W.-P. Hong

Lehigh University, Bethlehem, Pennsylvania, United States

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Publications (69)121.82 Total impact

  • R. Bhat · W‐P. Hong · C. Caneau · MA Koza · C‐K. Nguyen · S. Goswami
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    ABSTRACT: InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the band alignment indicate that it is ideal for fabricating n‐p‐n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon‐doped bases having an f t and f max of 30 and 45 GHz, respectively. © 1996 American Institute of Physics.
    Applied Physics Letters 03/1996; 68(7-68):985 - 987. DOI:10.1063/1.116120 · 3.52 Impact Factor
  • R. Bhat · M. A. Koza · J.‐I. Song · S. A. Schwarz · C. Caneau · W.‐P. Hong
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    ABSTRACT: It is shown that the growth of emitter layers of InP/InGaAs/InP double heterojunction bipolar transistors can result in significant Zn diffusion from the base into the collector, with the extent of diffusion depending on the n‐doping level of the emitter. This behavior is explained in terms of nonequilibrium point defects induced by a combination of surface pinning of the Fermi level and n doping. It is also shown that the Zn diffusion can be substantially reduced by using AlInAs, instead of InP, as the emitter layer. The difference in behavior is shown to be at least in part due to the lower diffusivity of group III interstitials in AlInAs. Furthermore, it is shown that the introduction of only 50 nm of AlInAs between the n‐InP emitter and p<sup>+</sup>‐InGaAs base resulted in a significant reduction of Zn diffusion into the collector.
    Applied Physics Letters 08/1994; 65(3-65):338 - 340. DOI:10.1063/1.112364 · 3.52 Impact Factor
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    ABSTRACT: Successful growth of p‐type (∼1×10<sup>20</sup> holes/cm<sup>-3</sup>) C‐doped lattice matched GaInAs on InP(100) has been demonstrated using chemical beam epitaxy. Carbon tetrachloride was used as the C‐dopant gas and p‐type GaInAs was grown by chemical beam epitaxy using trimethylindium, triethylgallium and cracked arsine. Combinations of elemental and organometallic group‐III sources also resulted in p‐type layers. High performance C‐doped base InP/InGaAs heterojunction bipolar transistors were fabricated using chemical beam epitaxy grown material.
    Applied Physics Letters 07/1994; 64(23-64):3139 - 3141. DOI:10.1063/1.111344 · 3.52 Impact Factor
  • J.-I. Song · C. Caneau · W.-P. Hong · K.B. Chough
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    ABSTRACT: The characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) with a compositionally-graded base are reported. The characteristics of HBTs with three different linearly-graded Al<sub>x</sub>Ga<sub>1-x</sub>As bases (x=0→0.1, 0→0.2, 0→0.3) are compared with those of an HBT without base grading. Nearly ideal transistor characteristics were observed for x values up to 0.2, indicating possible high-speed operation of graded base GaInP/GaAs HBTs
    Electronics Letters 05/1994; DOI:10.1049/el:19940386 · 1.07 Impact Factor
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    ABSTRACT: We report the microwave characteristics of InP/InGaAs heterojunction bipolar transistors (HBTs) using a carbon-doped base grown by chemical beam epitaxy (CBE). An extrinsic delay time of 0.856 ps was achieved by nonequilibrium transport in a very thin base layer and extremely small emitter parasitic resistance through the use of silicon δ-doping in the emitter ohmic contact layer. To our knowledge, this is the shortest extrinsic delay time of any bipolar transistors reported. This result indicates the great potential of InP/InGaAs HBTs for applications requiring a very large bandwidth
    Electronics Letters 04/1994; 30(5-30):456 - 457. DOI:10.1049/el:19940293 · 1.07 Impact Factor
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    ABSTRACT: We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors with two 2/spl times/5 /spl mu/m/sup 2/ emitter fingers were fabricated and exhibited f/sub T/ and f/sub max/ of 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/GaAs DHBT's for high-power microwave applications.< >
    IEEE Electron Device Letters 02/1994; DOI:10.1109/55.289478 · 3.02 Impact Factor
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    ABSTRACT: First Page of the Article
    Device Research Conference, 1994. 52nd Annual; 02/1994
  • K.B. Chough · C. Caneau · W.-P. Hong · J.-I. Song
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    ABSTRACT: A new Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As pseudomorphic HEMT where the InAs mole fraction of the Ga/sub 1/spl minus/x/In/sub x/As channel was graded (x=0.53/spl rarr/0.65/spl rarr/0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al/sub 0.25/In/sub 0.75/P Schottky layer increased the Schottky barrier height. Devices having 0.5 /spl mu/m gate-length showed g/sub m/ of 520 mS/mm and I/sub max/ of 700 mA/mm. The gate-drain (BV/sub g/spl minus/d/) and source-drain (BV/sub d/spl minus/s/) breakdown voltages were as high as /spl minus/14 and 13 V, respectively. An f/sub T/ of 70 GHz and f/sub max/ of 90 GHz were obtained.< >
    IEEE Electron Device Letters 02/1994; DOI:10.1109/55.289470 · 3.02 Impact Factor
  • K. B. Chough · C. Caneau · W.‐P. Hong · J.‐I. Song
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    ABSTRACT: The use of high band gap strained Al x Ga y In 1-x-y P as a Schottky layer of AlInAs/GaInAs high electron mobility transistors on InP has been investigated. A Schottky layer with a small AlP mole fraction (Al 0.1 Ga 0.1 In 0.8 P or Al 0.2 In 0.8 P) significantly increases the Schottky barrier height, leading to significant reduction of gate leakage currents. Devices with an Al 0.2 In 0.8 P Schottky layer yield gate breakdown voltages as high as -15.5 V in addition to improving drain breakdown voltages (∼8 V). With devices having a gate length of 0.5 μm, we have achieved a maximum transconductance (g m ) of 480 mS/mm, current gain cutoff frequency (f T ) of 68 GHz, and power gain cutoff frequency (f max ) of 130 GHz.
    Applied Physics Letters 02/1994; 64(2-64):211 - 213. DOI:10.1063/1.111507 · 3.52 Impact Factor
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    ABSTRACT: We report the microwave characteristics of an InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction bipolar transistor (HBT) utilizing a highly carbon-doped base grown by chemical beam epitaxy (CBE). The HBT having two 1.5×10 μm<sup>2</sup> emitter fingers exhibited f<sub>T</sub> and f<sub>max(MAG)</sub> of 175 GHz and 70 GHz, respectively, at I<sub>C</sub>=40 mA and V<sub>CE</sub>=1.5 V. To our knowledge, the f<sub>T</sub> of this device is the highest of any type of bipolar transistors yet reported. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed applications
    Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International; 01/1994
  • K.B. Chough · W.-P. Hong · C. Caneau · J.-I. Song · J.R. Hayes
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    ABSTRACT: A novel AlInAs/GaInAs HEMT (high electron mobility transistor) with an AlGaInP Schottky layer is reported. In addition to excellent AC performance, the gate leakage and breakdown characteristics have been significantly improved. The AlInAs/GaInAs HEMT structures were grown by low-pressure OMCVD (organometallic chemical vapor deposition). The results obtained indicate that AlGaInP is an excellent candidate as a Schottky layer for InP-base HEMTs
    IEEE Transactions on Electron Devices 12/1993; 40(11-40):2111. DOI:10.1109/16.239780 · 2.36 Impact Factor
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    ABSTRACT: The first high-speed operation of an InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction bipolar transistor (HBT) using a highly carbon-doped base is reported. A base carrier concentration of 7*10<sup>19</sup>/cm<sup>3</sup> was achieved by chemical beam epitaxy (CBE). To the authors' knowledge, this is the highest doping level reported using carbon. The f<sub>T</sub> and f<sub>max</sub> of the HBT with two 1.5*15 mu m<sup>2</sup> emitter fingers were 115 GHz and 51 GHz respectively, at I<sub>C</sub>=60 mA and V<sub>CE</sub>=2.0 V. These results indicate the significant potential of highly carbon-doped-base InP/InGaAs HBTs for high-speed applications.
    Electronics Letters 11/1993; 29(21-29):1893 - 1894. DOI:10.1049/el:19931260 · 1.07 Impact Factor
  • J.-I. Song · C. Caneau · W.-P. Hong · K.B. Chough
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    ABSTRACT: The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heterojunction bipolar transistor with the same collector doping and thickness.
    Electronics Letters 11/1993; 29(21-29):1881 - 1883. DOI:10.1049/el:19931252 · 1.07 Impact Factor
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    ABSTRACT: The barrier effects in InP based double heterojunction bipolar transistors have been investigated both theoretically and experimentally. It was found that the gradual saturation of collector current with increasing collector voltage was caused by the collector-base heterojunction barrier. The gain compression with increasing base current was caused by electron accumulation at the collector-base heterojunction. These effects have been included in terms of nonlinear currents and capacitances in an equivalent circuit model for the prediction of DHBT large signal performance. By using an InAlAs emitter and an InP collector with an InGaAs spacer to alleviate these undesirable effects, improvement in microwave power performance was verified
    High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in; 09/1993
  • K.B. Chough · W.-P. Hong · P.S.D. Lin · C. Caneau · J.I. Song
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    ABSTRACT: The performance of 0.15 mu m gate InAlAs/InGaAs HEMTs grown by MOCVD is reported. The HEMT layer structure exhibited excellent transport properties, indicating the high quality of the heterointerface. The devices fabricated using a T-gate process showed an f<sub>T</sub> of 200 GHz and f<sub>max</sub> of 230 GHz extrapolated from 26 GHz at -6dB/octave. These are the best speed performances of any MOCVD-grown FETs. The results clearly demonstrate that MOCVD is a powerful growth technique for materials for high-speed applications.
    Electronics Letters 08/1993; 29(15-29):1361 - 1363. DOI:10.1049/el:19930912 · 1.07 Impact Factor
  • K.B. Chough · W.-P. Hong · L. Florez · J.I. Song
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    ABSTRACT: The RF noise characteristics of lattice-matched and strained In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As HEMTs grown by MBE have been investigated. The indium composition of the In<sub>x</sub>Ga<sub>1-x</sub>As channel was varied from x=0.53 to 0.80. While the gain and speed performance were significantly improved with the increase of indium composition as expected, the noise characteristics showed that the microwave noise increases with the increase of the indium composition.
    Electronics Letters 08/1993; 29(15-29):1338 - 1340. DOI:10.1049/el:19930897 · 1.07 Impact Factor
  • W.-P. Hong · G.-K. Chang · R. Bhat · J.R. Hayes
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    ABSTRACT: The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 μm laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10<sup>-9</sup>. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
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    ABSTRACT: The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.
    Electronics Letters 05/1993; DOI:10.1049/el:19930484 · 1.07 Impact Factor
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    ABSTRACT: InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7*10<sup>19</sup>/cm<sup>3</sup>. To the authors' knowledge, this is the highest doping level reported using carbon. HBTs with a 20 AA spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV<sub>CEO</sub> were 7 and 6 V, respectively.
    Electronics Letters 05/1993; 29(8-29):666 - 667. DOI:10.1049/el:19930446 · 1.07 Impact Factor
  • K. B. Chough · W.-P. Hong · L. Florez · J. I. Song
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    ABSTRACT: The RF noise characteristics of lattice-matched and strained In(0.52)Al(0.48)As/In(x)Ga(1-x)As HEMTs grown by MBE have been investigated. The indium composition of the In(x)Ga(1-x)As channel was varied from x = 0.53 to 0.80. While the gain and speed performance were significantly improved with the increase of indium composition as expected, the noise characteristics showed that the microwave noise increases with the increase of the indium composition.

Publication Stats

1k Citations
121.82 Total Impact Points

Institutions

  • 1993
    • Lehigh University
      Bethlehem, Pennsylvania, United States
  • 1986–1989
    • University of Michigan
      • Department of Electrical Engineering and Computer Science (EECS)
      Ann Arbor, Michigan, United States
  • 1988
    • Concordia University–Ann Arbor
      Ann Arbor, Michigan, United States