P. Azadfar

Islamic Azad University Karaj Branch, Leredi, Alborz, Iran

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Publications (2)0.71 Total impact

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    ABSTRACT: In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at various ion beam fluency varied from 10$^{16}$ to 10$^{18}$ ions/cm$^2$ and the results are investigated. Si$_3$N$_4$ film with orthorhombic structure is formed on silicon surface with cubic structure while the lattice parameter of the generated layer is not affected by change of nitrogen ion beam dose. RMS roughness of implanted samples increases by increasing the nitrogen dose, specially when the dose is more than 3$\times$10$^{17}$ ions/cm$^2$. Surface resistivity of samples is increased by increasing the dose of ion beam. Although changes in the transmission of implanted samples does not differ very much in comparison with row sample but reflection of implanted samples decrease about 60% for the electromagnetic wave in the range of 200 to 1500 nm. Absorption coefficient of samples is obtained and the band gap energy of samples is calculated. It is observed that formation of defect levels changes the magnitude of band gap energy.
    The European Physical Journal Applied Physics 05/2008; · 0.71 Impact Factor
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    ABSTRACT: Carbon dioxide ions with 29keV energy were implanted into (400) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1×1016 and 3×1018ions/cm2. X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.
    Applied Surface Science - APPL SURF SCI. 01/2008; 255(5):2180-2184.