Y. Taur

Publications (3)10.01 Total impact

• Article: VB-4 charge-coupled devices in epitaxial HgCdTe/CdTe heterostructure

  M.E. Kim, Y. Taur, S H Shin, G. Bostrup, J C Kim, D.T. Cheung
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  ABSTRACT: Not Available
  IEEE Transactions on Electron Devices 11/1981; 28(10):1250- 1251. · 2.32 Impact Factor
• Article: Charge‐coupled devices in epitaxial HgCdTe/CdTe heterostructure

  M. E. Kim, Y. Taur, S. H. Shin, G. Bostrup, J. C. Kim, D. T. Cheung
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  ABSTRACT: An n‐channel metal‐insulator‐semiconductor charge‐coupled device has been successfully demonstrated in p‐type epitaxial Hg 0.7 Cd 0.3 Te (λ co ≃5.0 μm, 77 K) grown by liquid‐phase epitaxy on CdTe substrate. A three‐bit, three‐phase device was operated at 77 K, yielding a charge transfer efficiency greater than 0.995 between 5 and 50 kHz clock frequencies. Ion‐implanted n⁺/p diodes facilitated signal input and direct output signal detection.
  Applied Physics Letters 09/1981; · 3.84 Impact Factor
• Article: Millimeter‐wave generation at 110 GHz by laser modulation of a HgCdTe photodiode

  Y. Taur, D. T. Cheung, E. H. Huffman, J. SooHoo, R. A. Gudmundsen
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  ABSTRACT: Millimeter‐wave power is generated from an n⁺/p Hg 0.74 Cd 0.26 Te photovoltaic diode illuminated by two CO lasers of 5.467‐ and 5.478‐μm wavelengths, respectively. The output frequency is determined by the laser line separation to be 110 GHz. A maximum power of 0.75 μW is observed when the diode is dc biased at 0.5 V in the reverse direction.
  Applied Physics Letters 06/1981; · 3.84 Impact Factor