Publications (2)0 Total impact
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Conference Proceeding: Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations
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ABSTRACT: We have clarified the difference in NBTI and 1/f noise of high-k/metal gate pMOSFETs between (110) and (100) oriented surfaces. Although the initial interface state density on (110) is higher than that on (100), the NBTI is better on the (110) surface. That is due to the different interface defect nature of interface defect states on (110) surface compared to (100). This difference has a strong impact on 1/f noise.VLSI Technology, 2008 Symposium on; 07/2008 -
Conference Proceeding: A proposal of new concept milli-second annealing: Flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for fabrication of ultra shallow junction with improvement of metal gate high-k CMOS performance
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ABSTRACT: We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mu<sub>eff</sub>) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mu<sub>eff</sub> without deactivation and diffusion.VLSI Technology, 2008 Symposium on; 07/2008
