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ABSTRACT: In this paper we present the first complex mixed-signal FinFET circuit (>1500 devices). Design and implementation aspects as well as measurement results of a 10-bit current- steering D/A converter are shown. The achieved performance proves the ability of recent FinEET technology to realize competitive mixed-signal circuits with large device count and wide range of device dimensions. Moreover the promising matching and analog behavior of FinFETs enables reduced circuit area compared to planar designs.
SOI Conference, 2008. SOI. IEEE International; 11/2008
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M. Fulde,
A. Heigl,
M. Weis,
M. Wimshofer, K.V. Arnim,
T. Nirschl,
M. Sterkel,
G. Knoblinger,
W. Hansch,
G. Wachutka,
D. Schmitt-Landsiedel
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ABSTRACT: We present fabrication, optimization and application aspects of complementary Multiple-Gate Tunneling FETs (MuGTFETs). Tunneling FETs are implemented in a MuGFET technology for the first time. N- and p-type tunneling currents are observed within a single device structure. Digital and analog device performance is analyzed. Measured devices show low on currents in the tens of nA regime due to not optimized doping profiles. However, promising analog characteristics are obtained with intrinsic gain of more than 300 for 65 nm channel length devices. The scaling potential of multi-gate tunneling FETs is proven by measurements and device simulations that reveal a low dependence of the device characteristics on the channel length. The devices feature low temperature dependence and competitive matching behavior. A new voltage reference circuit is proposed as potential application for the MuGTFET.
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International; 04/2008
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M. Fulde, K.v. Arnim,
C. Pacha,
F. Bauer,
C. Russ,
D. Siprak,
W. Xiong,
A. Marshall,
C.R. Cleavelin,
K. Schruefer,
D. Schmitt-Landsiedel,
G. Knoblinger
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ABSTRACT: In this paper recent advances in Multi-Gate MOS-FET (MuGFET) circuit design are reported. The feasibility of essential parts of low-power mobile SoC applications and large scale integration capability is shown. Excellent short channel control enables undoped metal gate MuGFETs to outperfom their planar counterparts in terms of delay-leakage trade-off. Superior voltage scaling efficiency and competitive performance is demonstrated for a product typical critical path. Design and layout optimization for improved SRAM cell stability is shown. Beneficial analog performance is exemplary demonstrated for an OpAmp. A potential degradation of ADC performance due to transient VT mismatch is shown, the use of redundancy is proposed as countermeasure. Key RF building blocks are presented, MuGFET specific design issues are outlined. A comparison of different ESD elements yields a potential ESD protection scheme combining planar and MuGFET devices.
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on; 01/2008
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ABSTRACT: Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and Vt stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO<sub>2</sub> dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient Vt instabilities in the range of 10 mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.
33rd European Solid State Circuits Conference, 2007. ESSCIRC; 10/2007
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G. Knoblinger,
C. Pacha,
F. Kuttner,
A. Marshall,
C. Russ,
P. Haibach,
P. Patruno,
T. Schulz, K.V. Arnim,
J.P. Engelstaedter,
L. Bertolissi,
W. Xiong,
C.R. Cleavelin,
K. Schruefer
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ABSTRACT: In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European; 10/2006
