S. Jackett-Murphy

Publications (2)0 Total impact

• Conference Proceeding: Low dose SIMOX and impact of ITOX process on quality of SOI film

  W.P. Maszara, J. Bennett, T. Boden, R. Dockerty, C.F.H. Gondran, S. Jackett-Murphy, P.K. Vasudev, M.J. Anc, H. Hovel
  [show abstract] [hide abstract]
  ABSTRACT: Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm^-2) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have investigated low dose SIMOX material and the impact of its high temperature annealing as well as the subsequent ITOX process on structure and electrical properties of its SOI film. Several new findings about the SOI film quality and its relationship to process parameters are reported
  SOI Conference, 1997. Proceedings., 1997 IEEE International; 11/1997
• Conference Proceeding: Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing

  W.P. Maszara, C.F.H. Gondran, S. Jackett-Murphy, P.K. Vasudev, S.S. Iyer, M.J. Anc
  [show abstract] [hide abstract]
  ABSTRACT: We have conducted an investigation to evaluate the impact of both touch-polish and hydrogen annealing at different temperatures on the roughness, on the SOI film removal, as well as the impact of so processed surface on the integrity of gate oxide thermally grown on it, for SIMOX and BESOI material
  SOI Conference, 1997. Proceedings., 1997 IEEE International; 11/1997