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T. V. Kulevoy,
G. N. Kropachev,
D. N. Seleznev,
P. E. Yakushin, R. P. Kuibeda,
A. V. Kozlov,
V. A. Koshelev,
A. Hershcovitch,
V. I. Gushenets,
B. M. Johnson,
E. M. Oks,
S. M. Polozov,
H. J. Poole
[show abstract]
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ABSTRACT: A joint research and development of steady state intense boron ion sources for 100’s of electron‐volt ion implanters has been in progress for the past five years. Current density limitation associated with extracting and transporting low energy ion beams result in lower beam currents that in turn adversely affects the process throughput. The transport channel with electrostatic lenses for decaborane (B10H14) and carborane (C2B10H12) ion beams transportation was developed and investigated. The significant increase of ion beam intensity at the beam transport channel output is demonstrated. The transport channel simulation, construction and experimental results of ion beam transportation are presented.
AIP Conference Proceedings. 01/2011; 1321(1):476-479.
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ABSTRACT: The ribbon ion sources for ion implantation are under developing in ITEP during last 5 years. The several ver-sions of Bernas ion source are used for ribbon ion beam production. The beam transport for low energy ribbon beam is one of main problems for ion implantation. The progress in ion sources and transport lines development is dis-cussed in this paper. The new results for carboran clusters ion beam driving are presented. PACS: 29.25.Ni, 61.72.Tt.
Series: Nuclear Physics Investigations. 01/2010; 3:177-179.
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A Hershcovitch,
B M Johnson,
V A Batalin,
G N Kropachev, R P Kuibeda,
T V Kulevoy,
A A Kolomiets,
V I Pershin,
S V Petrenko,
I Rudskoy, [......],
A S Bugaev,
V I Gushenets,
I V Litovko,
E M Oks,
G Yu Yushkov,
E S Masunov,
S M Polozov,
H J Poole,
P A Storozhenko,
A Ya Svarovski
[show abstract]
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ABSTRACT: For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.
Review of Scientific Instruments 03/2008; 79(2 Pt 2):02C507. · 1.37 Impact Factor
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T V Kulevoy,
S V Petrenko, R P Kuibeda,
D N Seleznev,
V A Koshelev,
A V Kozlov,
Yu B Stasevich,
A L Sitnikov,
I M Shamailov,
V I Pershin,
A Hershcovitch,
B M Johnson,
V I Gushenets,
E M Oks,
H P Poole,
E S Masunov,
S M Polozov
[show abstract]
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ABSTRACT: The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bernas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.
Review of Scientific Instruments 03/2008; 79(2 Pt 2):02C501. · 1.37 Impact Factor
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I Roudskoy,
T V Kulevoy,
S V Petrenko, R P Kuibeda,
D N Seleznev,
V I Pershin,
A Hershcovitch,
B M Johnson,
V I Gushenets,
E M Oks,
H P Poole
[show abstract]
[hide abstract]
ABSTRACT: As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.
Review of Scientific Instruments 03/2008; 79(2 Pt 2):02B313. · 1.37 Impact Factor
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[show abstract]
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ABSTRACT: A joint research and development program is underway to investigate beam transport systems for intense steady-state ion sources for ion implanters. Two energy extremes of MeV and hundreds of eV are investigated using a modified Bernas ion source with an indirectly heated cathode. Results are presented for simulations of electrostatic systems performed to investigate the transportation of ion beams over a wide mass range: boron to decaborane.
Review of Scientific Instruments 04/2006; · 1.37 Impact Factor
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A. Hershcovitch,
V. A. Batalin,
A. S. Bugaev,
V. I. Gushenets,
B. M. Johnson,
A. A. Kolomiets,
G. N. Kropachev, R. P. Kuibeda,
T. V. Kulevoy,
I. V. Litovko, [......],
E. M. Oks,
V. I. Pershin,
S. V. Petrenko,
S. M. Polozov,
H. J. Poole,
I. Rudskoy,
D. N. Seleznev,
P. A. Storozhenko,
A. Ya. Svarovski,
G. Yu. Yushkov
[show abstract]
[hide abstract]
ABSTRACT: A joint research and development effort whose ultimate goal is to develop steady-state intense ion sources to meet the needs of the two energy extremes of ion implanters (mega-electron-volt and of hundreds of electron-volt) has been in progress for the past two years. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MeV linear accelerator is used for acceleration of a few milliamperes. It is desirable to have instead an intense, high charge state ion source on a relatively low-energy platform (dc acceleration) to generate high-energy ion beams for implantation. This endeavor has already resulted in very high steady-state output currents of higher charge states antimony and phosphorous ions. Low-energy ion implantation is performed presently by decelerating high-energy extracted ions. Consequently, output currents are low due to space charge problems. Contamination is also a problem due to gases and plasmas employed to mitigate the space charge issues. Our efforts involve molecular ions and a plasmaless/gasless deceleration method. A program overview is presented in this article. Although source specifics are described in accompanying papers, only this article contains our most recent results.
Review of Scientific Instruments 03/2006; 77(3):03B510-03B510-5. · 1.37 Impact Factor
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T. V. Kulevoy, R. P. Kuibeda,
S. V. Petrenko,
V. A. Batalin,
V. I. Pershin,
G. N. Kropachev,
A. Hershcovitch,
B. M. Johnson,
V. I. Gushenets,
E. M. Oks,
H. J. Poole
[show abstract]
[hide abstract]
ABSTRACT: A joint research and development program is underway to develop steady-state intense ion sources for the two energy extremes of MeV and hundreds of eV. For the MeV range the investigations were focused on charge-state enhancement for ions generated by the modified Bernas ion sources. Based on the previously successful ITEP experience with the e-metal vapor vacuum arc ion source [e.g.,
Batalin et al., Rev. Sci. Instrum. 75, 1900 (2004)
], the injection of a high-energy electron beam into the Bernas ion source discharge region is expected to enhance the production of high charge states. Presented here are construction details and studies of electron-beam influence on the enhancement of ion-beam charge states generated by the modified Bernas ion source.
Review of Scientific Instruments 03/2006; 77(3):03C110-03C110-3. · 1.37 Impact Factor
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T. V. Kulevoy,
S. V. Petrenko, R. P. Kuibeda,
V. A. Batalin,
V. I. Pershin,
A. V. Koslov,
Yu. B. Stasevich,
A. Hershcovitch,
B. M. Johnson,
E. M. Oks,
V. I. Gushenets,
H. J. Poole,
P. A. Storozhenko,
E. L. Gurkova,
O. V. Alexeyenko
[show abstract]
[hide abstract]
ABSTRACT: A joint research and development program is under way to develop steady-state intense ion sources for the two energy extremes of MeV and hundreds of eV. The difficulties of extraction and transportation of low-energy boron beams are investigated using a decaborane compound [
I. Yamada, W. L. Brown, J. A. Northby, and M. Sosnowski, Nucl. Instrum. Methods Phys. Res. B 79, 223 (1993)
]. Presented here are the results from ITEP experiments using the Bernas ion source with an indirectly heated LaB6 cathode.
Review of Scientific Instruments 02/2006; 77(3):03C102-03C102-3. · 1.37 Impact Factor
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V. A. Batalin,
A. S. Bugaev,
V. I. Gushenets,
A. Hershcovitch,
B. M. Johnson,
A. A. Kolomiets, R. P. Kuibeda,
B. K. Kondratiev,
T. V. Kulevoy,
I. V. Litovko,
E. M. Oks,
V. I. Pershin,
H. J. Poole,
S. V. Petrenko,
D. N. Seleznev,
A. Ya. Svarovski,
V. I. Turchin,
G. Yu. Yushkov
[show abstract]
[hide abstract]
ABSTRACT: A joint research and development effort whose ultimate goal is to develop an intense, high charge state, ion source for mega-electron-volt ion implanters has been initiated. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with radio frequency (rf) accelerators. Usually, a MeV Linear Accelerator (MV LINAC) is used for acceleration of a few milliamperes. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform [direct current (dc) acceleration] to generate high-energy ion beams for implantation. This endeavor is a continuation of earlier research, which resulted in generating ions like Pb+7 and Bi+8 and ion currents exceeding 200 mA. The natural next step is to convert and optimize ion charge state enhancement techniques to generate B, P, As, and Sb ions, and adapt them to a dc implanter. A number of schemes are to be pursued simultaneously. The most promising approach is to be developed into a commercial ion source. © 2004 American Institute of Physics.
Review of Scientific Instruments 05/2004; 75(5):1900-1903. · 1.37 Impact Factor
