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ABSTRACT: We studied the growth of a single standing carbon nanotube (CNT) which was grown by plasma-enhanced chemical vapor deposition in the gate hole formed by conventional photolithography in the silicon nitride. The number of CNT per hole increases with increasing the gate hole diameter and a single CNT could be grown in a 3 μm hole. A single standing CNT in a gate hole exhibited the turn-on field of 1.6 V/μm and the current density of 16 μA at 3.3 V/μm. The emission currents follow the Fowler–Nordheim equation with a field enhancement factor of 1.14×107.
Applied Physics Letters 12/2005; 87(24):243106-243106-3. · 3.84 Impact Factor
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Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International; 09/1997
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Vacuum Microelectronics Conference, 1997. Technical Digest., 1997 10th International; 09/1997
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ABSTRACT: The N doping effect on the electrical conductivity and electron emission property for diamondlike carbon (DLC) films deposited by plasma enhanced chemical vapor deposition (PECVD) has been studied. The electrical conductivity can be widely varied by n -type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer–Neldel relation: σ<sub>0</sub>=σ<sub>00</sub> exp (AE<sub>a</sub>) with A=19 eV <sup>-1</sup> and σ<sub>00</sub>=9×10<sup>-8</sup> S/cm. The emission current for heavily N doped DLC films is much higher than that of undoped DLC even though the lightly N doped film shows much smaller current. © 1997 American Vacuum Society.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 04/1997; · 1.34 Impact Factor
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ABSTRACT: We deposited diamondlike carbon (DLC) films of various hydrogen contents by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF <sub>4</sub> plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF <sub>4</sub> plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film. © 1997 American Vacuum Society.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 04/1997; · 1.34 Impact Factor
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ABSTRACT: We have studied the electron emission behavior of the diamondlike carbon (DLC) films by plasma enhanced chemical vapor deposition using a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF4 plasma exposure on its surface were carried out alternatively. The electron emission current increases with CF4 plasma exposure time. The increase in emission current appears to be due to the n-type behavior of the DLC. © 1997 American Institute of Physics.
Applied Physics Letters 03/1997; 70(11):1381-1383. · 3.84 Impact Factor
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ABSTRACT: We have studied the electron emission characteristics of
tetrahedral amorphous carbon (ta-C) films with different nitrogen
content. With increasing N content in ta-C, the room temperature
conductivity as well as the emission current decreases and then
increases, resulting in minima. The Fermi-level shifts toward the
conduction band and thus the work function decreases by N doping in
ta-C, however the emission currents of doped ta-C films are less than
those of undoped ta-C
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International; 08/1996
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ABSTRACT: The N doping effect on the electrical conductivity and electron emission property for diamond like carbon (DLC) films deposited by PECVD has been studied. The electrical conductivity can be widely varied by n-type doping of the DLC. The relationship between the prefactor of conductivity and the conductivity activation energy satisfy the Meyer-Neldel relation: σ<sub>0</sub>=σ<sub>00</sub>exp(AE <sub>a</sub>) with A=19 eV<sup>-1</sup> and σ<sub>00</sub>=9×10<sup>-8</sup> S/cm. The emission currents for heavily N doped DLC films are much higher than undoped DLC even though lightly N doped films show much smaller currents
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International; 08/1996
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[show abstract]
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ABSTRACT: We deposited diamond-like-carbon (DLC) films of various hydrogen content by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF<sub>4</sub> plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF<sub>4</sub> plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International; 08/1996
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ABSTRACT: Hydrogen‐free diamond‐like carbon (DLC) films were deposited by the layer‐by‐layer technique using plasma enhanced chemical vapor deposition (PECVD), i.e., the alternative deposition of thin DLC layer and subsequent CF 4 plasma exposure on its surface. The hydrogen‐free DLC could be grown on the Si wafer by repeated deposition of the 5 nm DLC layer and subsequent 200 s CF 4 plasma exposure on its surface. On the other hand, the conventional DLC deposited by PECVD contains 25 at. % hydrogen inside. The CF 4 plasma exposure on the thin DLC layer appears to etch weak C–C bonds and break hydrogen bonds, resulting in a widening optical band gap and increasing conductivity activation energy. © 1996 American Institute of Physics.
Applied Physics Letters 07/1996; · 3.84 Impact Factor
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ABSTRACT: We report on the growth mechanism and density control of vertically aligned carbon nanotubes using a triode plasma enhanced chemical vapor deposition system. The deposition reactor was designed in order to allow the intermediate mesh electrode to be biased independently from the ground and power electrodes. The CNTs grown with a mesh bias of + 300 V show a density of ∼ 1.5 μm− 2 and a height of ∼ 5 μm. However, CNTs do not grow when the mesh electrode is biased to − 300 V. The growth of CNTs can be controlled by the mesh electrode bias which in turn controls the plasma density and ion flux on the sample.
Thin Solid Films 515(4):1380-1384. · 1.89 Impact Factor
