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ABSTRACT: The authors present coplanar integrated directional couplers for
90 and 180 GHz with a 60 GHz (120 GHz) bandwidth and up to 20 dB
directivity. A three-dimensional (3-D) field simulator has been used to
calculate the complex propagation constants and the impedances of the
two modes. For the first time, the comparison of simulated and measured
S-parameters up to 230 GHz shows the validity of the design approach and
the capability of integrated coplanar couplers
IEEE Microwave and Guided Wave Letters 09/1999;
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ABSTRACT: A low-cost 94-GHz monolithically integrated coplanar FMCW radar
chip has been developed, using 0.15-μm AlGaAs-InGaAs-GaAs PM-HEMT
technology. The chip includes a VCO, electrically tunable over several
gigahertz, transmit and receive amplifiers, a mixer, and a directional
coupler. The monolithic microwave integrated circuits (MMICs) are as
small as 8 mm<sup>2</sup>, delivering up to 10 mW of radio frequency
(RF) power at a DC power consumption of 0.7 W. The receiver noise figure
is 6-7 dB, and the conversion gain is 10 dB
IEEE Microwave and Guided Wave Letters 03/1999;
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O. Wohigemuth,
B. Agarwal,
R. Pullela,
D. Mensa,
Q. Lee,
J. Guthrie,
M. J. W. Rodwell,
R. Reuter,
J. Braunstein,
M. Schlechtweg, T. Krems,
K. Kohler
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ABSTRACT: We present an integrated circuit, based on nonlinear transmission lines (NLTL), for network analysis within 70-200 GHz. This is the first integrated circuit containing all elements of a S-Parameter test set: A multiplier to generate the RF signal, couplers to separate the incident and reflected waves, and a pair of high speed sampling circuits for down-converting the signals to lower frequencies.
Microwave Conference, 1998. 28th European; 11/1998
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O. Wohlgemuth,
B. Agarwal,
R. Pullela,
D. Mensa,
Q. Lee,
J. Guthrie,
M.J.W. Rodwell,
R. Reuter,
J. Braunstein,
M. Schlechtweg, T. Krems,
K. Kohler
[show abstract]
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ABSTRACT: This paper presents an integrated circuit, based on nonlinear
transmission lines (NLTL), for a vector network analyzer system (VNA)
within 50-200 GHz. It is the first integrated circuit containing all
elements of an S-parameter test set: a multiplier to generate the RF
signal, directional couplers to separate the incident and reflected
waves, and a pair of high speed sampling circuits to convert the signals
down to lower frequencies,
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on; 10/1998
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ABSTRACT: The properties of coplanar transmission lines (CPWs) and -filters
on polycrystalline diamond substrates are investigated over the
frequency range from 1-120 GHz. Experimental results obtained for
different geometries are in good agreement with theoretical predictions.
Coplanar transmission line technology was applied to flip-chip diamond
substrates for power amplifier MMICs
Microwave Symposium Digest, 1998 IEEE MTT-S International; 07/1998
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ABSTRACT: The impact of the packaging configuration on cross talk and feed
back effects caused by parasitic substrate modes is investigated for
coplanar millimeter-wave circuits. It is demonstrated theoretically and
by means of several circuit examples that both the mounting
configuration and the thickness of the semiconductor substrate of
coplanar MIMICs have to be chosen appropriately, in order to avoid
circuit degradation or even failure
Microwave Symposium Digest, 1998 IEEE MTT-S International; 07/1998
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ABSTRACT: A W-band variable gain amplifies MMIC with 37 dB gain at 94 GHz
and a gain control range of over 70 dB has been developed. The circuit
consists of four dual-gate HEMT stages, using a 0.15 μm
AlGaAs-InGaAs-GaAs PM-HEMT technology. The chip was realized in coplanar
technology and requires an area of only 1×3 mm<sup>2</sup>. The
resulting power gain density is 12 dB/mm<sup>2</sup> at 94 GHz
Microwave Symposium Digest, 1998 IEEE MTT-S International; 07/1998
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ABSTRACT: Power leakage into surface waves in monolithically integrated
millimeter-wave circuits is to a great extent determined by the applied
packaging technology. In this presentation it is shown that properly
designed flip chip packages will not suffer from surface wave leakage.
Coplanar waveguides on GaAs substrates are used to demonstrate the
decisive differences in the leakage behavior of flip chip mounted MMICs
and more conventional MMW packages, featuring surface mounted MMICs
connected by wire bonds. All results are based on full wave spectral
domain analysis and measurement data in the frequency range from 10 to
120 GHz
Microwave Symposium Digest, 1997., IEEE MTT-S International; 07/1997
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ABSTRACT: Integrated transmit and receive MMICs for automotive applications
have been realized in coplanar waveguide technology, using a 0.15 μm
PHEMT process. The transmitter chip delivers an output power of 10 dBm
at the antenna and the LO-ports. The receiver has an overall conversion
gain of 10 dB for an LO-power of -10 dBm. Both chips only require an
area of 3×2 mm<sup>2</sup> For an improved higher power version of
the transmitter, a new nonlinear HEMT-model has been used for the design
of a power amplifier, resulting in excellent agreement between predicted
and measured output performance at 76 GHz
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE; 07/1997
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ABSTRACT: Integrated transmit and receive MMICs for automotive applications have been realized in coplanar waveguide technology, using a 0.15 μm PHEMT process. The transmitter chip delivers an output power of 10 dBm at the antenna and the LO-ports. The receiver has an overall conversion gain of 10 dB for an LO-power of -10 dBm. Both chips only require an area of 3×2 mm<sup>2</sup>. For an improved higher power version of the transmitter, a new nonlinear HEMT-model has been used for the design of a power amplifier, resulting in excellent agreement between predicted and measured output performance at 76 GHz
Microwave Symposium Digest, 1997., IEEE MTT-S International; 07/1997
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W.H. Haydl,
L. Verweyen,
T. Jakobus,
M. Neumann,
A. Tessmann, T. Krems,
M. Schlechtweg,
W. Reinert,
H. Massier,
J. Rudiger,
W. Bronner,
A. Hulsmann,
T. Fink
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ABSTRACT: Fully integrated W-band 94 GHz heterodyne receivers in coplanar
0.15 μm AlGaAs/InGaAs/GaAs PM-HEMT technology are described. The
MMICs consist of a multistage low noise RF amplifier, a mixer, and an LO
buffer amplifier. Balanced diode and single ended resistive HEMT mixers
were investigated. A conversion gain of 13 dB and a DSB noise figure of
6.5 dB were obtained with a very compact 1×4 mm<sup>2</sup> front
end MMIC, employing cascode amplifiers and balanced rat race diode
mixer. The chip size is substantially less than that of any receiver
chip published to date
Microwave Symposium Digest, 1997., IEEE MTT-S International; 07/1997
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ABSTRACT: The electrical properties of uniform coplanar lines on GaAs have been investigated, using a finite element simulator. Experimental results, extracted from on-wafer measurements to 120 GHz, are in good agreement with the simulated results. Frequency dependent models were developed for all characteristic parameters of the coplanar lines, such as impedance, effective relative dielectric constant and attenuation, describing the behavior of coplanar lines of different geometries over the entire frequency range from 0-120 GHz. Similarly, exact models applicable over the same frequency range have been developed for a number of coplanar elements, such as air bridges, 90 degree corners and probing pads. These models have been implemented in our HP-MDS data base, resulting in accurate designs of a number of millimeter wave circuits.
Microwave Conference, 1996. 26th European; 10/1996
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ABSTRACT: In this paper, we report on coplanar branch-line and rat-race couplers on GaAs for use in balanced mixers, investigated theoretically and experimentally over the frequency range from DC to 120 GHz. For optimum spurious response suppression at the IF-port of a balanced mixer, a coupler must provide the required phase delay at its ports feeding the non-linear devices. Whereas in microstrip (MS) technology these types of couplers have been extensively investigated in the past, coplanar waveguide (CPW) technology is still lacking similar broadband models, making millimetre-wave circuit design difficult. For the characteristic impedance levels 30, 50 and 67 ¿, a model library was developed for transmission lines and line elements like air bridges and corners, and implemented into HP-MDS. On the basis of these models, we designed a branch-line coupler, a capacitively loaded branch-line coupler and a rat-race coupler for W-band applications. For the analysis of the phase relation between the different ports of these hybrids, 2-port test structures were designed and processed. The 'on-wafer' measured S-parameters of the couplers show excellent agreement with the simulated data in both amplitude and phase over the entire frequency range.
Microwave Conference, 1996. 26th European; 10/1996
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ABSTRACT: The performances of two different interconnection techniques for
coplanar MMICs, wire bonding and flip chip, are investigated at
millimeter-wave frequencies. By developing an accurate model for the
interconnections, which is validated with experimental data up to 120
GHz, the limitations with respect to frequency and interconnection
distance of either technique are pointed out, yielding useful data for
the design of hybrid MMW-subsystems
Microwave Symposium Digest, 1996., IEEE MTT-S International; 07/1996
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ABSTRACT: An investigation of bond wire interconnections for coplanar
integrated millimeter-wave circuits is presented. Assuming a
transmission line behaviour of the bond wire its characteristic
impedance and propagation constant are calculated using two dimensional
finite element simulations. The model is validated by comparison with
experimental data and then used to estimate the maximum length for bond
wires in millimeter-wave applications. Bond wire matching networks are
introduced giving a broadband improvement in the behaviour of
interconnections with long wires
Electrical Performance of Electronic Packaging, 1995; 11/1995