Jin Zou

University of Queensland , Brisbane, Queensland, Australia

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Publications (233)1101.37 Total impact

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    ABSTRACT: Ni-assisted thermal chemical vapor deposition (TCVD) is one of the most common techniques for the growth of carbon nanofibres/nanotubes (CNFs/CNTs). However, some fundamental issues related to the catalytic growth of CNFs/CNTs, such as the low-limit growth temperature, the limiting steps and the state of Ni, are still controversial. Here, we report the growth of CNFs at 300 °C; that is the lowest temperature for the growth of CNFs by TCVD using Ni as the catalyst so far. The results showed that the Ni existed in rhombohedral Ni3C, not in the normal form of face-centered cubic Ni, and the C atoms for building the CNFs were precipitated from the (001) planes of the faceted Ni3C nanoparticles. The CNFs are believed to be formed by the decomposition-formation cycle of metastable Ni3C that has a low-limit decomposition temperature of about 300 °C. Our results strongly suggest that TCVD is a valuable tool for the synthesis of CNFs/CNTs at temperatures below 400 °C, which is generally considered as the upper-limit temperature for fabricating complementary metal oxide semiconductor devices but is the low-limit temperature for growing CNFs/CNTs by TCVD at present.
    Nanotechnology 07/2014; 25(32):325602. · 3.84 Impact Factor
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    ABSTRACT: A rationally designed two-step synthesis of silica vesicles is developed with the formation of vesicular structure in the first step and fine control over the entrance size by tuning the temperature in the second step. The silica vesicles have a uniform size of ≈50 nm with excellent cellular uptake performance. When the entrance size is equal to the wall thickness, silica vesicles after hydrophobic modification show the highest loading amount (563 mg/g) towards Ribonuclease A with a sustained release behavior. Consequently, the silica vesicles are excellent nano-carriers for cellular delivery applications of therapeutical biomolecules.
    Small 07/2014; · 7.82 Impact Factor
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    ABSTRACT: Se4+-doped cubic-structured In2O3 hierarchical nanostructures have been synthesized by controllable thermal oxidation of In3Se4 nanostructures. The synthesized nanostructures preserve the original hierarchical morphology of In3Se4 nanosheet-assembled nanostructures. Moreover, the In3Se4 single crystalline nanosheets can be transformed into Se4+-doped In2O3 polycrystalline structures consisting of interconnected nanoparticles. The photoluminescence property measurements show that the Se4+-doped In2O3 hierarchical nanostructures have red light emissions centered at 630, 670, and 770 nm and near infrared emissions centered at 910 nm, which is ascribed to the Se4+ doping.
    Journal of Materials Chemistry C. 06/2014; 2(32):6529-6535.
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    ABSTRACT: Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.
    Small 04/2014; 10(14):2747-2765. · 7.82 Impact Factor
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    ABSTRACT: Bandgap engineering is a common practice for tuning semiconductors for desired physical properties. Although possible strain effects in semiconductors have been investigated for over a half-century, a profound understanding of their influence on energy bands, especially for large elastic strain remains unclear. In this study, a systematic investigation of the transport properties of n-type [0001] ZnO nanowires was performed at room temperature using the in situ scanning tunnelling microscope-transmission electron microscope technique which shows that the transport properties vary with the applied external uniaxial strain. It has been found that the resistance of ZnO nanowires decreases continuously with increasing compressive strain, but increases under increased tensile strain, suggesting piezo-resistive characteristics. A series of near-band-edge emissions were measured and the corresponding variations of bandgaps were obtained during the application of tensile strain of individual ZnO nanowires via cathodoluminescence spectroscopy. From this, a relationship between the changes of energy bandgap and the transport properties, both induced by uniaxial strain, is built.
    Nanoscale 03/2014; · 6.23 Impact Factor
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    ABSTRACT: In-doped Bi2Se3 hierarchical nanostructures have been synthesized by an in-situ cation exchange route from their template of In3Se4 nanostructures. Through detailed structural, chemical, and morphological characterizations, it has been found that, after the cation exchange, the In-doped Bi2Se3 hierarchical nanostructures preserve the morphology of original In3Se4 thin nanosheet-assembled nanostructures, and the layer structure transforms from 7 atomic layers of Se-In-Se-In-Se-In-Se into 5 atomic layers of Se-Bi-Se-Bi-Se. The electrochemical measurements reveal that the synthesized In-doped Bi2Se3 hierarchical nanostructures show much better discharge capacity, improved cycle stability, and rate performance as an anode material for Li-ion batteries compared to its undoped counterparts.
    Journal of Materials Chemistry A: Materials for Energy and Sustainability 02/2014; 2(19):7109-7116.
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    ABSTRACT: Applying strain on semiconductors is a powerful method to modulate its electronic structures and optical properties. In this study, the behavior of liquid-nitrogen exciton emissions and the longitudinal optical phonon-exciton interactions of tensile strained [0001]-orientated ZnO whiskers were investigated using in situ cathodoluminescence spectroscopy. It has been found that, under the axial tensile strain, various exciton emissions shift to the long wavelength and their shifts have a linear relationship with the applied strain. This linear relationship and reversible shift suggest that the strain plays a dominating role in manipulating light emissions of axially strained ZnO whiskers.
    Optics Express 02/2014; 22(4):4000-5. · 3.55 Impact Factor
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    ABSTRACT: The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO 2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO 2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77 K to room temperature. V C 2014 American Vacuum Society.
    Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 02/2014; 32(02):02C111. · 1.27 Impact Factor
  • Nano Energy. 01/2014;
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    ABSTRACT: Uniform Cu-doped Bi2Te3 hexagonal nanoplates with widths of ∼200 nm and thicknesses of ∼20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Cu 2+ ions were found to substitute Bi3+ ions in the lattice. High-level Cu doping induces a lattice distortion and decreases the crystal lattice by 1.17% in the a axis and 2.38% in the c axis. A paramagnetic state is observed in these nanoplates from 2 to 295 K, which is a significant difference from their diamagnetic un-doped Bi2Te3.
    Applied Physics Letters 01/2014; 104(5):053105. · 3.79 Impact Factor
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    ABSTRACT: The long-term stability and the effect of electrolysis on the corrosion behavior of porous Ni3Al–Mo electrode obtained by reactive synthesis of Ni, Al and Mo elemental powders for hydrogen evolution reaction (HER) were investigated in 6 M KOH solution under −100 mA cm−2 current density at room temperature. The long-term operation shows that the electrochemical activity of porous Ni3Al–Mo electrode increases slightly with increasing electrolysis time. The activation of electrode relates to the removal of the existing oxidation products during sintering process. The corrosion tests show that the corrosion resistance of the porous Ni3Al–Mo electrode changes after electrolysis.
    Energy 01/2014; · 3.65 Impact Factor
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    ABSTRACT: We report the atomic-scale observation of parallel development of super elasticity and reversible dislocation-based plasticity from an early stage of bending deformation until fracture in GaAs nanowires. While this phenomenon is in sharp contrast to the textbook knowledge, it is expected to occur widely in nanostructures. This work indicates that the super recoverable deformation in nanomaterials is not simple elastic or reversible plastic deformation in nature, but the coupling of both.
    Applied Physics Letters 01/2014; 104(2):021904-021904-4. · 3.79 Impact Factor
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    ABSTRACT: In this study, enhancements of the carrier transport properties of p-type ⟨100⟩-oriented Si whiskers are observed under uniaxial tensile and compressive strains. It has been found that over 400% enhancement of electrical conductivity is achieved under a 2% tensile strain, while a 2% compressive strain can only cause ̃80% conductivity enhancement. The enhancements are mainly attributed to the breaking of the degeneracy of the v2 and v1 valence bands induced a reduction of the hole effective mass. This study provides an important insight of how the carrier mobility variation caused by the strain impact on their transport properties.
    12/2013; 104(1).
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    ABSTRACT: The thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures have been investigated. In-situ synchrotron X-ray diffraction in a sealed system reveals that In3Se4 has good thermal stability up to 900 °C. In contrast, In3Se4 has lower thermal stability up to 550 or 200 °C when heated in an atmosphere flushed with Ar or in air, respectively. The degradation mechanism was determined to be the oxidation of In3Se4 by O2 in the heating environment. This research demonstrates how thermal processing conditions can influence the thermal stability of In3Se4, suggesting that appropriate heating environment for preserving its structural integrity is required.
    Applied Physics Letters 11/2013; 103(26):263105. · 3.79 Impact Factor
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    ABSTRACT: The formation and growth of defect clusters in CeO2–M2O3 (M = La3+, Pr3+, Sm3+, Gd3+, Dy3+, Y3+, Yb3+) and CeO2–DO (N = Cd2+, Ca2+, Sr2+, Ba2+) binary solid solutions have been comparatively studied by atomistic simulations based on energy minimization of atomic interactions. The calculation ensemble, including both divalent and trivalent dopants, shows a similar energetic tendency for defect species (dopants and associated oxygen vacancies) to aggregate and grow. The dumbbell structure has been verified as a universal vacancy structure in oxygen deficient fluorite lattice. Nevertheless, it also demonstrates different tendencies of dopant–vacancy associations that depend on dopant valence and radius. The dopant is site-selective in trivalent defect clusters correlated with dopant size. While in divalent solid solutions, clusters adopt similar dopant–vacancy locations. Furthermore, all clusters in divalently doped ceria have stronger dopant–vacancy associations/interactions compared to those in trivalent ones. As a consequence, the correlation of the dopant size as well as valence effects on oxygenion conductivity has been illustrated based on an ordered defect cluster model. This study thereby offers insight into the physical picture of ionic conductivity behavior experimentally obtained in aliovalently doped ceria.
    Materials Research Bulletin. 11/2013;
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    ABSTRACT: Single-crystal tungsten nanobelts with thicknesses from tens to hundreds of nanometers, widths of several micrometers and lengths of tens of micrometers were synthesized using chemical vapor deposition. Surface energy minimization was believed to have played a crucial role in the growth of the synthesized nanobelts enclosed by the low-energy {110} crystal planes of body-centered-cubic structure. The anisotropic growth of the crystallographically equivalent {110} crystal planes could be attributable to the asymmetric concentration distribution of the tungsten atom vapor around the nanobelts during the growth process. The elastic moduli of the synthesized tungsten nanobelts with thicknesses ranging from 65 to 306 nm were accurately measured using a newly developed thermal vibration method. The measured modulus values of the tungsten nanobelts were thickness-dependent. After eliminating the effect of surface oxidization using a core-shell model, the elastic modulus of tungsten nanobelts became constant, which is close to that of the bulk tungsten value of 410 GPa.
    Nanotechnology 11/2013; 24(50):505705. · 3.84 Impact Factor
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    ABSTRACT: A new strategy to synthesize nanoparticles with enhanced cellular delivery efficiency is presented by Chengzhong Yu and co-workers on page 6233. Silica nanoparticles mimicking virus surface topography exhibit increased cellular uptake performance and improved binding capacity towards biomolecules (e.g., genetic molecules, proteins); thus the cellular delivery performance can be improved. This understanding is important in the rational design of new cellular delivery vectors for a range of bioapplications.
    Advanced Materials 11/2013; 25(43):6232. · 14.83 Impact Factor
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    ABSTRACT: Ultrafine theta-Al2O3 (θ-Al2O3) nanowires with average diameters of sub-10 nm and lengths up to several micrometers have been successfully synthesized via a novel two-stage method. With temperature gradually elevated, θ-Al2O3 was generated from the slow transformation of gamma-phase Al2O3 (γ-Al2O3), and its ultrafine nanowire structure was formed from the recrystallization of γ-Al2O3 nanowire. By means of nitrogen adsorption-desorption isotherm at 77 K and the multipoint Brunauer-Emmett-Teller (BET) method, the specific surface area of the ultrafine θ-Al2O3 nanowires is found to be up to~120 m2/g. With the high surface area, the material displays excellent gas absorption ability. Hydrogen absorption capacities could be measured to be~5.57 wt% at 77 K (liquid nitrogen), 1.51 wt% at 298 K (room temperature) and 0.81 wt% at 557 K, when a pressure of 30 atm (~3 MPa) is applied. The crystal or chemical nature of metastable θ-Al2O3 phase may play a vital role in the observed excellent gas storage capacity.
    Journal of Crystal Growth 11/2013; · 1.55 Impact Factor
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    ABSTRACT: Solid oxide fuel cells (SOFCs) directly convert fossil and/or renewable fuels into electricity and/or high-quality heat in an environmentally friendly way. However, high operating temperatures result in high cost and material issues, which have limited the commercialization of SOFCs. To lower their operating temperatures, highly active and stable cathodes are required to maintain a reasonable power output. Here, we report a layer-structured A-site deficient perovskite Sr0.95 Nb0.1 Co0.9 O3-δ (SNC0.95) prepared by solid-state reactions that shows not only high activity towards the oxygen reduction reaction (ORR) at operating temperatures below 600 °C, but also offers excellent structural stability and compatibility, and improved CO2 resistivity. An anode-supported fuel cell with SNC0.95 cathode delivers a peak power density as high as 1016 mW cm(-2) with an electrode-area-specific resistance of 0.052 Ω cm(2) at 500 °C.
    ChemSusChem 10/2013; · 7.48 Impact Factor
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    ABSTRACT: A new layer-structured rhombohedral In3Se4 crystal was synthesized by a facile and mild solvothermal method. Detailed structural and chemical characterizations using transmission electron microscopy, coupled with synchrotron X-ray diffraction analysis and Rietveld refinement, indicate that In3Se4 crystallizes in a layered rhombohedral structure with lattice parameters of a = 3.964 ± 0.002 Å and c = 39.59 ± 0.02 Å, a space group of R-3m with combining macron]m, and with a layer composition of Se–In–Se–In–Se–In–Se. The theoretical modeling and experimental measurements indicate that the In3Se4 is a self-doped n-type semiconductor. This study not only enriches the understanding on crystallography of indium selenide crystals, but also paves a way in the search for new semiconducting compounds.
    CrystEngComm 10/2013; 16(3):393-398. · 3.88 Impact Factor

Publication Stats

2k Citations
1,101.37 Total Impact Points

Institutions

  • 2007–2014
    • University of Queensland 
      • • Centre for Microscopy and Microanalysis
      • • Australian Institute for Bioengineering and Nanotechnology
      Brisbane, Queensland, Australia
  • 2013
    • Hebei University of Technology
      • School of Materials Science and Engineering
      T’ien-ching-shih, Tianjin Shi, China
  • 2011–2013
    • Central South University
      • State Key Laboratory of Powder Metallurgy
      Ch’ang-sha-shih, Hunan, China
    • University of Sydney
      • School of Aerospace, Mechanical and Mechatronic Engineering (AMME)
      Sydney, New South Wales, Australia
    • IBM
      Armonk, New York, United States
  • 2007–2013
    • National Institute for Materials Science
      • • Global Research Center for Environment and Energy Based on Nanomaterials Science(GREEN)
      • • Nanoscale Materials Center
      Tsukuba, Ibaraki-ken, Japan
  • 2012
    • Iowa State University
      • Department of Electrical and Computer Engineering
      Ames, IA, United States
    • Zhejiang University
      • Department of Material Science and Engineering
      Hangzhou, Zhejiang Sheng, China
  • 2010–2012
    • Dong-A University
      Tsau-liang-hai, Busan, South Korea
  • 2009–2012
    • University of California, Los Angeles
      • Department of Electrical Engineering
      Los Angeles, CA, United States
    • University of Cincinnati
      • Department of Physics
      Cincinnati, OH, United States
  • 2008–2012
    • Northeast Institute of Geography and Agroecology
      • • National Laboratory for Infrared Physics
      • • Institute of Metal Research
      • • Shenyang National Laboratory for Materials Science
      Beijing, Beijing Shi, China
  • 2007–2012
    • Fudan University
      • • Department of Physics
      • • Department of Chemistry
      Shanghai, Shanghai Shi, China
  • 2007–2009
    • Australian National University
      • Department of Electronic Materials Engineering (EME)
      Canberra, Australian Capital Territory, Australia