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ABSTRACT: Electrical transport studies across nm-thick dielectric films can be complicated, and datasets compromised, by local electrical breakdown enhanced by nm-sized features. To avoid this problem we need to know the minimal voltage that causes the enhanced electrical breakdown, a task that usually requires numerous measurements and simulation of which is not trivial. Here we describe and use a model system, using a "floating" gold pad to contact Au nanoparticles, NPs, to simultaneously measure numerous junctions with high aspect ratio NP contacts, with a dielectric film, thus revealing the lowest electrical breakdown voltage of a specific dielectric-nanocontact combination. For a 48 ± 1.5 Å SiO(2) layer and a ∼7 Å monolayer of organic molecules (to link the Au NPs) we show how the breakdown voltage decreases from 4.5 ± 0.4 V for a flat contact, to 2.4 ± 0.4 V if 5 nm Au NPs are introduced on the surface. The fact that larger Au NPs on the surface do not necessarily result in significantly higher breakdown voltages illustrates the need for combining experiments with model calculations. This combination shows two opposite effects of increasing the particle size, i.e., increase in defect density in the insulator and decrease in electric field strength. Understanding the process then explains why these systems are vulnerable to electrical breakdown as a result of spikes in regular electrical grids. Finally we use XPS-based chemically resolved electrical measurements to confirm that breakdown occurs indeed right below the nm-sized features.
Nanoscale 04/2012; 4(10):3128-34. · 5.91 Impact Factor
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Hagay Shpaisman,
Oliver Seitz,
Omer Yaffe,
Katy Roodenko,
Luc Scheres,
Han Zuilhof,
Yves J. Chabal,
Tomoki Sueyoshi,
Satoshi Kera,
Nobuo Ueno,
Ayelet Vilan,
David Cahen
Chemical science (Royal Society of Chemistry) 01/2012; 3:851. · 7.53 Impact Factor
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ABSTRACT: One of the major problems in molecular electronics is how to make electronically conducting contact to the “soft” organic and biomolecules without altering the molecules. As a result, only a small number of metals can be applied, mostly by special deposition methods with severe limitations. Transferring a predefined thin metal leaf onto a molecular layer provides a nondestructive, noninvasive contacting method that is, in principle, applicable to many types of metal and a variety of metal/molecules combinations. Here we report a modification of our earlier lift-off, float-on (LOFO) method, using as a basis its offspring, the polymer-assisted lift-off (PALO) method, where a backing polymer enables simultaneous deposition of multiple contacts as well as reduces wrinkles in the thin metal leaf. The modified PALO (MoPALO) method, reported here, adds lithography steps to obviate the need to punch through the polymer, as is done to complete PALO contacts. Morphological characterization of the electrodes indicates highly uniform, wrinkle-free contacts of negligible roughness. The good electrical performance of the MoPALO contacts was proven with metal/organic-monolayer/semiconductor (MOMS) junctions, which are known to be very sensitive to molecular degradation and metal penetration. We also show how MoPALO contacts enabled us to compare the effect of varying the metal work function and contact area on the current−voltage characteristics of MOMS devices.
07/2010;
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Advanced Functional Materials 06/2010; 20(13):2181 - 2188. · 10.18 Impact Factor
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Omer Yaffe,
Luc Scheres,
Sreenivasa Reddy Puniredd,
Nir Stein,
Ariel Biller,
Rotem Har Lavan, Hagay Shpaisman,
Han Zuilhof,
Hossam Haick,
David Cahen,
Ayelet Vilan
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ABSTRACT: Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise
Nano Letters 05/2009; 9(6):2390-2394. · 13.20 Impact Factor
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Omer Yaffe,
Luc Scheres,
Sreenivasa Reddy Puniredd,
Nir Stein,
Ariel Biller,
Rotem Har Lavan, Hagay Shpaisman,
Han Zuilhof,
Hossam Haick,
David Cahen,
Ayelet Vilan
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ABSTRACT: Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
04/2009;
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ABSTRACT: We report on electronic transport measurements through dense monolayers of CH3(CH2)nPO3H2 molecules of varying chain lengths, with a strong and stable bond through the phosphonic acid end group to a <100> GaAs surface and a Hg top contact. The monolayers maintain their high quality during and after the electrical measurements. Analyses of the electronic transport measurements of junctions, and of UV and inverse photoemission spectroscopy data on band alignments of free surfaces, yield insight about the electrical transport mechanism. Transport characteristics for n-GaAs junctions at low forward bias are identical for different chain lengths, a strong indication of high-quality monolayers. Tunneling barrier and carrier effective mass values for n- and p-GaAs samples were deduced from the transport data. In this way we find a tunneling barrier for n-GaAs of 1.3 eV, while UPS data for the lowest unoccupied system orbital (LUSO) point to a 2.4 eV barrier. This discrepancy can be understood by invoking states, closer to the Fermi level than the LUSO state, that contribute to charge transport. Such states lead to a manifold of transitions, each having a different probability, both because of differences in the tunnel barrier and because of differences in density of these interface-induced states; i.e., the single barrier, deduced from J−V measurements, is an effective value only.
02/2009;
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ABSTRACT: Temperature-dependent transport measurements through alkyl chain monolayers that are directly chemically bound to Si, show that the currents decrease as the temperature increases. We relate this temperature dependence primarily to a gradual un-tilting of the adsorbed molecules, which leads to increasing of the film thickness, resulting in a wider tunnel barrier. Following that, we conclude that a significant part of transport through these alkyl chain monolayers occurs “through space”. The experimental finding and its interpretation result from the high reproducibility and accuracy of the transport results for the semiconductor/alkyl chain/ metal junctions that we study.
02/2008;
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ABSTRACT: Because conventional photovoltaic (PV) cells are threshold systems in terms of optical absorption, “photon management“is an obvious way to improve their performance.Calculations to optimize photon utilization in a single-junction PV cell show ˜1.4 eV to be the optimal bandgap for terrestrial solar to electrical power conversion. For Si, with a slightly sub-optimal gap, continuous efforts have yielded single-junction laboratory cells, quite close to the theoretical limit.One of the repeatedly proposed directions to improve photon management is that of up- and down-conversion of photon energy. In up-conversion two photons with energy hv < EG (the band gap) create one photon with hv > EG, while in down-conversion one photon with energy hv > 2EG, yields two photons with energy hv > EG.Multi-exciton generation (MEG), although not a "photon management" process, can achieve effects like down-conversion, which, though, is more limited than MEG. In MEG one photon with energy hv > nEG yields n electron-hole pairs with energy EG. Because MEG has clear advantages over down-conversion, in the following we will, instead of considering both, consider MEG.We find that a straightforward analysis of this approach to “photon management” for a single junction cell under the detailed balance limit shows clearly that, even if we assume (highly unrealistic) 100% efficient up-conversion and MEG, a new theoretical PV conversion limit of 49 %, instead of 31% is arrived at, a maximum possible gain of ≈60%. The main attractive feature of the combination of up-conversion and MEG is a significant broadening of the optimal band-gap range. Rough estimates for the very highest possibly feasible efficiencies for up-conversion and MEG (25% and 70% respectively), yield at most slightly less than 40% PV conversion efficiency, i.e., only a ˜25% gain over conventional single band gap semiconductor.These results show that up-conversion or MEG are fascinating scientific areas of research, whose implementation can indeed improve PV cell performance. However, truly formidable challenges need to be met to have UC + MEG lead to the type of radical decrease in the (cost)/ (efficiency × lifetime × yield) ratio that we need to allow large-scale economic introduction of PV cells. Parallel pursuit of alternative approaches to improved photon management, such as, for example, lowering the costs of arrangements with multiple solar absorbers and/or multi-junction systems, appears, therefore, critical for the future of PV.
MRS Proceedings. 12/2007; 1101.
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Journal of the American Chemical Society 02/2007; 129(4):734-5. · 9.91 Impact Factor
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Fabrice Amy,
Calvin K Chan,
Wei Zhao,
Jaehyung Hyung,
Masaki Ono,
Tomoki Sueyoshi,
Satoshi Kera,
Guy Nesher,
Adi Salomon,
Lior Segev,
Oliver Seitz, Hagay Shpaisman,
Achim Schöll,
Marc Haeming,
Till Böcking,
David Cahen,
Leeor Kronik,
Nobuo Ueno,
Eberhard Umbach,
Antoine Kahn
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ABSTRACT: Monolayers of alkyl chains, attached through direct Si-C bonds to Si(111), via phosphonates to GaAs(100) surfaces, or deposited as alkyl-silane monolayers on SiO2, are investigated by ultraviolet and inverse photoemission spectroscopy and X-ray absorption spectroscopy. Exposure to ultraviolet radiation from a He discharge lamp, or to a beam of energetic electrons, leads to significant damage, presumably associated with radiation- or electron-induced H-abstraction leading to carbon-carbon double-bond formation in the alkyl monolayer. The damage results in an overall distortion of the valence spectrum, in the appearance of (occupied) states above the highest occupied molecular orbital of the alkyl molecule, and in a characteristic (unoccupied state) pi resonance at the edge of the carbon absorption peak. These distortions present a serious challenge for the interpretation of the electronic structure of the monolayer system. We show that extrapolation to zero damage at short exposure times eliminates extrinsic features and allows a meaningful extraction of the density of state of the pristine monolayer from spectroscopy measurements.
The Journal of Physical Chemistry B 12/2006; 110(43):21826-32. · 3.70 Impact Factor
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ABSTRACT: Photon up-conversion (UC) and photon-induced multiple-exciton generation (MEG) are proposed directions that are of increasing interest for improving photovoltaic (PV) conversion efficiencies via “photon (or light) management”. Straightforward analysis of these approaches for non-concentrated single-junction cells in the detailed balance limit yields a theoretical PV conversion limit of 49%, instead of 31% without UC and MEG. With what we estimate to be optimistic, maximal realistic efficiencies (25% for UC; 70% for MEG) this limit becomes <40%, i.e., ∼1.25 times the theoretical efficiency of conventional single-band gap cells. While this result does not detract from the fascinating fundamental scientific challenge to make UC and MEG simple and cheap ways to improve PV, such reality checks should be considered when evaluating the short-term promises of these and other options, such as spectral splitting and tandem arrangements.
Solar Energy Materials and Solar Cells.
