[Show abstract][Hide abstract] ABSTRACT: A monolithic 25 Gbaud DQPSK receiver based on delay interferometers and balanced detection has been designed and fabricated on the hybrid Si/InGaAs platform. The integrated 30 µm long InGaAs p-i-n photodetectors have a responsivity of 0.64 A/W at 1550 nm and a 3dB bandwidth higher than 25 GHz. The delay interferometer shows a delay time of 39.2 ps and an extinction ratio higher than 20 dB. The demodulation of a 25 Gb/s DPSK signal by a single branch of the receiver demonstrates its correct working principle.
[Show abstract][Hide abstract] ABSTRACT: A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.
[Show abstract][Hide abstract] ABSTRACT: We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.
[Show abstract][Hide abstract] ABSTRACT: We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps.