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Publications (15)0.21 Total impact

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    ABSTRACT: A power amplifying X-band MMIC is reported, that delivers 5W saturated power over a 27% bandwidth. It was developed for operation at constant input power and with a restricted gain compression throughout its frequency range. Under these conditions, gain flatness becomes relevant for the power performance. A linear design procedure was developed for the interstage circuit, aimed towards maximum efficiency and flatness. Test results for a single-ended module built around this MMIC indicate, for a gain compression not exceeding 3 dB, an output power between 4.4 and 5.2W, with a small signal gain of 19 ± 1 dB and with 32 - 36 % power-added efficiency.
    Microwave Conference, 1994. 24th European; 10/1994
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    ABSTRACT: A high-efficiency 3.5-W power module intended for commercial application in the digital cellular telephone market is described. The demonstration circuit is designed to be coupled with a functional gain control circuit or can be a stand-alone power stage. The GaAs FET module operates at 6.2 V, and produces 35.5 dBm of output power, 12.5 dB of gain, and 53% power added efficiency in the 890-920-MHz frequency range
    Microwave Symposium Digest, 1992., IEEE MTT-S International; 07/1992
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    ABSTRACT: The authors present a two-stage power amplifying monolithic microwave integrated circuit (MMIC) capable of delivering 3 W at X -band with high efficiency. They describe the utilization of the MMIC designed in applications differing both in frequency range and in bias conditions. This MMIC was designed for operation with external matching circuits on separate ceramic substrates. By customizing these circuits, the same MMIC can cover an entire array of different applications. The versatility of this approach was demonstrated by the implementation of this MMIC in four power modules specified for different bandwidths, power levels, and bias voltages. The small chip size and the tunability allowed by the external circuits resulted in increased manufacturing yields and made possible significant cost reductions
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992. Digest of Papers, IEEE 1992; 07/1992
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    ABSTRACT: A two-stage C -band monolithic power amplifier is reported. The MMIC (monolithic microwave integrated circuit) incorporates full interstage matching network and partial input matching network on the chip. The amplifier delivers +35.2 dBm of power at 2 dB gain compression, 19 dB of gain, and more than 35% power added efficiency (PAE) between 5 and 6 GHz, with a CW signal applied
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual; 11/1991
  • Conference Paper: Eight watt Ku-band module
    M. Gat, D.S. Day, J.R. Basset
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    ABSTRACT: A Ku -band molecular beam epitaxy (MBE) monolithic power amplifier is reported. In the design, two pairs of monolithic microwave integrated circuits (MMICs) combined in parallel are balanced between Lange couplers and given by a fifth identical MMIC. Each MMIC is a two-stage power amplifier which incorporates a full interstage matching network and a partial input matching network. Individually, the MMICs deliver more than 3 W of power, 11 dB gain, and more than 20% power-added efficiency (PAE) from 15 to 18 GHz. The full power module has 8 W of P<sub>out</sub>, 20 dB gain, and 14% PAE at 18 GHz. The module could be tuned for a 1-GHz instantaneous bandwidth anywhere in the 15-18 GHz band
    Microwave Symposium Digest, 1991., IEEE MTT-S International; 08/1991
  • M. Gat, D.S. Day, J.R. Basset
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    ABSTRACT: A two-stage Ku -band monolithic power amplifier is reported. The MMIC (monolithic microwave integrated circuit) incorporates a full interstage matching network and a partial input matching network on the chip. The amplifier delivers 4 W of power, 10 to 13 dB of gain, and more than 20% power added efficiency at 2 dB gain compression. This amplifier can be tuned for a 1 GHz instantaneous bandwidth anywhere in the 15-18 GHz band. A 10-W, 20-dB gain power module using five MMICs demonstrates the usefulness of the MMIC as a building block for higher-power amplifiers
    Microwave Symposium Digest, 1991., IEEE MTT-S International; 08/1991
  • M. Gat, D.S. Day, J.R. Basset
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    ABSTRACT: A two-stage Ku -band monolithic power amplifier is reported. The MMIC (monolithic microwave integrated circuit) incorporates a full interstage matching network and a partial input matching network on the chip. The amplifier delivers 4 W of power, 10 to 13 dB of gain, and more than 20% power added efficiency at 2 dB gain compression. This amplifier can be tuned for a 1 GHz instantaneous bandwidth anywhere in the 15-18 GHz band. A 10-W, 20-dB gain power module using five MMICs demonstrates the usefulness of the MMIC as a building block for higher-power amplifiers
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991; 07/1991
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    ABSTRACT: Three Ku-band MBE monolithic power modules have been developed. The modules consist of one, two and five MMICs. A newly developed MMIC which is used in the modules is a two stage power amplifier which contains full interstage matching network and partial input matching network. The single MMIC module delivers more than 3 watts of power, 11 dB of gain and more than 20 % power added efficiency (PAE) from 15 to 18 GHz. A pair of the MMICs are balanced to form a module which is called a `dual'. Two duals are balanced between Lange couplers and driven by a single MMIC module to form a 5 MMIC module. The full power module has 8 to 10 watts of Pout, 20 dB of gain and 14 % PAE at 18 GHz. The modules could be tuned for 1 GHz instantaneous bandwidth anywhere in the 15-18 GHz band.
    01/1991;
  • D. Raicu, D. S. Day, J. R. Basset
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    ABSTRACT: Design and performance of a 30 dBm high-efficiency MMIC amplifier module for 6-18 GHz are presented. It consists of a single MMIC, comprising two FETs, their interstage circuit and elements for input pre-matching, which is embedded between off-chip input and output hybrid matching circuits. Thus, tuning capabilities are maintained, while the chip size is minimized.
    01/1991;
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    ABSTRACT: A two-stage MBE (molecular beam epitaxy) monolithic power amplifier is reported with excellent performance in power and power-added-efficiency (PAE) over the entire frequency band of 7-11 GHz. The monolithic chip contains full interstage matching and partial input matching. When matched to 50 ohms at both input and output using simple off-chip circuitry, the MMIC demonstrates best overall performance of 32 dBm (0.44 W/mm), 33%, and 13.7 dB of power, PAE, and associated gain at a gain compression of 2 dB. These values are the minimum across the entire 40% bandwidth. The average performance from 11 devices from 3 wafers is a power of 31 dBm, PAE of 30%, and 2-dB compressed gain of at least 10.5 dB across the band. Conservative design coupled with a partial monolithic implementation resulted in a relatively small die size of 0.083"×0.046"
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual; 11/1990
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    ABSTRACT: MMIC and hybrid circuit technologies have been incorporated into transmit/receive module amplifier stages in order to achieve high efficiency and reasonable output power along with small size and low cost requirements. Three high-efficiency, miniature, GaAs power stages are designed with this approach: (1) a 2.5-W X-band MMIC with 32-percent power-added efficiency, (2) a 1.5-W X-band MMIC with 33-percent power-added efficiency, and (3) a 0.25-W 6-to-18-GHz MMIC with 12-percent power-added efficiency. All three MMICs employ full interstage matching and partial input matching, but no output matching. Output matching and tuning are supplied by off-chip circuitry for ease of control. Detailed design descriptions are presented for each of the three amplifier power stages mentioned above.
    Microwaves and Rf 01/1990; 29:119-124. · 0.04 Impact Factor
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    ABSTRACT: The design and performance of a two-stage molecular-beam-epitaxial (MBE) monolithic power amplifier chip are presented. The MMIC (monolithic microwave integrated circuit) contains full interstage matching, partial matching at the input, and no match at the output. When matched to 50 Ω at input and output using off-chip circuitry, the MMIC demonstrated best overall performance of 32.1 dBm (0.450 W/mm), 33.4%, and 13.2 dB of power, power-added-efficiency (PAE), and associated gain, respectively, across the 8.3-10.7-GHz band. The PAE was as high as 36% in parts of the band. The average performance for 23 devices from 8 wafers from 3 different runs, across the 8.5-10.5-GHz band, was 31.6 dBm (0.430 W/mm), 30%, and 13.1 dB. The chip size is 0.074 in.×0.043 in.×0.003 in. (1.88 mm×1.09 mm)
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual; 11/1989
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    ABSTRACT: The design and performance of a two-stage molecular-beam epitaxy (MBE) monolithic power amplifier chip is presented. The monolithic chip contains full interstage matching, partial matching at the input, and no match at the output. When matched to 50 Ω at input and output using off-chip circuitry, the MMIC demonstrates an overall performance of 34 dBm (0.436 W/mm) of power, 36% of power-added efficiency (PAE), and 14.5 dB of associated gain across the band 9.0-10.0 GHz. The PAE was as high as 38% in parts of the band. The average performance of 26 devices from at least 12 wafers from 5 different runs is 33.6 dBm (0.4 W/mm), 32%, and 14 dB, respectively. The chip size is 0.081 in×0.070 in×0.003 in (2.06 mm×1.78 mm<sup>2</sup>)
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989; 07/1989
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    ABSTRACT: The design of two power FETs is discussed for operation in the C and X bands. One is a 2.5 W, 5 mm gate-periphery device with a die size of 0.018 x 0.038 x 0.0028 in., and the other is a 5 W, 10 mm device fabricated on a 0.018 x 0.075 x 0.0028 in. die. The description and state-of-the-art performance of two internally matched GaAs FET 'drop-in' amplifier stages using the devices are also discussed. The amplifier stages consist of an 18 W output stage for the 5.9 to 6.4 GHz satellite uplink/radio band using four of the 10 mm devices, and a 10 W output stage for the 9 to 10 GHz radar band using four of the 5 mm devices.
    Microwave Journal 01/1989; 32. · 0.17 Impact Factor
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    ABSTRACT: A high-efficiency, 7.2 mm GaAs power FET is described that uses a novel doping profile grown by molecular-beam epitaxy. This FET has achieved greater than 7-dB gain and 35.3-dBm power operating in class AB mode with a power-added-efficiency (PAE) of 40% at 10.2 GHz. Extremely compact single- and two-stage balanced amplifier modules were developed achieving power, gain, and PAEs of 37.7 dBm, 6.7 dB, and 34.8% for the single stage and 37.7 dBm, 15.1 dB, and 33.1% for the double stage at 1- and 2-dB gain compression points, respectively, across the 9.2-10.2-GHz band with good gain flatness and output return loss. The total two-stage amplifier was realized on a carrier measuring only 0.700 in. by 0.280 in. by using high-dielectric-constant substrates for all the matching circuits. The values for the PAE remained relatively constant with flange temperatures up to 75°C
    Microwave Symposium Digest, 1988., IEEE MTT-S International; 06/1988