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ABSTRACT: We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate
for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed.
The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V
materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication
process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid
silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light
sources. For the external signal processing, Mach–Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited,
3dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5Vmm. The successful implementation of quantum well
intermixing technique opens up the possibility to realize multiple III–V bandgaps in this platform. Sampled grating DBR devices
integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are
1520, 1440 and 1480nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally
and theoretically. An overall characteristic temperature (T
0) of 51°C, an above threshold characteristic temperature (T
1) of 100°C, and a thermal impedance (Z
T
) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry–Perot devices. Scaling
this platform to larger dimensions is demonstrated up to 150mm wafer diameter. A vertical outgassing channel design is developed
to accomplish high-quality III–V epitaxial transfer to silicon in a timely and dimension-independent fashion.
Applied Physics A 04/2012; 95(4):1045-1057. · 1.63 Impact Factor
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ABSTRACT: We demonstrate an integrated triplexer on silicon with a compact size of 1mm by 3.5mm by utilizing a selective area wafer bonding technique. The wavelength demultiplexer on the triplexer chip successfully separates signals at wavelengths of 1310 nm, 1490 nm and 1550 nm with more than 10 dB extinction ratio. The measured 3 dB bandwidth of the integrated laser and photodetectors are 2 GHz and 16 GHz, respectively. Open eye diagrams are also measured for the integrated photodetector up to 12.5 GHz PRBS inputs.
Optics Express 11/2010; 18(23):23891-9. · 3.59 Impact Factor
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ABSTRACT: We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.
Optics Express 01/2010; 18(2):1070-5. · 3.59 Impact Factor
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ABSTRACT: A compact electrically-pumped hybrid silicon microring laser is realized on a hybrid silicon platform. A simplified, self-aligned, deep-etch process is developed to result in low-loss resonator with a high quality factor Q≫15,000. Small footprint (resonator diameter=50 µm), electrical and optical losses all contribute to lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. Outcoupling- and bus waveguide width-dependent studies are conducted for optimizing device structure. A simple qualitative study in current-voltage (IV) characteristic shows that dry etching through active region leads to ≪3× more leakage current at the same reverse bias than wet etch counterpart. It indicates a relatively good interface with tolerable surface recombination from deep dry etch. The spectrum is single mode with large extinction ratio (≫40 dB) and small linewidth (≪0.04 nm) observed. The unique bistability operation in ring resonator structure is also demonstrated.
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia; 12/2009
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ABSTRACT: We demonstrate a traveling-wave Mach-Zehnder silicon evanescent modulator that implements a slotline design for the electrodes. The device has a modulation efficiency of 1.6 V-mm and modulation bandwidth of 20 GHz.
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on; 10/2009
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ABSTRACT: We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 microm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 degrees C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective.
Optics Express 10/2009; 17(22):20355-64. · 3.59 Impact Factor
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ABSTRACT: The silicon evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
IEEE Journal of Selected Topics in Quantum Electronics 07/2009; · 3.78 Impact Factor
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ABSTRACT: We demonstrate a carrier depletion phase modulator based on the hybrid silicon evanescent platform. A low temperature and robust bonding process is employed to transfer III-V epitaxial layers to patterned silicon waveguides. An external electric field is applied across the doped multiple quantum wells so that carriers are depleted, resulting in an index change. The device has a voltage-length product, V <sub>pi</sub> L, of 4 V-mm at 1550 nm. An optical bandwidth of 100 nm with an extinction ratio over 10 dB is achieved. The device can handle optical power up to 28 mW.
IEEE Photonics Technology Letters 01/2009; · 2.19 Impact Factor
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ABSTRACT: We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation.
Optics Express 01/2009; 16(25):20571-6. · 3.59 Impact Factor
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ABSTRACT: We review a range of modulators on silicon from groups around the world. We describe in detail high frequency, high power electroabsorption and Mach-Zehnder modulators on silicon waveguides with low drive voltages.
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the; 12/2008
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ABSTRACT: We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.
IEEE Photonics Technology Letters 11/2008; · 2.19 Impact Factor
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ABSTRACT: We demonstrate a 10 Gb/s Mach-Zehnder silicon evanescent modulator utilizing coplanar waveguide design. The device has a modulation efficiency of 1.5 V-mm and modulation bandwidth of 8 GHz.
Group IV Photonics, 2008 5th IEEE International Conference on; 10/2008
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ABSTRACT: A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGaInAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth of 10 GHz. The modulator has a clean open eye at 10 Gb/s with sub-volt drive.
Optics Express 07/2008; 16(13):9936-41. · 3.59 Impact Factor
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ABSTRACT: We demonstrate a phase modulator based on carrier depletion on the hybrid silicon evanescent platform. The device has a modulation efficiency of 4 V mm, along with a bandwidth of 100 nm and power capability up to 20 mW.
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 06/2008
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ABSTRACT: We report an electrically pumped distributed feedback silicon evanescent laser. The laser operates continuous wave with a single mode output at 1600 nm. The laser threshold is 25 mA with a maximum output power of 5.4 mW at 10 degrees C. The maximum operating temperature and minimum line width of the laser are 50 degrees C, and 3.6 MHz, respectively.
Optics Express 04/2008; 16(7):4413-9. · 3.59 Impact Factor
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ABSTRACT: A new way to make high speed modulators using Si waveguides is demonstrated. The hybrid silicon evanescent electroabsorption modulator with offset AlGalnAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth over 16 GHz.
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on; 03/2008
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ABSTRACT: An overview is given of the hybrid AlGaInAs-silicon platform where InP active and silicon passive components are integrated using wafer bonding. Hybrid optical amplifiers and lasers demonstrate the functionality this platform bring silicon photonics.
Optical Fiber communication/National Fiber Optic Engineers Conference, 2008. OFC/NFOEC 2008. Conference on; 03/2008
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ABSTRACT: We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.
Optics Express 11/2007; 15(21):13539-46. · 3.59 Impact Factor
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ABSTRACT: We demonstrate a mode locked silicon evanescent laser (ML-SEL) which generates a 39.2 GHz pulse stream without requiring any RF drive signal. This passively mode locked laser outputs 3.7 ps pulses which are nearly transform limited and have 18 dB extinction ratio.
Group IV Photonics, 2007 4th IEEE International Conference on; 10/2007
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ABSTRACT: Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated.
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on; 09/2007
