L. Goldhammer

Publications (3)0 Total impact

• Article: High energy proton radiation damage to (AlGa)As-G aAs solar cells

  R. Loo, L. Goldhammer, S. Kamath, R. C. Knechtli
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  ABSTRACT: Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.
  07/1979;
• Article: High energy proton radiation damage to (AlGa)As-GaAs solar cells. Final report, 23 Nov 1976 - 15 Oct 1977

  R. Loo, L. Goldhammer, S. Kamath, R.C. Knechtli
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  ABSTRACT: Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.
  05/1979;
• Article: Electron and proton degradation in /AlGa/As-GaAs solar cells

  R. Loo, R. C. Knechtli, G. S. Kamath, L. Goldhammer, B. Anspaugh
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  ABSTRACT: Results on radiation damage in (AlGa)As-GaAs solar cells by 1 MeV electron fluences up to 10 to the 16th electrons/sq cm and by 15, 20, 30 and 40 MeV proton fluences up to 5 times 10 to the 11th protons/sq cm are presented. The damage is compared with data on state-of-the-art silicon cells which were irradiated along with the gallium arsenide cells. The theoretical expectation that the junction depth has to be kept relatively shallow, to minimize radiation damage has been verified experimentally. The damage to the GaAs cells as a function of irradiation, is correlated with the change in their spectral response and dark I-V characteristics. The effect of thermal annealing on the (AlGa)As-GaAs solar cells was also investigated. This data is used to predict further avenues of optimization of the GaAs cells.
  02/1978;