Jin Zou

Chinese Academy of Sciences, Peping, Beijing, China

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Publications (315)1539.04 Total impact

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    ABSTRACT: In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.
    Nanoscale Research Letters 12/2015; 10(1):108. DOI:10.1186/s11671-015-0812-8 · 2.52 Impact Factor
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    ABSTRACT: In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two-V/III-ratio procedure consists of a first high-V/III-ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low-V/III-ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {1 @#x0305;1 @#x0305;1 @#x0305;} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.
    Nanoscale 06/2015; DOI:10.1039/C5NR03503A · 6.74 Impact Factor
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    ABSTRACT: In this study, we demonstrated the control of crystal phase and structural quality of Au-catalyzed InAs nanowires grown on the GaAs {1 1 1}B substrates by tuning the V/III ratio in molecular beam epitaxy. It has been found that InAs nanowires can only be grown in a relatively narrow window of the V/III ratio. It is also demonstrated that the V/III ratio can be used to control the structural quality of wurtzite structured and zinc-blende structured InAs nanowires under low V/III ratios, and defect-free wurtzite structured and zinc-blende structured InAs nanowires were successfully achieved. This study provides an insight into the controlled growth of high-quality wurtzite structured and zinc-blende structured InAs nanowires through the V/III ratio engineering.
    Acta Materialia 06/2015; 92. DOI:10.1016/j.actamat.2015.03.046 · 3.94 Impact Factor
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    ABSTRACT: Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 {\mu}s and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.
    Nano Research 06/2015; DOI:10.1007/s12274-015-0833-8 · 6.96 Impact Factor
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    ABSTRACT: Metal atoms often locate in energetically favorite close-packed planes, leading to a relatively high penetration barrier for other atoms. Naturally, the penetration would be much easier through non-close-packed planes, i.e. high-index planes. Hydrogen penetration from surface to the bulk (or reversely) across the packed planes is the key step for hydrogen diffusion, thus influences significantly hydrogen sorption behaviors. In this paper, we report a successful synthesis of Mg films in preferential orientations with both close- and non-close-packed planes, i.e. (0001) and a mix of (0001) and (103), by controlling the magnetron sputtering conditions. Experimental investigations confirmed a remarkable decrease in the hydrogen absorption temperature in the Mg (103), down to 392 K from 592 K of the Mg film (0001), determined by the pressure-composition-isothermal (PCI) measurement. The ab initio calculations reveal that non-close-packed Mg(103) slab is advantageous for hydrogen sorption, attributing to the tilted close-packed-planes in the Mg(103) slab.
    Scientific Reports 06/2015; 5:10776. DOI:10.1038/srep10776 · 5.58 Impact Factor
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    ABSTRACT: In this study, the effect of substrate orientation on the structural quality of Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that the substrate orientations can be used to manipulate the nanowire catalyst composition and the catalyst surface energy and, therefore, to alter the structural quality of GaAs nanowires grown on different substrates. Defect-free wurtzite-structured GaAs nanowires grown on the GaAs (110) substrate have been achieved under our growth conditions.
    Nanotechnology 05/2015; 26(25):255601. DOI:10.1088/0957-4484/26/25/255601 · 3.67 Impact Factor
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    ABSTRACT: By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.
    Scientific Reports 05/2015; 5:10087. DOI:10.1038/srep10087 · 5.58 Impact Factor
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    ABSTRACT: Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications.
    Nano Letters 05/2015; 15(5). DOI:10.1021/acs.nanolett.5b01058 · 12.94 Impact Factor
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    ABSTRACT: Hydrogen storage is now the “bottle neck” to realize application of hydrogen as the renewable energy. The breakthrough in hydrogen storage is quite urgent. Magnesium is a promising candidate for hydrogen storage that attracts tremendous interest in last a few decades and significant progress has been made in recent years. Accordingly, in this article, we comprehensively reviewed different strategies to overcome the key barriers of high desorption temperature and low kinetics, especially on the recent approaches of nanosizing and interfacial confinement. We also try to give our own point of view on the future perspectives of research in Mg for hydrogen storage.
    Renewable and Sustainable Energy Reviews 04/2015; 44. DOI:10.1016/j.rser.2014.12.032 · 5.51 Impact Factor
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    ABSTRACT: Chiral anomaly is a non-conservation of chiral charge pumped by the topological nontrivial gauge field. As an analogy to the similar phenomenon in high-energy physics, the chiral anomaly in condensed matter is predicted to exist in the emergent quasiparticle excitations in Dirac and Weyl semimetals. However, the current understanding of such concept mostly remains in the theoretical consideration, which lacks of convincing experimental identification. Here, for the first time, we experimentally observe the existence of the chiral anomaly and the related valley transport in Cd3As2. We find that the chiral imbalance induced by external electric and magnetic fields leads to a non-zero gyrotropic coefficient {\gamma}, which can be confirmed by the field-generated Kerr effect. By applying B along the current direction, we observe a negative magnetoresistance despite the giant positive one at other directions, a clear indication of the chiral anomaly. Remarkably, a robust nonlocal response from valley diffusion originated from the chiral anomaly is observed up to room temperature when B is parallel to E. Our discovery of the chiral anomaly in Cd3As2 Dirac semimetal opens up a brand-new route to understand its fundamental properties with a controllable chiral imbalance through external fields and utilize the chiral fermions in valleytronic applications.
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    ABSTRACT: Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.
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    ABSTRACT: Large-scale Bi2Se3 nanosheets with controllable thickness have been synthesized by a microwave-assisted solvothermal method. Through detailed structural characterizations, high-quality Bi2Se3 nanosheets with average thickness of 1, 4, 7, and 13 nm have been fabricated. Their thermoelectric performance has been detailed investigated by experiments and fundamental nonparabolic Kane models. A significantly reduced thermal conductivity (only 0.41 W m-1K-1), and enhanced powder factor (4.71 × 10-4 W m-1K-2 with a Seebeck coefficient of -155.32 μV K-1 and an electrical conductivity of 1.96 × 104 S m-1) are observed in the pellet composed of single-layered Bi2Se3 nanosheets. Such an enhanced thermoelectric performance is ascribed to the broadened bandgap and optimized Fermi level in ultrathin Bi2Se3 nanosheets.
    04/2015; DOI:10.1002/aelm.201500025
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    ABSTRACT: Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.
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    ABSTRACT: In3Se4 and S-doped In3Se4 nano/micro-structures consisting of thin nanosheets have been developed as new anode materials for Li-ion batteries. Electrochemical performance measurement shows that In3Se4 nano/micro-structures deliver high discharge capacity (e.g. 651.0 mA h g-1 obtained in the 30th cycle at a current density of 50 mA g-1). Through detailed transmission electron microscopy analysis, it has been found that the electrochemical reaction mechanism is the conversion between In3Se4 and Li13In3 + LixSe. Moreover, S doping is demonstrated to be an effective approach to further improve the electrochemical performance of In3Se4 nano/micro-structures. S-doped In3Se4 nano/micro-structures achieve enhanced discharge capacity and cycling stability, with a discharge capacity of 850.6 mA h g-1 in the 30th cycle. This study demonstrates the potential of In3Se4-based nano/micro-structures as anode materials for rechargeable Li-ion batteries.
    Journal of Materials Chemistry A 03/2015; 3(14):7560-7567. DOI:10.1039/C5TA00688K · 7.44 Impact Factor
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    ABSTRACT: Fe3C-C core-shell nanoparticles were fabricated on a large scale by metal-organic chemical vapor deposition at 700 °C with ferric acetylacetonate as the precursor. Analysis results of x-ray diffraction, transmission electron microscope and Raman spectroscope showed that the Fe3C cores with an average diameter of ∼35 nm were capsulated by the graphite-like C layers with the thickness of 2-5 nm. The comparative experiments revealed that considerable Fe3O4-Fe3C core-shell nanoparticles and C nanotubes were generated simultaneously at 600 and 800 °C, respectively. A formation mechanism was proposed for the as-synthesized core-shell nanostructures, based on the temperature-dependent catalytic activity of Fe3C nanoclusters and the coalescence process of Fe3C-C nanoclusters. The Fe3C-C core-shell nanoparticles exhibited a saturation magnetization of 23.6 emu g(-1) and a coercivity of 550 Oe at room temperature.
    Nanotechnology 02/2015; 26(8):085601. DOI:10.1088/0957-4484/26/8/085601 · 3.67 Impact Factor
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    ABSTRACT: The relationship between growth kinetic and photocatalysis of SrTiO3 nanoparticles is investigated by close correlation of their growth behaviour under different stages of their growth. The detailed structural characterizations show that SrTiO3 crystal growth does not follow the classic route. A new growth mechanism, including the first formation of SrTiO3 mesoporous sphere followed by the single crystal growth via oriented attachment, size-shrinking, and Ostwald ripening, is proposed. The photocatalytic ability of the as-grown SrTiO3 products at different growth stages, checked by using methyl orange as target organic compounds, shows different properties. The results indicate that the size, morphology and defects of the resultant SrTiO3 products, tailored during the different growth stages, were highly responsible to the photocatalytic activity. Especially, the semi-crystalline SrTiO3 mesoporous spheres produced by oriented attachment at the initial stage show the highest photocatalytic ability.
    The Journal of Physical Chemistry C 02/2015; 119(7):3530-3537. DOI:10.1021/jp512448p · 4.84 Impact Factor
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    ABSTRACT: Facile and scalable fabrication of ultrafine (<5 nm) nanoparticles (NPs) as effective catalysts is a key for enhancing kinetics in application of most hydrogen storage materials (HSMs). The direct fabrication of ultrafine NPs in HSMs is obviously a challenge because of inevitable NPs agglomeration during thermo-reduction. Here, we demonstrate a mechanochemical-force-driven procedure for one-step preparing Ni NPs (~2 nm) in MgH2 matrix, which capitalizes on the in-situ bottom-up reduction of Ni-MOF-74 in the presence of MgH2 as reducing and sacrificing agent under room temperature. Both theoretical calculation and experimental investigations elucidate that ultrafine Ni NPs are much more effective on catalytic hydrogenation/dehydrogenation in Mg due to the size effect. Prospectively, our finding may facilitate the fabrication of other catalyzed HSMs by using different MOFs as catalyst precursors.
    02/2015; 3(16). DOI:10.1039/C5TA00278H
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    ABSTRACT: We report an effective and rare-earth free light conversion material synthesized via a facile fabrication route, in which organic fluorescent dyes, i.e. Rhodamine B (RhB) and fluorescein isothiocyanate (FITC) are embedded into activated boron nitride (αBN) to form a composite phosphor. The composite phosphor shows highly efficient Förster resonance energy transfer and greatly improved thermal stability, and can emit at broad visible wavelengths of 500-650 nm under the 466 nm blue-light excitation. By packaging of the composite phosphors and a blue light-emitting diode (LED) chip with transparent epoxy resin, white LED with excellent thermal conductivity, current stability and optical performance can be realized, i.e. a thermal conductivity of 0.36 W/mk, a Commission Internationale de 1'Eclairage color coordinates of (0.32, 0.34), and a luminous efficiency of 21.6 lm·W(-1). Our research opens the door toward to the practical long-life organic fluorescent dyes-based white LEDs.
    Scientific Reports 02/2015; 5:8492. DOI:10.1038/srep08492 · 5.58 Impact Factor
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    ABSTRACT: In this work, a 3D geometric electron tomography (3D-GET) approach has been developed, through which a new insight into cage-type ordered mesostructures and their pore sizes has been obtained. It is demonstrated that the accurate pore diameter, especially for cage-type cubic mesoporous materials, can only be determined through our 3D-GET approach by considering the pore geometry is a real 3D space. We use the 3D-GET method to revisit the applicability of different models for the pore size calculation in nitrogen adsorption analysis. Different from the overwhelming understanding that the nonlocal density functional theory (NLDFT) and Derjaguin-Broekhoff-de Boer (BdB) modelare recommended to calculate the pore size of cage-type cubic mesoporous materials while the Barret-Joyner-Halenda (BJH) model should not be used, a new understanding is gained through this study. The choice of a suitable model for pore size determination depends on the precise pore structure. For a cage-type cubic mesoporous material with an fcc symmetry and large entrance connecting the cages, BJH model is more accurate while the other two methods both overestimate the pore size (up to 40% higher). The DFT model is more appropriate when the pore shape is a perfect sphere than BJH and BdB model which underestimates and overestimates the pore size, respectively. It is our opinion that the unique 3D-GET approach should be used to revisit a vast number of large-pore cubic mesoporous materials to provide genuine structural information.
    Langmuir 02/2015; DOI:10.1021/la504474z · 4.38 Impact Factor
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    ABSTRACT: Developing economical and commercially available materials to replace precious and non-durable platinum based catalysts is a very important issue in contemporary fuel cell tech-nology. Nanostructured carbon materials have the potential to reduce the costs, improve the fuel tolerance and scalability; however, they are limited presently by their relatively low catalytic activity. Herein, we have synthesized a new electrocatalyst for the oxygen reduction reaction derived from in situ growth of metal–organic frameworks on carbon nanotubes, followed by pyrolysis. The most efficient catalyst yielded comparable catalytic activity than commercial platinum-based catalysts and a low Tafel slope of 49 mV dec À1 . This excellent performance is attributable to the formation of 3D structured porous and N doped carbon/carbon nanotubular composites. High surface area and continuous cata-lytic layer on graphitic carbon boosts the active sites and reactivity during electrolysis.
    Carbon 02/2015; 82. DOI:10.1016/j.carbon.2014.10.085 · 6.16 Impact Factor

Publication Stats

6k Citations
1,539.04 Total Impact Points

Institutions

  • 2008–2015
    • Chinese Academy of Sciences
      • • Institute of Metal Research
      • • Shenyang National Laboratory for Materials Science
      Peping, Beijing, China
  • 2007–2015
    • University of Queensland
      • • Centre for Microscopy and Microanalysis
      • • School of Mechanical and Mining Engineering
      • • Australian Institute for Bioengineering and Nanotechnology
      Brisbane, Queensland, Australia
    • National Institute for Materials Science
      • Global Research Center for Environment and Energy Based on Nanomaterials Science(GREEN)
      Tsukuba, Ibaraki-ken, Japan
  • 2007–2014
    • Fudan University
      • • Department of Physics
      • • Department of Chemistry
      Shanghai, Shanghai Shi, China
  • 2013
    • Zhejiang University
      • Department of Material Science and Engineering
      Hang-hsien, Zhejiang Sheng, China
  • 2011
    • IBM
      Armonk, New York, United States
  • 2007–2009
    • Australian National University
      • Department of Electronic Materials Engineering (EME)
      Canberra, Australian Capital Territory, Australia
  • 2002–2004
    • University of Sydney
      Sydney, New South Wales, Australia