[show abstract][hide abstract] ABSTRACT: Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties. The challenge for utilizing this centre is to realize the hitherto elusive optical access to its electronic spin. Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Our measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the centre as an efficient spin-photon quantum interface.
[show abstract][hide abstract] ABSTRACT: The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar responses of single centers and a SiV ensemble in a low strain reference sample prove our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.
[show abstract][hide abstract] ABSTRACT: We demonstrate a quantum key distribution (QKD) testbed for room temperature
single photon sources based on defect centres in diamond. A BB84 protocol over
a short free-space transmission line is implemented. The performance of
nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is
evaluated and an extrapolation for next-generation sources with enhanced
efficiency is discussed.
New Journal of Physics 10/2013; 16(2). · 4.06 Impact Factor
[show abstract][hide abstract] ABSTRACT: We study single silicon vacancy (SiV) centres in chemical vapour deposition
(CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high
quality, low stress CVD diamond film by using temperature dependent
luminescence spectroscopy in the temperature range 5-295 K. We investigate in
detail the temperature dependent fine structure of the zero-phonon-line (ZPL)
of the SiV centres. The ZPL transition is affected by inhomogeneous as well as
temperature dependent homogeneous broadening and blue shifts by about 20 cm-1
upon cooling from room temperature to 5 K. We employ excitation power dependent
g(2) measurements to explore the temperature dependent internal population
dynamics of single SiV centres and infer almost temperature independent
New Journal of Physics 10/2012; 15(4). · 4.06 Impact Factor
[show abstract][hide abstract] ABSTRACT: We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.
[show abstract][hide abstract] ABSTRACT: Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins. Here, we present a method for the fabrication of one- and two-dimensional photonic crystal microcavities with quality factors of up to 700 in single crystal diamond. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy colour centres, and we measure an intensity enhancement factor of 2.8. The controlled coupling of colour centres to photonic crystal microcavities could pave the way to larger-scale photonic quantum devices based on single crystal diamond.
[show abstract][hide abstract] ABSTRACT: We report on the production of nanodiamonds (NDs) with 70–80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The high crystalline quality NDs display intense narrowband (7 nm) room temperature luminescence at 738 nm from in situ incorporated silicon vacancy centers. We demonstrate bright, narrowband single photon emission with >100 000 cps. Due to the narrow fluorescence bandwidth as well as the near-infrared emission these NDs are also suitable as fluorescence labels with significantly enhanced performance for in vivo imaging.
[show abstract][hide abstract] ABSTRACT: Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows single-photon emission, but within a large, phonon-broadened spectrum (~100nm), which strongly limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 10^8/cm^2 and 10^14/cm^2 and energies between 30keV and 1.8MeV. The Ni-related centers show emission in the near infrared spectral range (~770nm to 787nm) with a small line-width (~3nm FWHM). A measurement of the intensity correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count rate of 77.9 kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles. Comment: 8 pages, published in conference proceedings of SPIE Photonics Europe 2010
[show abstract][hide abstract] ABSTRACT: Microcavities in diamond-based photonic crystals are being considered as an attractive architecture to manipulate and control atom-photon coupling. Here we consider a photonic crystal structure consisting of a triangular lattice of air holes etched into a thin free-standing membrane of diamond. By introducing point defects into the periodic structure, light can be localized in three dimensions within a volume smaller than one cubic wavelength. Our work is focused on the "Zero missing hole waveguide-section cavity (M0)" cavity, where the defect is created by shifting two neighboring holes outwards. The field distribution as well as the resonant frequency and the Q-factor of the cavity mode are calculated by FDTD simulations.
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on; 07/2009