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ABSTRACT: In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.
Applied Physics Letters 11/1990; · 3.84 Impact Factor
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ABSTRACT: Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect‐free epitaxial islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects of growth temperature on the degree of faceting have been studied. The hydrogen prebake temperatures as low as 1000 °C have proven to be sufficient for high quality Si deposition without sidewall oxide undercutting.
Applied Physics Letters 08/1990; · 3.84 Impact Factor
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ABSTRACT: The authors have developed a salicide process for CMOS
(complementary metal-oxide-semiconductor) applications using ion beam
mixing for silicide formation and doped silicide in conjunction with RTA
(rapid thermal annealing) drive-in for shallow silicided junction
formation and have investigated the fundamental issues related to this
process. Specifically, they have studied (i) the effects of ion-beam
mixing and RTA on the properties of Ti salicide and the interaction
between Ti and SiO<sub>2</sub>; (ii) self-aligned TiN<sub>x</sub>O<sub>y
</sub>/TiSi<sub>2</sub> formation and phase transformation (iii) the
mechanism of impurity redistribution and segregation and of junction
formation during RTA drive-in; and (iv) the performance and reliability
of fabricated salicide devices. Results show that this process may have
a great impact on future VLSI (very-large-scale integration) technology
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on; 06/1989
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ABSTRACT: High quality thin silicon epitaxial films have been grown on heavily doped p<sup>+</sup> substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH 2 Cl 2 , and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (≪200 Å/decade) and excellent crystalline perfection with low defect density have been obtained.
Applied Physics Letters 06/1989; · 3.84 Impact Factor
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ABSTRACT: Shallow silicided p<sup>+</sup>/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive‐in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO 2 /TiSi 2 interface is identified for the first time in the form of B 2 O 3 . p<sup>+</sup>/n diodes and short‐channel metal‐oxide‐semiconductor field‐effect transistors with good electrical characteristics have been fabricated using doped silicide technology.
Applied Physics Letters 05/1989; · 3.84 Impact Factor
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ABSTRACT: A SALICIDE process is described in this paper, in which ion-beam mixing is used for silicide formation, and doped silicide in conjunction with RTA drive-in are used for shallow silicided junction formation. Fundamental issues related to this process have been investigated, including (i) effects of ion-beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiNxOy TiSi2 contact barrier formation and phase transformation; (iii) the mechanism of impurity rediWstrbution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.
MRS Proceedings. 12/1988; 146.
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ABSTRACT: The uniformity of Ti silicide resistance has been greatly improved by using an ion-beam mixing technique. The integrity of both MOS capacitors and p-n junction diodes has been improved. N-channel MOS field-effect transistors fabricated with this technique show better electrical characteristics, less electron trapping in the gate oxide, and better hot-carrier resistance than with devices made without the use of ion-beam mixing.< >
IEEE Electron Device Letters 07/1988; · 2.85 Impact Factor
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ABSTRACT: The electrical properties of thin nitrided oxide (∼100 Å) formed by rapid thermal nitridation (RTN) in pure NH 3 have been studied. It is found that the current‐voltage characteristic of RTN oxides follows a Fowler–Nordheim tunneling behavior with modifications caused by electron trapping processes at the oxide surface and interface. The trapping density is dependent on the RTN conditions. At the interface, both fixed charge (N f ) and interface state (D it ) densities exhibit turnaround phenomena when the RTN process proceeds. The maximum values of N f and D it at the turnaround points are lower for the higher temperature RTN, suggesting a viscous flow related strain relieving mechanism associated with RTN of thin oxides. Films with superior endurance behavior (Q BD =20.4 C/cm<sup>2</sup> compared with Q BD =5.1 C/cm<sup>2</sup> of thermal oxide under 10 mA/cm<sup>2</sup> constant current stress) have been obtained by RTN at 1000 °C, 10 s.
Applied Physics Letters 06/1988; · 3.84 Impact Factor
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ABSTRACT: One of the most important issues in the self‐aligned silicide technology has been lateral silicide formation over the sidewall oxide spacers. In this work, the lateral silicide growth has been considerably suppressed by the use of ion beam mixing and rapid thermal annealing. Metal‐oxide‐semiconductor transistors fabricated using this technology show good electrical characteristics with negligible conduction between gate and source/drain electrodes.
Applied Physics Letters 04/1988; · 3.84 Impact Factor
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ABSTRACT: The formation of the TiN x O y /TiSi 2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH 3 has been studied. The chemical stability in dilute HF and the effectiveness of TiN x O y on TiSi 2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good chemical stability in dilute HF at least for 60 s and Al/TiN x O y /TiSi 2 /Si is thermally stable up to 500 °C for 30 min sintering.
Applied Physics Letters 07/1987; · 3.84 Impact Factor
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ABSTRACT: We have developed a technique for the fabrication of shallow, silicided n<sup>+</sup>-p and p<sup>+</sup>-n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion‐beam mixing with Si ions and low‐temperature annealing, and the subsequent drive‐in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal‐oxide‐semiconductor field‐effect transistor in a self‐aligned fashion and can have a significant impact on complementary metal‐oxide‐semiconductor devices.
Journal of Applied Physics 07/1987; · 2.17 Impact Factor
