ABSTRACT: We report the experimental demonstration of deep-submicrometer inversion-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs with ALD high- k Al<sub>2</sub>O<sub>3</sub> as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 muA/mum and transconductances of 538-705 muS/mum. The 100-nm device has a drain current of 801 muA/mum and a transconductance of 940 muS/mum. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.
IEEE Electron Device Letters 08/2009; · 2.85 Impact Factor