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ABSTRACT: The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small linewidths as low as 2.3 meV. Blueshifts of the NW emission energy between 25 and 56 meV with respect to bulk InP are related to radial carrier confinement in nanowires with diameters between 15 and 50 nm. Time resolved investigations reveal a low surface recombination velocity of 6×102 cm/s and indicate thermally activated nonradiative surface recombination above approximately 20 K.
Applied Physics Letters 08/2007; 91(9):091103-091103-3. · 3.84 Impact Factor
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ABSTRACT: We report time-resolved photoluminescence investigations of as-grown wurtzite InP nanowires (dav=16 nm) on a (111) silicon substrate as a function of emission energy, temperature, and excitation fluence. The observed luminescence transients are well described by a biexponential decay process, with τfast∼0.3–0.7 ns and τslow∼2–5 ns, which does not originate from band bending induced by surface states. The trends associated with the decay characteristics instead point to size-dependent localization effects in the narrow nanowires.
Phys. Rev. B. 77(23).
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ABSTRACT: We present optical studies of single InP nanowires. The nanowires show small emission linewidths as low as 2.3 meV and a low surface recombination velocity. HF passivation results in a strong increase of PL intensity.
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International;
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ABSTRACT: We report the effect of varying the MOCVD gas precursor V/lll ratios on the structural and optical properties of InP nanowires grown on (111)Si susbstrates. We show record narrow photoluminescence linewidths for optimal ratios.
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International;
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ABSTRACT: We experimentally determined critical diameters (CDs) of epitaxial nanowires (NWs) grown on lattice-mismatched substrates by MOCVD. The CD was found to be inversely dependent on lattice mismatch. For InP NWs on Si, quantization effect and narrow linewidth were observed for the micro-photoluminescence (mu-PL) measurement.
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International;
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ABSTRACT: We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International;
