Tsu-Jae King

Publications (2)2.85 Total impact

• Conference Proceeding: Full/partial depletion effects in FinFETs

  W. Xiong, C.R. Cleavelin, R. Wise, S. Yu, M. Pas, R.J. Zaman, M. Gostkowski, K. Matthews, C. Maleville, P. Patruno, Tsu-Jae King, J.P. Colinge
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  ABSTRACT: Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD devices with applied negative back-gate bias.
  SOI Conference, 2004. Proceedings. 2004 IEEE International; 11/2004
• Article: Improvement of FinFET electrical characteristics by hydrogen annealing

  Weize Xiong, G. Gebara, J. Zaman, M. Gostkowski, B. Nguyen, G. Smith, D. Lewis, C.R. Cleavelin, R. Wise, Shaofeng Yu, M. Pas, Tsu-Jae King, J.P. Colinge
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  ABSTRACT: Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of the fins, resulting in a lower threshold voltage and improved drain-induced barrier lowering (DIBL) characteristics. Reduction of the leakage current by up to four orders of magnitude is obtained after edge rounding by hydrogen annealing. In addition, a 50% decrease of DIBL is observed, due to fin width reduction.
  IEEE Electron Device Letters 09/2004; · 2.85 Impact Factor