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D Seleznev,
G Kropachev, A Kozlov,
R Kuibeda,
V Koshelev,
T Kulevoy,
A Hershcovitch,
B Jonson,
J Poole,
O Alexeyenko,
E Gurkova,
E Oks,
V Gushenets,
S Polozov,
E Masunov
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ABSTRACT: A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C(2)B(10)H(12)) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.
The Review of scientific instruments 02/2010; 81(2):02B901. · 1.52 Impact Factor
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ABSTRACT: Since 2008 the ion beam irradiation modeling experiments for the testing of reactor materials radiation hardness are under development at the ITEP heavy ion RFQ injector with MEVVA ion source. Ion beam irradiation method has certain advantages for such tests. One of them is high speed of defect formation. Moreover, the irradiated samples can be investigated by traditional investigation methodic because they have not radioactivity induced. The special sample support with electrostatic deflector was constructed and installed at the injector output. The result of ion beam dynamics simulation throughout the deflector as well as the detailed description of the test facility is presented. The first experimental results are presented as well. They have been demonstrated promising results.
The Review of scientific instruments 02/2010; 81(2):02B906. · 1.52 Impact Factor
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ABSTRACT: The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.
The Review of scientific instruments 02/2010; 81(2):02B905. · 1.52 Impact Factor
