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ABSTRACT: We investigate the linearity properties of silicon modulators and show that, contrary to the traditional lithium niobate Mach-Zehnder modulators (MZMs), the third-order intermodulation distortion (IMD3) for silicon modulators is a function of the modulator bias point. The bias point for silicon modulators can be chosen to reduce the IMD3 well below that of standard lithium niobate MZMs. Given the cost and integration advantages of the silicon photonics technology, silicon modulators offer significant advantages for emerging radio over fiber applications. As an example, we examine, for the first time to our knowledge, a silicon modulator for converting analog 802.11 RF signals to the optical domain, achieving an error vector magnitude of -30 dB.
IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 3.78 Impact Factor
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ABSTRACT: We review recent advances in the development of silicon photonic integrated circuits for high-speed and high-capacity interconnect applications. We present detailed design, fabrication, and characterization of a silicon integrated chip based on wavelength division multiplexing. In such a chip, an array of eight high-speed silicon optical modulators is monolithically integrated with a silicon-based demultiplexer and a multiplexer. We demonstrate that each optical channel operates at 25 Gb/s. Our measurements suggest the integrated chip is capable of transmitting data at an aggregate rate of 200 Gb/s. This represents a key milestone on the way for fabricating terabit per second transceiver chips to meet the demand of future terascale computing.
IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 3.78 Impact Factor
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ABSTRACT: We review recent results of silicon photonic component research and photonic integration on silicon platform. In particular, we present design, fabrication, and characterization of a high-speed photonic integrated circuit that is capable of transmitting data at 200 Gb/s.
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia; 12/2008
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ABSTRACT: We report a silicon photonic integrated circuit that contains a fast silicon optical modulator array and wavelength multiplexer/de-multiplexer. We demonstrate high-speed data transmission with an aggregate data rate of 200 Gbps on a single silicon chip.
Group IV Photonics, 2008 5th IEEE International Conference on; 10/2008
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06/2008: pages 229 - 267; , ISBN: 9780470994535
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ABSTRACT: We review the recent development of a high-speed silicon optical modulator based on electric-field-induced carrier depletion effect in a silicon-on-insulator waveguide containing a reverse-biased p–n junction. The device design, fabrication and characterization are presented. To obtain efficient optical modulation, we design a sub-micrometer size silicon waveguide phase shifter based on both semiconductor device modeling and photonic circuit modeling. By employing traveling-wave drive that allows co-propagation of electrical and optical signals along the waveguide, we demonstrate a high-frequency modulator with 3 dB optical response bandwidth of 30 GHz and data transmission up to 40 Gb s−1. Such a high-speed silicon modulator will be a key component for silicon-photonic-integrated circuits for future computing I/O applications.
Semiconductor Science and Technology 05/2008; 23(6):064001. · 1.72 Impact Factor
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ABSTRACT: A monolithically integrated eight-channel optical multiplexer (Mux) with a 400 GHz channel spacing ~1550 nm is presented based on a silicon-on-insulator rib waveguide and an asymmetric Mach-Zehnder interferometer. All channels were optimized independently with integrated heaters. The fully tuned Mux shows an adjacent channel isolation of ~13 dB, an excess loss of ~2.6 dB, and a channel uniformity of ~1.5 dB over a 25 nm wavelength span. In addition, the phase tuning efficiency for different interlevel dielectric layer thicknesses and thermal crosstalk were investigated.
Optics Letters 04/2008; 33(5):530-2. · 3.40 Impact Factor
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A. Barkai, Ansheng Liu,
Daewoong Kim,
R. Cohen,
N. Elek,
Hsu-Hao Chang,
B.H. Malik,
R. Gabay,
R. Jones,
M. Paniccia,
N. Izhaky
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ABSTRACT: A low-loss polarization independent mode converter for coupling standard single mode fiber to a silicon chip is presented. For a micrometer size silicon waveguide, we demonstrate a coupling loss of 1-1.5 dB/facet.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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ABSTRACT: We review silicon photonic technologies enabling low-cost photonic integrated circuits (PIC) for future optical interconnects. In particular, we discuss design, fabrication, and characterization of a high-speed silicon optical modulator capable of transmitting data up to 30 Gbps.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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05/2007: pages 311-342;
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ABSTRACT: We present a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse biased pn junction. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3 dB bandwidth of ~20 GHz and data transmission up to 30 Gb/s. Such high-speed data transmission capability will enable silicon modulators to be one of the key building blocks for integrated silicon photonic chips for next generation communication networks as well as future high performance computing applications.
Optics Express 02/2007; 15(2):660-8. · 3.59 Impact Factor
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Graham T Reed,
Goran Z Mashanovich,
William R. Headley,
Branislav Timotijevic,
Frederic Y. Gardes,
Seong Phun Chan,
Peter Waugh,
Neil G. Emerson,
Ching Eng Png,
Mario J. Paniccia, Ansheng Liu,
Dani Hak,
Vittorio M. N. Passaro
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ABSTRACT: Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes in device and technology development. Despite early work dating back to the mid-1980s, dramatic progress has been made only in the recent years. While many approaches to research have been developed, the striking difference between the work of the early to mid-1990s, and more recent work, is that the latter has been associated with a trend to reduce the cross sectional dimensions of the waveguides that form the devices. The question arises therefore, as to whether one should move to very small strip waveguides (silicon wires) of the order of 250 nm in height and a few hundred nanometres in width for improved device performance but with little hope of polarization independence, or to utilize slightly larger rib waveguides that offer more opportunity to control the polarization dependence of the devices. In this paper, we discuss the devices suitable for one approach or the other, and present the designs associated both with strip and rib waveguides. In particular, we present the designs of polarization-independent ring resonators with free spectral ranges up to 12 nm, we propose modulators for bandwidths in the tens of gigahertz regime, and present grating-based couplers for rib and strip waveguides, and/or for wafer scale testing, as well as a novel means of developing Bragg gratings via ion implantation
IEEE Journal of Selected Topics in Quantum Electronics 12/2006; 12(6):1335-1344. · 3.78 Impact Factor
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ABSTRACT: We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.
Optics Express 07/2006; 14(15):6705-12. · 3.59 Impact Factor
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ABSTRACT: Light amplification and lasing are realized in silicon waveguides via stimulated Raman scattering. With a reverse biased p-i-n structure embedded in the waveguide, we achieve continuous-wave net gain and lasing in a single silicon chip.
Optical Fiber Communication Conference, 2006 and the 2006 National Fiber Optic Engineers Conference. OFC 2006; 04/2006
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ABSTRACT: Achieving light amplification and lasing in silicon is one of most challenging goals in silicon-based optoelectronics. As a nonlinear optical effect, stimulated Raman scattering (SRS) provides a means to generate optical gain in silicon. Recent results of a nonlinear optics approach to optical amplification and lasing in silicon at the Photonics Technology Laboratory of Intel Corporation are reviewed. This paper starts with the description of the underlying physics related to the Raman scattering in silicon and experimental results of SRS in silicon waveguides. Then, it is shown that nonlinear optical absorption associated with the two-photon absorption (TPA)-induced free carrier absorption (FCA) is a dominant loss mechanism limiting optical gain in a silicon waveguide in addition to the linear optical scattering loss due to the waveguide sidewall roughness. The design and fabrication of a low-loss silicon waveguide containing a p-i-n diode to reduce the nonlinear optical loss are described. It is demonstrated that the free carrier density inside the waveguide can be reduced significantly with a reverse bias of the p-i-n diode. As a result, net optical gain in a silicon waveguide is achieved. The design, fabrication, and characterization of a Raman silicon laser are also described. Both pulsed and continuous-wave (CW) lasing in silicon are achieved using SRS
Journal of Lightwave Technology 04/2006; · 2.78 Impact Factor
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ABSTRACT: Light amplification and lasing are realized in silicon waveguides via stimulated Raman scattering. With a reverse biased p-i-n structure embedded in the waveguide, we achieve continuous-wave net gain and lasing in a single silicon chip.
03/2006;
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ABSTRACT: With a reverse biased p-i-n structure embedded in a silicon waveguide, we efficiently reduced the nonlinear loss due to two photon absorption induced free carrier absorption and achieved continuous-wave net Raman amplification and lasing in a silicon waveguide on a single chip. The low-loss p-i-n waveguides also enabled efficient wavelength conversion in the 1550 nm band via four-wave mixing in silicon. Here we report the performance characteristics of the silicon based laser, amplifier as well as wavelength converter for different device configurations. With a pump wavelength at 1550 nm, the laser output at 1686 nm is single mode with over 55 dB side mode suppression and has less than 80 MHz linewidth. At 25V reverse bias, the threshold pump power is ~180 mW. The slope efficiency is ~4.3% for a single side output and a total output power of >10 mW can be reached at a pump power of 500 mW. The laser wavelength can be tuned by adjusting the wavelength of the pump laser. A 3 dB on-chip amplification and -8.5 dB wavelength conversion efficiency is achieved in an 8-cm long waveguide at a pump powers of < 640 mW. We demonstrate that a high-speed pseudo-random bit sequence optical data at 10 Gb/s rate can be amplified or converted to a new wavelength channel with clear open eye diagram and no waveform distortion.© (2006) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
02/2006;
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ABSTRACT: Efficient wavelength conversion via four-wave-mixing in silicon-on-isolator p-i-n waveguides has been realized. By reverse biasing the p-i-n diode structure formed along the silicon rib waveguide, the nonlinear absorption due to two photon absorption induced free carrier absorption is significantly reduced, and a wavelength conversion efficiency of -8.5 dB has been achieved in an 8 cm long waveguide at a pump intensity of 40 MW/cm2. A high-speed pseudo-random bit sequence data at 10 Gb/s rate is converted to a new wavelength channel in the C-band with clear open eye diagram and no waveform distortion. Conversion efficiency as functions of pump power, wavelength detuning, and bias voltages, have been investigated. For shorter waveguides of 1.6 cm long, a conversion bandwidth of > 30 nm was achieved.
Optics Express 02/2006; 14(3):1182-8. · 3.59 Impact Factor
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ABSTRACT: The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and 3 dB extinction ratio (ER), and the second having reduced voltage swing (1.3 V single-ended swing) while achieving an open eye at 4 Gb/s. The speed, power, and ER data collected are used to build a quantitative discussion of the challenges in achieving a power-efficient free-carrier modulator at bit rates above 1 Gb/s.
Journal of Lightwave Technology 01/2006; 23(12):4305- 4314. · 2.78 Impact Factor
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ABSTRACT: We demonstrate a novel 75-MHz optical modulator in an SOI waveguide. Modeling of the p-i-n shows device speed is limited by decreasing internal resistance of the p-i-n due to two-photon generated free carriers.
Group IV Photonics, 2005. 2nd IEEE International Conference on; 10/2005
