knowledge, this is the highest
output power ever reported at this frequency for any solid-state MMIC
amplifier
IEEE Microwave and Guided Wave Letters 12/1998;
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[show abstract]
[hide abstract]
ABSTRACT: We have developed a new empirical model to represent the
current-voltage (I-V) characteristics of HEMT devices. This model is
simple and yet capable of representing the HEMT I-V characteristics with
high accuracy. Excellent modeling of the measured drain current, its
first (transconductance), second, and third derivatives with respect to
gate voltage for multiple drain biases is demonstrated. A simple model
extraction procedure has been developed and is described in the letter
IEEE Microwave and Guided Wave Letters 11/1998;
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[show abstract]
[hide abstract]
ABSTRACT: This paper presents the development of a 94-GHz monolithic
frequency source using InP-based HEMT-HBT integration technology. This
single-chip frequency source consists of five sub-circuits: a 23.5-GHz
HBT VCO, a 23.5-GHz HBT buffer amplifier, a 23.5 to 47 GHz HEMT
frequency doubler, a 47 GHz HEMT buffer amplifier, and a 47 to 94 GHz
HEMT doubler. The source chip has a peak output power of 1.6 dBm, with
tuning range from 90.8 GHz to 94.3 GHz. This is the highest-level
integration of millimeter-wave solid-state integrated circuits using
this technology reported to date
Microwave Symposium Digest, 1998 IEEE MTT-S International; 07/1998
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K.W. Kobayashi,
H. Wang,
R. Lai,
L.T. Tran,
T.R. Block,
P.H. Liu,
J. Cowles,
Y.C. Chen,
T.-W. Huang,
A.K. Oki, H.C. Yen,
D.C. Streit
[show abstract]
[hide abstract]
ABSTRACT: This paper presents the results of the first W-band InP-based high
electron mobility transistor-heterojunction bipolar transistor
(HEMT-HBT) monolithic microwave integrated circuit (MMIC). The InP-based
HBT and HEMT devices are monolithically integrated using selective
molecular beam epitaxy (MBE). The amplifier demonstrates the highest
frequency performance MMIC so far obtained with this technology. A
single-stage HBT op amp current regulator is integrated with a
single-stage HEMT amplifier in order to regulate and self-bias the MEMT
device over process, temperature, and age variations. The HBT regulates
the HEMT bias to within 3% of the bias current while consuming only a
small fraction of the total dc power. The HEMT W-band amplifier achieves
a radio frequency (RF) gain of 8.25 and 5.9 dB at 77 and 94 GHz,
respectively. A minimum noise figure of 4.2 dB was also recorded at 93.5
GHz. The RF performance achieved from the HEMT amplifier using the
InP-based HEMT-HBT integrated technology is comparable to that of
InP-based single-technology HEMT performance
IEEE Microwave and Guided Wave Letters 09/1997;
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H. Wang,
E. Lin,
D.C.W. Lo,
R. Lai,
L. Tran,
J. Cowles,
Y.C. Chen,
T. Block,
P.H. Liu, H.C. Yen,
K. Stamper
[show abstract]
[hide abstract]
ABSTRACT: This paper presents the development of a 24-GHz monolithic
frequency source using InP-based HEMT-HBT integration technology. This
frequency source consists of a 24-GHz HBT voltage controlled oscillator
(VCO) and a HEMT buffer amplifier, and was fabricated on a single 3-mil
thick InP substrate. It exhibits a measured oscillation frequency of
24.6 GHz with an output power of 4.2 dBm. This is the first successful
demonstration of MMIC using InP-based HEMT-HBT integration technology
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE; 07/1997
