C. Maritan

Publications (9)9.53 Total impact

• Article: Long-wavelength ridge-wave-guide lasers with processed facets and integrated back-facet monitors

  J. P. D. Cook, S. Dzioba, K. Fox, C. Maritan, J. Marks, S. McGarry, F. R. Shepherd, M. Svilans, R. Rousina
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  ABSTRACT: InP–InGaAs cleaved-cavity lasers are routinely used in long-wavelength optical transmission systems, packaged with a discrete pin photodiode back-facet monitor used to provide feedback to control the laser output power. This conventionally requires two separate wafer-fabrication processes, and individual testing, cleaving, and assembly at the chip level. The handling of cleaved bars, facet-coating, testing, and mounting is labour-intensive and expensive. Etching mirror facets during wafer processing makes it possible in a single fabrication process to fabricate lasers with an integrated back facet monitor, and do on-wafer testing without further alignment and assembly. This has now been achieved with the following technologiesf (i) laser epitaxial layers used for light detection as well as emission, (ii) reactive-ion-etched (RIE) (CH4–Ar)-etched mirror facets, and (iii) electrical interconnects by metal airbridges. Integrated laser and (or) monitors with RIE-processed facets have threshold currents as low as 30 mA, efficiencies of 0.14 mW mA−1, and monitor efficiencies of 0.1 mA mW−1. Excellent uniformity was observed across a 2 in (1 in = 2.54 cm) wafer. The lower threshold currents (27 mA) observed for cleaved facet lasers from the same wafer indicate that the processed facet quality can be further improved; the optimum RIE process results in etched facets with a facet angle about 5° off vertical. Packaged devices have been successfully operated at speeds up to 1 Gb s−1 for both laser and monitor. Preliminary reliability studies are described.
  Canadian Journal of Physics 02/2011; 70:914-920. · 0.86 Impact Factor
• Article: Performance of 1.3 μm ridge waveguide distributed feedback lasers fabricated by one-step metalorganic chemical vapour deposition

  H. Lu, C. Blaauw, C. Maritan, K.D. Chik
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  ABSTRACT: Ridge waveguide distributed feedback (DFB) lasers emitting at 1.3 μm wavelength have been fabricated by one-step metal-organic chemical deposition over a first order grating in an InP substrate. Threshold currents as low as 13-18 mA were obtained for devices with as-cleaved facets and 15-20 mA for devices with one AR-coated facet. A slope efficiency as high as 0.32 mW/mA, single mode performance up to 20 mW, and a side mode suppression ratio of 45 dB have been achieved. For lasers with a coupling×length product, κL, of 2.5-3.5 and the single longitudinal-mode detuned 10-20 nm to the shorter wavelength side of the material gain peak, a high resonance frequency and a small wavelength chirp have been observed. Small signal frequency responses were measured with a -3 dB bandwidth of 11 GHz at 12 mW output power. The devices showed good open eye patterns under direct modulation up to 10 Gbit/s
  IEE Proceedings - Optoelectronics 11/1994; · 0.71 Impact Factor
• Article: Fused silica masks for printing uniform and phase adjusted gratings for distributed feedback lasers

  G. Pakulski, R. Moore, C. Maritan, F. Shepherd, M. Fallahi, I. Templeton, G. Champion
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  ABSTRACT: A method for producing durable fused silica self‐interference grating photomasks is described. These masks allow repeated printing of both uniform and phase adjusted gratings. Periods as fine as 200 nm have been demonstrated. The fabrication of these masks via holographic and focused ion beam lithography and their use as a lithography tool are explained. Distributed feedback lasers, with gratings made by this technique, were produced. These lasers operated in a single longitudinal mode at a wavelength of either 1.55 or 1.3 μm.
  Applied Physics Letters 02/1993; · 3.84 Impact Factor
• Article: Electrically pumped circular-grating distributed-Bragg-reflector lasers

  C.M. Wu, M. Svilans, M. Fallahi, I. Templeton, T. Makino, J. Glinski, R. Maciejko, S.I. Najafi, C. Blaauw, C. Maritan, D.G. Knight
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  ABSTRACT: The design, fabrication, and lasing characteristics of electrically pumped circular-grating distributed-Bragg-reflector (CG-DBR) surface-emitting lasers, were studied. Surface-emitted lasing action was achieved at room temperature under pulsed condition. Although the measured threshold current is still higher than theoretical calculations, CW operation should be possible by improving the fabrication and the device structure.< >
  IEEE Photonics Technology Letters 10/1992; · 2.19 Impact Factor
• Article: Room temperature operation of electrically pumped surface-emitting circular grating DBR laser

  C. Wu, M. Svilans, M. Fallahi, I. Templeton, T. Makino, J. Glinski, R. Maciejko, S.I. Najafi, C. Maritan, C. Blaauw, G. Knight
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  ABSTRACT: The first 1.3 mu m electrically-pumped surface-emitting circular grating DBR laser operating at room temperature in a GaInAsP/InP heterostructure is reported. The threshold current was 170 mA. The surface-emitted output power was 10 mW.
  Electronics Letters 06/1992; · 0.96 Impact Factor
• Conference Proceeding: Room temperature operation of circular grating surface-emitting laser

  Chunmeng Wu, M. Svilans, T. Makino, J. Glinski, C. Blaauw, C. Maritan, G. Knight, M. Fallahi, I. Templeton, R. Maciejko, I. Najafi
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  ABSTRACT: Not Available
  Semiconductor Laser Conference , 1992. Conference Digest. 13th IEEE International; 02/1992
• Article: Optically pumped surface-emitting DFB GaInAsP/InP lasers with circular grating

  C. Wu, M. Svilans, M. Fallahi, T. Makino, J. Glinski, C. Maritan, C. Blaauw
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  ABSTRACT: The lasing action in surface-emitting DFB lasers with circular grating (SE-CG DFB) is reported for the first time. 1.283 mu m laser oscillation is demonstrated by optical pumping. The threshold pumping power density is estimated to be 16.2 kW/cm². The pulsed output power is more than 25 mW.
  Electronics Letters 10/1991; · 0.96 Impact Factor
• Conference Proceeding: Monolithic integrated optoelectronic transmitter on GaAs with fully RIE GRINSCH laser diode

  M. Svilans, T. Lester, K. Fox, P. Mandeville, C. Maritan, H. Postolek, A.J. SpringThorpe
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  ABSTRACT: A fully functioning optoelectronic integrated circuit, a transmitter comprising an AlGaAs GRINSCH (graded-index separate confinement heterostructure) laser diode (LD), a back facet monitor diode, and a driving circuit made up of four MESFETs, has been successfully fabricated. The flexibility that can be attained with facets completely fabricated by reactive ion etching (RIE) is demonstrated on mutually perpendicular stripe lasers side-by-side on the same wafer. The circuits were made on semi-insulating GaAs wafers using two separate MBE (molecular-beam epitaxy) growth runs for the MESFETs and the laser diodes, respectively. More than 50% of the integrated circuits on the 3" wafer were fully functional, although some variation of the FET threshold voltage, transconductance, and the gain-guided LD threshold current was observed. Typical values were -1.5 V, 98 mS/mm, and 100 mA, respectively. Measured speeds of operation exceeded 1 Gb/s
  Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE; 12/1988
• Conference Proceeding: Fabrication Of Circular Gratings On Lnp By E-beam Lithography And Reactive Ion Etching

  M. Fallahi, C Wu, C. Maritan, K. Fox, C. Blaauw
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  ABSTRACT: Not Available
  Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on;