Bin Yu

Publications (4)14.42 Total impact

• Article: Two-dimensional CdS nanosheet-based TFT and LED nanodevices.

  Yu Ye, Bin Yu, Zhiwei Gao, Hu Meng, Hui Zhang, Lun Dai, Guogang Qin
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  ABSTRACT: Semiconductor nanosheets have several unique applications in electronic and optoelectronic nanodevices. We have successfully synthesized single-crystalline n-type CdS nanosheets via a chemical vapor deposition (CVD) method in a Cd-enriched ambient. The as-synthesized nanosheets are typically 40-100 nm thick, 10-300 µm wide, and up to several millimeters long. Using the nanosheets, we fabricated for the first time (to our knowledge), nano thin-film transistors (nano-TFTs) based on individual CdS nanosheets. A typical unit of such nanosheet TFTs has a high on-off ratio (∼1.7 ×10(9)) and peak transconductance (∼14.1µS), which to our knowledge are the best values reported so far for semiconductor nano-TFTs. In addition, we fabricated n-CdS nanosheet/p(+)-Si heterojunction light emitting diodes (LEDs) with a top electrode structure. This structure, where the n-type electrode is directly above the junction, has the advantage of a large active region and injection current favorable for high-efficiency electroluminescence (EL) and lasing. Room-temperature spectra of the LEDs consist of only an intense CdS band-edge emission peak (∼507.7 nm) with a full width at half-maximum of about 14 nm.
  Nanotechnology 04/2012; 23(19):194004. · 3.98 Impact Factor
• Article: Impurity-dependent photoresponse properties in single CdSe nanobelt photodetectors.

  Peicai Wu, Yu Dai, Tuo Sun, Yu Ye, Hu Meng, Xiaolong Fang, Bin Yu, Lun Dai
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  ABSTRACT: Impurity-dependent photoresponse properties of semiconductor nanostructures are studied for the first time in the photodetectors (PDs) made from intrinsic (i-) and extrinsic n-type single CdSe nanobelts (NBs). Both ohmic and Schottky contact based CdSe NB PDs were studied. The sizes of i- and n- NBs were purposely chosen to be nearly identical to minimize the size-dependent effect. Our experimental results demonstrate that i-CdSe NBs are more suitable for fast and sensitive PD applications, while n-CdSe NBs are more advantageous for high-gain PD applications. The different photoresponse properties result mainly from the impurity induced traps inside the CdSe NBs. This conclusion can be applicable to other semiconductor nanomaterials. Moreover, we have achieved short response/recovery times (∼15/31 μs) and a high photosensitivity (∼100) simultaneously from the i-CdSe NB PDs under a 3500 Hz pulsed illumination. This may be the best reported result so far in the effort of getting fast speed and high photosensitivity simultaneously from nanostructure based PDs for practical applications.
  ACS Applied Materials & Interfaces 06/2011; 3(6):1859-64. · 4.53 Impact Factor
• Source

  Available from: Zujin Shi

  Article: Multicolor Graphene Nanoribbon/Semiconductor Nanowire Heterojunction Light-Emitting Diodes

  Yu Ye, Lin Gan, Lun Dai, Hu Meng, Feng Wei, Yu Dai, Zujin Shi, Bin Yu, Xuefeng Guo, Guogang Qin
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  ABSTRACT: We report novel graphene nanoribbon (GNR)/semiconductor nanowire (SNW) heterojunction light-emitting diodes (LEDs) for the first time. The GNR and SNW have a face-to-face contact structure, which has the merit of bigger active region. ZnO, CdS, and CdSe NWs were employed in our case. At forward biases, the GNR/SNW heterjunction LEDs could emit light with wavelengths varying from ultraviolet (380 nm) to green (513 nm) to red (705 nm), which were determined by the band-gaps of the involved SNWs. The mechanism of light emitting for the GNR/SNW heterojunction LED was discussed. Our approach can easily be extended to other semiconductor nano-materials. Moreover, our achievement opens the door to next-generation display technologies, including portable, "see-through", and conformable products.
  03/2011;
• Article: A simple and scalable graphene patterning method and its application in CdSe nanobelt/graphene Schottky junction solar cells.

  Yu Ye, Lin Gan, Lun Dai, Yu Dai, Xuefeng Guo, Hu Meng, Bin Yu, Zujin Shi, Kuanping Shang, Guogang Qin
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  ABSTRACT: We have developed a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, being free from additional etching or harsh processes, being universal to arbitrary substrates, and being compatible to Si microelectronic technology, can easily be applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential applications in integrated nano-optoelectronic systems. A typical as-fabricated solar cell shows excellent photovoltaic behavior, with an open-circuit voltage of ∼0.51 V, a short-circuit current density of ∼5.75 mA cm(-2), and an energy conversion efficiency of ∼1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest that both the developed graphene patterning method and the as-fabricated CdSe NB/graphene Schottky junction solar cells have reachable application prospects.
  Nanoscale 03/2011; 3(4):1477-81. · 5.91 Impact Factor