Publications (2)2.85 Total impact
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Article: 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode MOSFET
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ABSTRACT: We report the experimental demonstration of deep-submicrometer inversion-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As MOSFETs with ALD high- k Al<sub>2</sub>O<sub>3</sub> as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 muA/mum and transconductances of 538-705 muS/mum. The 100-nm device has a drain current of 801 muA/mum and a transconductance of 940 muS/mum. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.IEEE Electron Device Letters 08/2009; · 2.85 Impact Factor -
Article: 0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET
[show abstract] [hide abstract]
ABSTRACT: We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 mu A/mu m and transconductances of 538-705 mu S/mu m. The 100-nm device has a drain current of 801 mu A/mu m and a transconductance of 940 mu S/mu m. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.Birck and NCN Publications.
