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Seung Wook Ryu,
Ho-Ki Lyeo,
Jong Ho Lee,
Young Bae Ahn,
Gun Hwan Kim,
Choon Hwan Kim,
Soo Gil Kim, Se-Ho Lee,
Ka Young Kim,
Jong Hyeop Kim,
Won Kim,
Cheol Seong Hwang,
Hyeong Joon Kim
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ABSTRACT: This study examined the various physical, structural and electrical properties of SiO(2) doped Ge(2)Sb(2)Te(5) (SGST) films for phase change random access memory applications. Interestingly, SGST had a layered structure (LS) resulting from the inhomogeneous distribution of SiO(2) after annealing. The physical parameters able to affect the reset current of phase change memory (I(res)) were predicted from the Joule heating and heat conservation equations. When SiO(2) was doped into GST, thermal conductivity largely decreased by ∼ 55%. The influence of SiO(2)-doping on I(res) was examined using the test phase change memory cell. I(res) was reduced by ∼ 45%. An electro-thermal simulation showed that the reduced thermal conductivity contributes to the improvement of cell efficiency as well as the reduction of I(res), while the increased dynamic resistance contributes only to the latter. The formation and presence of the LS thermal conductivity in the set state test cell after repeated switching was confirmed.
Nanotechnology 06/2011; 22(25):254005. · 3.98 Impact Factor
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ABSTRACT: We report the synthesis and characterization of phase-change Ge-Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb > or = 86 at. %) eutectic Ge-Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge-Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge-Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge-Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed.
Nano Letters 05/2009; 9(5):2103-8. · 13.20 Impact Factor
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ABSTRACT: By combining electron microscopy and size-dependent electrical measurements, we demonstrate surface-induced heterogeneous nucleation-dominant mechanism for recrystallization of amorphous phase-change Ge2Sb2Te5 nanowires. Heterogeneous nucleation theory quantitatively predicts the nucleation rates that vary by 5 orders of magnitude from 190 to 20 nm lengthscales. Our work demonstrates that increasing the surface-to-volume ratio of nanowires has two effects: lowering of the activation energy barrier due to phonon instability and providing nucleation sites for recrystallization. The systematic study of the effect of surface in phase-change behavior is critical for understanding nanoscale phase-transitions and design of nonvolatile memory devices.
Nano Letters 10/2008; 8(10):3303-9. · 13.20 Impact Factor
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ABSTRACT: Phase-change memory, which switches reversibly between crystalline and amorphous phases, is promising for next generation data-storage devices. In this work, we present a novel, nonbinary data-storage device using core-shell nanowires to significantly enhance memory capacity by combining two phase-change materials with different electronic and thermal properties to engineer different onsets of amorphous-crystalline transitions. Electric-field induced sequential amorphous-crystalline transition in core-shell nanowires displays three distinct electronic states with high, low, and intermediate resistances, assigned as data "0", "1", and "2".
Nano Letters 08/2008; 8(7):2056-62. · 13.20 Impact Factor
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ABSTRACT: We demonstrate a general approach for growing vertically aligned, single-crystalline nanowires of any material on arbitrary substrates by using plasma-sputtered Au/Pd thin films as a catalyst through the vapor-liquid-solid process. The high-energy sputtered Au/Pd atoms form a reactive interface with the substrate forming nanoclusters which get embedded in the substrate, thus providing mechanical stability for vertically aligned nanowire growth. We demonstrate that our approach for vertically aligned nanowire growth is generic and can be extended to various complex substrates such as conducting indium tin oxide.
Nano Letters 06/2008; 8(5):1328-34. · 13.20 Impact Factor
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ABSTRACT: The search for a universal memory storage device that combines rapid read and write speeds, high storage density and non-volatility is driving the exploration of new materials in nanostructured form. Phase-change materials, which can be reversibly switched between amorphous and crystalline states, are promising in this respect, but top-down processing of these materials into nanostructures often damages their useful properties. Self-assembled nanowire-based phase-change material memory devices offer an attractive solution owing to their sub-lithographic sizes and unique geometry, coupled with the facile etch-free processes with which they can be fabricated. Here, we explore the effects of nanoscaling on the memory-storage capability of self-assembled Ge2Sb2Te5 nanowires, an important phase-change material. Our measurements of write-current amplitude, switching speed, endurance and data retention time in these devices show that such nanowires are promising building blocks for non-volatile scalable memory and may represent the ultimate size limit in exploring current-induced phase transition in nanoscale systems.
Nature Nanotechnology 10/2007; 2(10):626-30. · 27.27 Impact Factor
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ABSTRACT: Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials
Journal of the American Chemical Society 12/2006; 128(43):14026-7. · 9.91 Impact Factor
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ABSTRACT: Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as 0.42 mA for a 28 nm nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.
Applied Physics Letters 11/2006; 89(22):223116-223116-3. · 3.84 Impact Factor
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ABSTRACT: Laterally driven microresonators were used to estimate the temperature-dependent elastic modulus of single-crystalline Si for microelectromechanical systems (MEMS). The resonators were fabricated through surface micromachining from silicon-on-glass wafers. They were moved laterally by alternating electrostatic force at a series of frequencies, and then a resonance frequency was determined, under temperature cycling in the range of 25°C to 600°C, by detecting the maximum displacement. The elastic modulus was obtained in the temperature range by Rayleigh's energy method from the detected resonance frequency. At this time, the temperature dependency of elastic modulus was affected by surface oxidation as well as its intrinsic variation: a temperature cycle permanently reduces the resonance frequency. The effect of Si oxidation was analyzed for thermal cycling by applying a simple composite model to the measured frequency data; here the oxide thickness was estimated from the difference in the resonance frequency before and after the temperature cycle, and was confirmed by field-emission scanning electron microscopy. Finally, the temperature coefficient of the elastic modulus of Si in the <110> direction was determined as -64×10<sup>-6</sup>[°C<sup>-1</sup>]. This value was quite comparable to those reported in previous literatures, and much more so if the specimen temperature is calibrated more exactly.
Journal of Microelectromechanical Systems 09/2003; · 2.10 Impact Factor
