J. L. Gautier

Université de Cergy-Pontoise, 95001 CEDEX, Ile-de-France, France

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Publications (18)5.25 Total impact

  • Jean‐Luc Gautier · Farid Temcamani · Myrianne Régis · Hilda Diab
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    ABSTRACT: An integrated bipolar differential amplifier was optimized to have maximum common mode rejection ratio (CMRR).This amplifier was then used as combiner and splitter baluns. A prototype was fabricated using a SiGe bipolar technology. Measurements show high CMRR and good agreement with simulations. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1253–1256, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25981
    Microwave and Optical Technology Letters 06/2011; 53(6). DOI:10.1002/mop.25981 · 0.62 Impact Factor
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    ABSTRACT: This paper describes a 2.4 GHz single-ended switched gain low noise amplifier (SG-LNA) in a 0.35 mum SiGe BiCMOS process. In the design, specific architecture decisions were made in consideration of system-on-chip implementation. The architecture profits from a two cascode stage topology with a shunt resistive feedback in the first cascade-topology stage. The SG-LNA achieved a maximum small signal gain of 34.3 dB within input 1-dB compression point (ICP1dB) of -22 dBm in high-gain mode (HGM), a gain of 25.4 dB within ICP<sub>1dB</sub> of -13.8 dBm in medium-gain mode (MGM) , and a minimum gain of 18.3 dB within ICP<sub>1dB</sub> of -6.8 dBm in low-gain mode (LGM). The noise figures (NF) are 2.9 dB, 5.5 dB and 5.9 dB in HGM, MGM and LGM, respectively. Because of using a Common-Gate topology as an active input matching, the SG-LNA presented a good input and output return losses in all modes. All biases applied are active. The SG-LNA consumes a maximum DC current of 42 mA from a 3.3 volt DC supply.
    Advances in Electronics and Micro-electronics, 2008. ENICS '08. International Conference on; 11/2008
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    ABSTRACT: A 2.4GHz front-end system design for wide spectrum WLAN applications is presented in a 0.35 μm SiGe BiCMOS Technology. This transceiver front-end contains a receive (Rx) chain with a two-stage cascode low noise amplifier (LNA) and an active down-conversion Rx mixer, and a transmit (Tx) chain composed of a Gilbert-Cell core up-conversion Tx mixer and a high-gain Driver Amplifier (DA). The high linear LNA shows a gain of 15.5 dB, an noise figure (NF) of 2.28 dB and an input- referred third-order intercept point (IP3) of +2.4 dBm with 1-dB gain bandwidth (BW) of 1.5 GHz. The single-balanced Rx mixer exhibited a gain and 1-dB gain BW of +6.8 dB and 1.5 GHz. Also a double-balanced Tx mixer with a gain and input/output return loss of -1.3dB and below -35dB, respectively, and a DA with a gain and output-referred IP3 of +29.2dB and +21.2dBm, respectively, is developed. The NF, input-referred IP3 and DC power consumption of Rx string (from antenna to Rx mixer) were achieved 4.4 dB, -15.4 dBm and 30 mW respectively. The output-referred IP3 and power consumption of Tx chain were +20.5 dBm and 125 mW, respectively.
    Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on; 05/2008
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    ABSTRACT: This paper describes a low voltage low noise amplifier (LNA), designed using 0.35¿m SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and output impedance matched to 50¿.
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    ABSTRACT: A fully monolithic radio transceiver front-end for wireless applications of 2.4 to 2.5 GHz band is presented in a 0.35 mu m SiGe BiCMOS technology. This high performance transceiver contains a receive (Rx) chain with a two-stage cascode low noise amplifier, an active transversal band-pass filter, an active down-conversion Rx mixer, and a transmit (Tx) chain composed of a Gilbert-Cell based up-conversion Tx mixer, an active band-pass filter and a high-gain Driver Amplifier. A low-size LC-tuned MOS-VCO with a phase noise of -130.3 dBc for 1 MHz offset from center frequency was integrated to drive the mixers. The high linear receiver exhibited a gain of +27 dB and an excellent noise figure (NF) of 3 dB, while the transmit string has a gain of 29.4 dB and an output-referred third-order intercept point (OIP3) of +17.5 dBm. The overall receiver and transmitter consumption is about 170 mW and 180 mW for a 3.3V DC supply, respectively.
    6th International Symposium on Communication Systems, Networks and; 01/2008
  • M. Dousti · J. L. Gautier
    Proceedings of the Fifth IASTED International Conference on Communication Systems and Networks, August 28-30, 2006, Palma de Mallorca, Spain; 01/2006
  • M. Dousti · J. L. Gautier
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    ABSTRACT: The principle of recursive filters is well known in digital filtering. This paper deals with active recursive filters. A new design approach is presented. It will be shown that how active elements can be used in the design of amplification elements and large microwave time delay. The analytical and computer-simulated results will be presented for an active bandpass filter in the C-band.
    Proceedings of the 4th WSEAS International Conference on Electronics, Hardware, Wireless and Optical Communications; 02/2005
  • F. Temcamani · H. Diab · M. Regis · J.-L. Gautier
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    ABSTRACT: In this paper, a 1.3 GHz band pass filter, based on a Sallen and Key cell, is presented. A new amplifier topology of the S-K cell is proposed, with input and output differential amplifiers optimized to have high performances in terms of CMMR, IP3 and noise figure. All the filter stages were realized with a SiGe BiCMOS technology. Comparison showed a good agreement between simulation and measurements. In particular, the S-K amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured. The measured even-mode rejection is close to 30 dB at the center frequency.
    Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE; 07/2004
  • F. Temcamani · H. Diab · M. Régis · J. L. Gautier
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    ABSTRACT: A 1.3-GHz Sallen and Key filter, based on a voltage amplifier designed with an original topology, is presented. SiGe realization showed good agreement between simulation and measurement. In particular, the amplifier gain and the filter selectivity can be tuned and Q factors of up to 60 were measured. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 22–24, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11115
    Microwave and Optical Technology Letters 10/2003; 39(1):22 - 24. DOI:10.1002/mop.11115 · 0.62 Impact Factor
  • H. Diab · F. Temcamani · J.L. Gautier
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    ABSTRACT: This paper deals with the design of microwave analog biquadratic filters using voltage amplifiers. A prototype bandpass filter is monolithically integrated. The chip size is only 1.3 mm2 on GaAs substrate. The filter specifications are: 2Ghz central frequency and a 3dB bandwidth of 40 MHz. A comparison with the SiGe bipolar technology is represented. The circuit represents a building block suitable for use in the cascade realization of higher order filters.
    Microwave Conference, 2002. 32nd European; 10/2002
  • M. Dousti · B. Delacressonniere · F. Temcamani · J. L. Gautier
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    ABSTRACT: The principle of transversal filters is well known in digital filtering. This paper deals with active transversal filters. A new design approach is presented. We show how active elements can be used in the design of amplification elements and large microwave time delay. We present analytical and computer-simulated results for an active bandpass filter in the C-band. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 66–69, 1998.
    Microwave and Optical Technology Letters 09/1998; 19(1):66-69. DOI:10.1002/(SICI)1098-2760(199809)19:13.0.CO;2-1 · 0.62 Impact Factor
  • M. Dousti · B. Delacressonniere · F. Temcamani · J. L. Gautier
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    ABSTRACT: In this letter, we show how active elements can be effectively employed in the design of an important microwave time delay. We present analytical and computer-simulated results for an active time delay, and layout design using microwave monolithic integrated circuit (MMIC) technology. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 382–385, 1997.
    Microwave and Optical Technology Letters 12/1997; 16(6):382-385. DOI:10.1002/(SICI)1098-2760(19971220)16:63.0.CO;2-2 · 0.62 Impact Factor
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    S. Balatchev · J.L. Gautier · B. Delacressonniere
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    ABSTRACT: This paper describes a novel and simple method of compensation for resistive mixers conversion losses. We show that a negative conductance can be used to optimize the resistive mixers conversion losses. Finally, we present the design and the simulation of an optimized simple MMIC resistive mixer with 0 dB conversion loss.
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    ABSTRACT: Active filtering has been an area of interest for several years. Well-stabilised commercial MMIC processes with reasonable costs now exist (with multichip projects). The authors report the design of a narrowband active MMIC bandpass filter centred about 4 GHz
    Electronics Letters 06/1995; 31(11-31):889 - 891. DOI:10.1049/el:19950579 · 1.07 Impact Factor
  • F. Fouquet · J.L. Gautier · D. Pasquet · C. Josse
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    ABSTRACT: This paper presents the simulation and measurement results of a broadband MMIC amplifier. This amplifier differs from usual broadband MMIC amplifiers such as resistive matching and those distributed. Its topology is based on the use of active matching and active biasing.
    Microwave Conference, 1993. 23rd European; 10/1993
  • F. Temcamani · B. Delacressonniere · P. Lida · J. L. Gautier
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    ABSTRACT: We studied even-mode rejection of FET differential structures. The coupling admittance appears as the essential factor. We have analysed both passive and active coupling admittances. An accurate choice of the latter allowed rejection enhancement. From these theoretical results a MMIC structure has been designed.
  • E. Bourdel · B. Delacressonniere · J. L. Gautier · C. Josse · P. Pouvil
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    ABSTRACT: An analogue frequency divider implemented with a new GaAs high electron mobility transistor (HEMT) MMIC technology is presented. This frequency divider is based on the frequency regeneration principle. The circuit operates in a frequency division bandwidth of 700 MHz at — I dBm incident input power level around 12.8 GHz. © 1992 John Wiley & Sons, Inc.
    Microwave and Optical Technology Letters 12/1992; 5(14):721 - 722. DOI:10.1002/mop.4650051405 · 0.62 Impact Factor
  • D. Pasquet · M. Abdellaoui · J.L. Gautier · A. Verdier
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    ABSTRACT: The measurement of S parameters with a network analyser is affected by both systematic and random errors. Several error models exist for systematic errors. A similar model is proposed to evaluate the random errors which affect the measured values of S parameters when systematic errors have been extracted. This error model is independent of the measured DUT and characterises only the sensitivity of a given calibration procedure to random error. A simulation on a TRL calibration is shown as an example.
    Electronics Letters 08/1992; 28(15-28):1426 - 1428. DOI:10.1049/el:19920907 · 1.07 Impact Factor

Publication Stats

21 Citations
5.25 Total Impact Points

Institutions

  • 1997–2011
    • Université de Cergy-Pontoise
      95001 CEDEX, Ile-de-France, France
  • 1995–2008
    • École Nationale Supérieure de l'Electronique et de ses Applications
      Cergy, Île-de-France, France
  • 2002
    • Grande école d'ingénieurs généraliste en électronique
      Angers, Pays de la Loire, France