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ABSTRACT: 40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.
Optics Express 05/2012; 20(10):10591-6. · 3.59 Impact Factor
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ABSTRACT: We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.
Optics Express 01/2012; 20(2):1096-101. · 3.59 Impact Factor
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ABSTRACT: 10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.
Optics Express 07/2011; 19(15):14690-5. · 3.59 Impact Factor
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ABSTRACT: A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength of 1.55 microm and a low dark current density of 60 mA/cm(2). At a wavelength of 1.52 microm, a responsivity of 1 A/W is obtained under -0.5 V bias. The process is fully compatible with CMOS technology.
Optics Express 05/2009; 17(8):6252-7. · 3.59 Impact Factor
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Laurent Vivien,
Mathieu Rouvière,
Jean-Marc Fédéli,
Delphine Marris-Morini,
Jean François Damlencourt,
Juliette Mangeney, Paul Crozat,
Loubna El Melhaoui,
Eric Cassan,
Xavier Le Roux,
Daniel Pascal,
Suzanne Laval
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ABSTRACT: We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.
Optics Express 08/2007; 15(15):9843-8. · 3.59 Impact Factor
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04/2005; , ISBN: 9780471654506
