M. Abbasi

Chalmers University of Technology, Goeteborg, Västra Götaland, Sweden

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Publications (27)9.51 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: A G-Band planar stubbed branch-line balun is designed and fabricated in 3μm thick BCB technology. This topology of the balun does not need thru-substrate via hole or thin-film resistor which makes it extremely suitable for realization on single-layer high-resistivity substrates commonly used at millimeter-wave or post-processed BCB layers on top of standard semi-insulating wafers. The design is simulated and validated by measurements. Measurement results on two fabricated back-to-back baluns show better than 10 dB input and output return loss and 3.2 dB insertion loss from 140 to 220 GHz.
    Microwave Conference Proceedings (APMC), 2013 Asia-Pacific; 01/2013
  • S. Carpenter, M. Abbasi, H. Zirath
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    ABSTRACT: This paper presents a millimeter-wave (mmWave) direct quadrature modulator in 0.25μm InP DHBT technology. The modulator operates over the frequency range of 115 GHz to 155 GHz and is based on double balanced Gilbert mixer cells. The design is tested with a CW input signal at 1 GHz and 0 dBm LO power and exhibits up to 6 dB conversion gain and more than 22 dB image rejection ratio. The LO signal is suppressed by more than 27 dB. The chip consumes 78 mW DC power and can provide up to 3 dBm RF power in saturation. The active chip area is 560μm× 440μm.
    Microwave Integrated Circuits Conference (EuMIC), 2013 European; 01/2013
  • Fernando Diaz Canales, Morteza Abbasi
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    ABSTRACT: A four-stage power amplifier in the 75–90 GHz range with integrated output power detector has been designed and fabricated in a 0.1 μm GaAs pHEMT process. In-phase parallel combining is used in the last stages of the amplifier for increased output power and linearity. The chip exhibits 25 dB of gain and can deliver up to 19 dBm at the 1dB compression point, and 20 dBm when driven into saturation. The output third order intercept point (OIP3) of the amplifier is measured to be up to 29 dBm. The output voltage of the detector varies linearly by 1.5 V for 20 dB of output power range. The chip consumes less than 750 mW when fully driven into saturation and all transistors are biased with no more than 3.5 V for reliable operation.
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International; 01/2013
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    ABSTRACT: In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher fT (162 GHz) and 72% higher fmax (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.
    Solid-State Electronics 01/2013; 79:268–273. · 1.48 Impact Factor
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    ABSTRACT: A cryogenic wideband 4–8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
    IEEE Microwave and Wireless Components Letters 01/2012; 22(3):144-146. · 1.78 Impact Factor
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    ABSTRACT: This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE; 01/2012
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    ABSTRACT: A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of 1.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
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    ABSTRACT: Integrated millimterwave heterodyne receivers for remote sensing applications in the frequency range 90 to 220 GHz utilizing active mHEMT devices have been designed, fabricated and characterized. Packages for the MMICs have also been designed and evaluated. For the integrated receivers, noise figures of 3.5 and 8dB are obtained at 100 and 220 GHz respectively at room temperature. When cooled to 20 K, a noise temperature of 60–80 K is obtained from 90–112 GHz for a packaged amplifier MMIC.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
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    ABSTRACT: The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
    Microwave Integrated Circuits Conference (EuMIC), 2012 7th European; 01/2012
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    ABSTRACT: This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1- μm GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a three-stage low-noise amplifier, and a sub-harmonically pumped resistive mixer with on-chip local oscillator frequency multiplication chain. The transmitter chip is the dual of the receiver chip by inverting the direction of the RF amplifier. The chips are mounted on 5-mm silicon lenses in order to interface the antenna to the free space and are packaged into two separate modules.
    IEEE Transactions on Microwave Theory and Techniques 03/2011; · 2.23 Impact Factor
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    ABSTRACT: A 60 GHz direct carrier quadrature modulator is designed and fabricated in 0.15 µm mHEMT technology. The design is based on passive mixers and therefore reciprocal which makes it possible to be used both as modulator and demodulator. The modulator has an input bandwidth of 0–5 GHz on each of the I and Q ports and an RF bandwidth of 53–68 GHz. Carrier leakage to the output port is eliminated by addition of an inductive path from the LO port to the RF port. The modulator requires 5 dBm LO power and can output up to −6 dBm RF power in linear region and up to −4 dBm when driven into saturation. When operated as an SSB mixer, the conversion loss is measured to be 11 dB and image and LO signals are suppressed by as much as 30 dB compared to the desired signal. For demonstration, a pair of the presented modulator/demodulator is used to transmit 7Gbps BPSK signal over 1m and 10Gbps QPSK signal over 0.5m wireless link.
    01/2011;
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    ABSTRACT: A compact 60 GHz direct conversion quadrature transmitter is designed and fabricated in 45 nm standard LP CMOS. The transmitter features an integrated power amplifier with continuous output level control and interfaces binary data signals with nominal peak-to-peak voltage swing of 300 mV. The highest measured modulation bandwidth is limited by the measurement setup to 4 GHz but is simulated to be as high as 10 GHz. In single sideband up-converting operation mode, the measured image suppression ratio is 22 dB with 36 dB of carrier suppression corresponding to approximately 8% EVM in the output signal constellation. The output RF frequency can be from 54 GHz to 66 GHz to accommodate several channels and the output power can be adjusted from -3 dBm to 10 dBm. The chip is operated fro ma2V supply and draws 180 mA current. Index Terms— direct conversion, quadrature transmitter, dif- ferential 90 ◦ coupler, 60 GHz, 45nm CMOS.
    01/2011;
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    ABSTRACT: In this paper, we present results of work done in packaging highly integrated circuits based on 100nm mHEMT technology. We present several examples of fully integrated receivers and sources for frequencies bands 90-130 GHz and 160-210 GHz. The circuits are packaged into waveguide blocks, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions based on 50 um alumina substrate, and including via holes, are used to effectively interface the MMICs to a rectangular waveguide at RF without using tuning structures to resonate wire-inductance. Noise and return loss are characterized on wafer and after packaging. Typical increase of 0.7 dB in the NF is observed at 90-130 GHz after the packaging and 1 dB at 160-210 GHz. We address the issue of MMICs with high level of integration resulting in large cavities in the package causing instabilities for certain biasing conditions. Some of the packaged modules are characterized at both room and cryogenic temperatures.
    Microwave Workshop Series on Millimeter Wave Integration Technologies (IMWS), 2011 IEEE MTT-S International; 01/2011
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    ABSTRACT: In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions are used to interface the MMIC to the waveguide. A breakout LNA circuit is also packaged, and its performance is compared to the receiver. The LNA noise was characterized on a wafer and after packaging. The packaged module is measured at both room and cryogenic temperatures, NF of 3.7 dB is measured at 300 K and 0.9 dB at 20 K.
    IEEE Microwave and Wireless Components Letters 11/2010; · 1.78 Impact Factor
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    ABSTRACT: We present results of packaged mm-wave receiver components based on 100nm mHEMT technology. The components are to be used for observations of the atmospheric lines at 118 GHz and 183 GHz. A 90-130 GHz single-chip receiver MMIC, including LNA, mixer and LO multiplier chain, is packaged in to a waveguide block, characterized and compared to on-wafer measurements. A breakout LNA circuit is also packaged and its performance is compared to the receiver. A 183 GHz source is designed to be used as a LO source.
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on; 10/2010
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    ABSTRACT: A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standard LP CMOS. The cascode configuration, with the common gate device placed in a separate P-well, provides reliable operating condition for the devices. The amplifier shows 20 dB small-signal gain centered at 60 GHz with a flat frequency response and 1-dB bandwidth of 10 GHz. The broadband large-signal operation is also ensured by providing constant load resistance to both stages over the entire band and coupling them with a dual resonance matching network. The chip delivers 11.2 dBm output power at 1-dB compression and up to 14.5 dBm power in saturation. The power amplifier operates with 2 V supply and draws 90 mA total current which results in 14.4% maximum PAE. The output third order intercept point is measured to be 18 dBm for two-tone measurement at 60 GHz with 0.5 GHz, 1 GHz and 2 GHz frequency separations.
    Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE; 06/2010
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    ABSTRACT: The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
    Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on; 01/2010
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    ABSTRACT: An E-band transistor-based balanced frequency tripler is implemented using a 0.15 ¿m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90° hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power.
    Microwave Conference, 2009. APMC 2009. Asia Pacific; 01/2010
  • [Show abstract] [Hide abstract]
    ABSTRACT: The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
    Microwave Conference, 2009. APMC 2009. Asia Pacific; 01/2010
  • Source
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    ABSTRACT: Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 ??m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc power. The signal at the fundamental frequency is suppressed more than 25 dB compared to the desired output signal over the band of interest. The G-band frequency sextupler (??6) chain covers 155 to 195 GHz with 0 dBm peak output power and requires 6.5 dBm input power and 92.5 mW dc power. The input signal to the multiplier chain can be reduced to 4 dBm while the output power drops only by 0.5 dB. The unwanted harmonics are suppressed more than 30 dB compared to the desired signal. An additional 183 GHz power amplifier is presented to be used after the ??6 frequency multiplier chain if higher output power is required. The amplifier delivers 5 dBm output power with a small-signal gain of 9 dB from 155 to 195 GHz. The impedance matching networks are realized using coupled transmission lines which is shown to be a scalable and straightforward structure to use in amplifier design. Microstrip transmission lines are used in all the designs.
    IEEE Transactions on Microwave Theory and Techniques 01/2010; · 2.23 Impact Factor