Publications (5)1.46 Total impact
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Article: High‐speed and low‐noise AlInN/GaN HEMTs on SiC
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ABSTRACT: A comparison of devices with different source–drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic capacitance. Our devices feature an fT of 188 GHz and fMAX of 200 GHz, which is the highest fMAX ever achieved to date for AlInN-based HEMTs. At 10 (20) GHz, our HEMTs exhibit a low minimum noise figure Fmin of 0.62 (1.5) dB together with a high associated gain GA of 15.4 (13.3) dB. These Fmin values are among the lowest reported for deep submicrometer GaN HEMTs, and the GA are the best values so far in the literature, demonstrating the tremendous potential of AlInN/GaN HEMTs for microwave low-noise applications.Physica Status Solidi (A) Applications and Materials 10/2010; 208(2):429 - 433. · 1.46 Impact Factor -
Article: Exact determination of electrical properties of wurtzite Al1− xIn xN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation
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ABSTRACT: This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance–voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6 × 1013 cm−2 for lattice-matched (LM) heterostructures and barrier thickness of 14 nm, beyond 2 A/mm saturation currents, above 100 GHz operation for heterostructures grown on Si (111) with gate length of 0.1 µm. Despite these striking experimental results, a consistent determination of the most important electrical parameters, namely polarization sheet charge density, surface potential, and dielectric constant of the alloy are still missing. By setting up the correct charge balance equation, these parameters can unambiguously be determined. For instance, in the case of nearly LM Al0.85In0.15N these parameters amount to σAl0.85In0.15N/GaN ~ 3.7 × 1017 m−2, eΦS ~ 3 eV and Al0.85In0.15N ~11.2, for the charge density, the surface barrier potential, and the dielectric constant, respectively.International Journal of Microwave and Wireless Technologies 01/2010; 2(01):13 - 20. -
Article: Polarization field mapping of AlInN/AlN/GaN heterostructure
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Article: High-mobility AlGaN/GaN two-dimensional electron gas grown on (111) single crystal diamond substrate
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Article: 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz
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ABSTRACT: Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as high as f(T) = 102 GHz, which is the highest value reported so far for nitride-based devices on silicon substrates, as well as for any AlInN/GaN-based HEMT regardless of substrate type. Continuous-wave power measurements in class-A operation at 10 GHz with V-DS = 15 V revealed a 19-dB linear gain, a maximum output power density of 2.5 W/mm with an similar to 23% power-added efficiency (PAE), and a 9-dB large-signal gain. At VDS = 8 V, the output power is 1 W/mm, and the peak PAE reaches 50%. Results demonstrate the interest of AlInN/GaN on silicon HEMT technology for low-cost millimeter-wave and high-power applications.
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Institutions
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2010
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École Polytechnique Fédérale de Lausanne
- Institut de physique de la matière condensée
Lausanne, VD, Switzerland
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