Publications (3)2.55 Total impact
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ABSTRACT: Results are presented of a theoretical and experimental investigation of the dynamic conductivity in the microwave region of a two-dimensional lateral-surface superlattice. A theoretical analysis based on the solution of the Boltzmann kinetic equation for 2D electrons in a laterally modulating potential, an external magnetic field and a microwave field shows that the components of the dynamic conductivity tensor have an oscillatory character of various types. A preliminary experimental study of the dynamic conductivity in the microwave region is presented. Measurements of the reflection coefficient of the microwave radiation (f=38 GHz) from a GaAs/AlGaAs lateral superlattice have been carried out. For the first time Weiss-type oscillations have been observed in a dynamic regime.Journal of Physics Condensed Matter 12/1998; 7(6):1101. · 2.55 Impact Factor
Article: A quasi-classical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples[show abstract] [hide abstract]
ABSTRACT: In this work we investigate microwave induced resistance oscillations (MIROs) in a GaAs/AlGaAs heterostructure containing a high mobility two-dimensional electron gas (2DEG). We show that MIROs can be explained within a purely classical mechanism based on the Boltzmann equation [L.I. Magarill, I.A. Panaev, S.A. Studenikin, Condens. Matter 7 (1995) 1101]. The MIRO-related transitions can be observed in absorption and we demonstrate it experimentally for the first time using EPR-cavity absorption technique. Next we investigate MIROs and Shubnikov–de Haas (SdH) oscillations at milli-Kelvin temperatures. We find that MIROs persist to approximately three times lower magnetic field as compared with the SdH oscillations, which at temperatures below 50 mK are defined purely by the quantum relaxation time. This finding indicates a possible quasi-classical origin of MIROs.Physica E: Low-dimensional Systems and Nanostructures.
Article: A quasiclassical mechanism for microwave induced resistance oscillations in high mobility GaAs/AlGaAs 2DEG samples