G. Valceanu

Publications (4)0 Total impact

• Source

  Available from: J. Ninkovic

  Conference Proceeding: Back Illuminated Drift Silicon Photomultiplier as Novel Detector for Single Photon Counting

  C. Merck, R. Eckhardt, R. Hartmann, P. Holl, C. Koitsch, R. Mirzoyan, H.-G. Moser, J. Ninkovic, R.H. Richter, G. Schaller, F. Schopper, H. Soltau, L. Struder, Teshima M, G. Valceanu
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  ABSTRACT: Single photon counting plays an essential role for a wide variety of applications, ranging from biomedical research to astronomy. In gamma-ray astronomy, the Cherenkov telescope MAGIC is used to detect Cherenkov photons generated in atmospheric air showers. Since the flux of Cherenkov photons from air showers is low, the development of new single photon detectors with high quantum efficiency is necessary. The concept of the Back Illuminated Drift Silicon Photomultiplier (BID SiPM) is a novel detector design for single photon counting. It combines the principles of a silicon photomultiplier (SiPM) and a drift diode. The back illuminated drift silicon photomultiplier is operated as back illuminated detector thus providing a fill factor of 100%. A high quantum efficiency of about 80% in a wavelength region of 300 - 1000 nm can be achieved. The drift region is used to focus electrons from the back through the depleted bulk to the small point-like avalanche region. The time jitter of the electrons limits the time resolution of the detector to about 1 ns as simulation results show. A prototype of an avalanche region which can be combined with a drift structure was produced at the MPI Semiconductor Laboratory as proof of principle. The detector concept and results of measurements of dark rate and leakage current are presented.
  Nuclear Science Symposium Conference Record, 2006. IEEE; 12/2006
• Source

  Available from: mpg.de

  Conference Proceeding: A New High-Speed, Single Photon Imaging CCD for the Optical

  P. Holl, R. Andritschke, R. Eckhardt, R. Hartmann, C. Koitsch, G. Lutz, N. Meidinger, R.H. Richter, G. Schaller, H. Soltau, L. Struder, G. Valceanu
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  ABSTRACT: We report on first measurements from test structures verifying a new design concept of a single photon imaging CCD for the optical. The results confirm the sensitivity of a novel avalanche diode to single electrons. Details of this structure which can be combined with a back illuminated sensor are described, measurement results include I-V curves, dark rate and temperature dependency. In addition an avalanche diode with MOSFET readout will be presented as well as an ultra low noise pnCCD which is process compatible. The successful testing of these components proves the feasibility to produce a back-illuminated single photon sensitive CCD with high frame rates and high sensitivity in a wide wavelength range.
  Nuclear Science Symposium Conference Record, 2006. IEEE; 12/2006
• Article: The avalanche drift diode - a black illumination drift silicon photomultiplier

  J. Ninkovic, R. Eckhardt, R. Hartmann, P. Holl, C. Koitsch, G Lutz, C. Merck, R. Mirzoyan, H G Moser, N. Otte, R Richter, G. Schaller, F. Schopper, H. Soltau, M. Teshima, G. Valceanu
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  ABSTRACT: Development of high quantum efficiency photon detectors is needed for many low light level (LLL) applications. Recently a new type of photodetector was introduced, the so-called Silicon PhotoMultiplier (SiPM). Its good characteristics (fast response, high gain and single photon resolution capability) make SiPM suitable for many applications. Yet its quantum efficiency is still not satisfactory (ca. 40%) for LLL applications. A new detector concept is presented that promises very high ð480%Þ quantum efficiency in a wide wavelength range (300–1000 nm). Combining the drift diode with an avalanche structure placed on the opposite side of the large-area radiation entrance window on the fully depleted bulk, one obtains a large-area device that focuses the photoelectron onto a small ‘‘pointlike’’ avalanche region. Engineering of the shallow radiation entrance window provides high quantum efficiency in the desired wavelength range. Such a device can be used as a building block for a ‘‘silicon photomultiplier’’. Extensive simulations have demonstrated the validity of this concept. A production of test devices for the optimization and characterization of avalanche regions and technology parameters has been carried out. The first results from this ‘‘proof of principle’’ production are presented.
  Nuclear Instruments and Methods in Physics Research Section A, 1013-1015 (2007).
• Source

  Available from: mpg.de

  Article: A new high-speed, single photon imaging CCD for the optical

  P. Holl, R. Andrischke, R. Eckhardt, R. Hartmann, C. Koitsch, G Lutz, N. Meidinger, R H Richter, G. Shaller, H. Soltau, L. Strüder, G. Valceanu
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  ABSTRACT: We report on first measurements from test structures verifying a new design concept of a single photon imaging CCD for the optical. The results confirm the sensitivity of a novel avalanche diode to single electrons. Details of this structure which can be combined with a back illuminated sensor are described, measurement results include I-V curves, dark rate and temperature dependency. In addition an avalanche diode with MOSFET readout will be presented as well as an ultra low noise pnCCD which is process compatible. The successful testing of these components proves the feasibility to produce a back-illuminated single photon sensitive CCD with high frame rates and high sensitivity in a wide wavelength range.
  IEEE Nuclear Science Symposium Conference Record, 3, 1589-1594 (2006).