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ABSTRACT: Permanent Single Event Functional Interrupts (SEFIs) have been
observed in several high density Synchronous Dynamic Random Access
Memories (SDRAMs). Affected devices often lose both Read and Write
functions
Radiation Effects Data Workshop, 2001 IEEE; 02/2001
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ABSTRACT: We have devised ways to measure the SEE sensitivity of plastic-encapsulated, high-density DRAMs with the use of limited-range heavy ions. The sensitivity at low LET regions is verified using a few species of ions with a long range
Radiation Effects Data Workshop, 2001 IEEE; 02/2001
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ABSTRACT: The single event transient (SET) sensitivity of a radiation
hardened voltage comparator type with vertical input transistors is
compared with that observed for a COTS device type made up of lateral
transistors. The cause of the difference in sensitivity is investigated
Radiation Effects Data Workshop, 2000; 02/2000
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ABSTRACT: It has been observed that the 68302 microprocessor, which is being
flown on several space vehicles, has not shown signs of experiencing
either single event latchup (SEL) or single event snapback (SES) as
would have been predicted using ground-based test data. This study
presents the comparison of the flight to ground data
Radiation Effects Data Workshop, 2000; 02/2000
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ABSTRACT: Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.
IEEE Transactions on Nuclear Science 01/2000; · 1.45 Impact Factor
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ABSTRACT: this paper, the authors extend the data base for 240 new parts, arranged according to technology, function and manufacturer in order to identify trends and data gaps. The compilation of data are presented in tables very similar to those of previous compendia. However, a separate column is now provided to highlight response, by listing the LET threshold in units of and the device cross section. The listed cross section is not always tied so closely to a fixed beam ion LET as that for soft errors. Thus it should be regarded as only representative. In earlier papers, these data were listed in the "Remarks" column when known. It should be emphasized that these data are new. For a compendium of all existing SEE data, one needs to use this paper in conjunction with references 1 through 6. Older data are, of course, less likely to describe present day device response-- even those taken for the same manufacturer and number. The best data is that taken for devices of the same well-defined lot; a rarity in this era of widespread use of commercial devices. The experimental procedures, such as those used by JPL and The Aerospace Corporation, are evolutionary and are described in detail from time to time in December issues of IEEE Transactions on Nuclear Science (7,8) or in house reports. In general, procedures comply with the updated guideline for SEE testing set forth by the ASTM F1.11 document (9). This paper summarizes soft error and experimental test data of 1995 and 1996 from the Jet Propulsion Laboratory The Aerospace Corporation (A), the Goddard Space Flight Center and others. Not included are data sets on power transistor burnout and single event gate rupture reported by JPL in 1994 (10) and updated (1 1), which require a more complicated format, The most recent 1997 data...
02/1999;
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ABSTRACT: SEU sensitivity of microcircuits to relativistic heavy ions is
compared to that measured with low energy ions of comparable LET values.
Multiple junction charge collection in a complex circuit seems to mask
the effect of varying charge generations due to different ion track
structures. Heavy ions at sub-relativistic speeds may generate nuclear
fragments, sometimes resulting in SEUs
IEEE Transactions on Nuclear Science 01/1999; · 1.45 Impact Factor
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ABSTRACT: Two generations of the 80Cx86 microprocessor family and two
floating-point digital signal processor (DSP) of the SMJ320Cx0 family
were tested for single event effects (SEE). The test results are
presented here
Radiation Effects Data Workshop, 1998. IEEE; 08/1998
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ABSTRACT: A comparison of single event upset and latchup test results for devices operated at several bias levels, from 2.5 V to 6 V, is reported. Vulnerability to SEU increased with decreasing bias, whereas the opposite pattern was observed for SEL. The relationship between threshold SEU vulnerability and bias is not regular, which precludes the use of simple prediction schemes for obtaining the expected vulnerability at 3.3 V from existing 5 V data.
01/1998;
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ABSTRACT: The single event upset (SEU) sensitivity of certain types of
linear microcircuits is strongly affected by bias conditions. For these
devices, a model of upset mechanism and a method for SEU control have
been suggested
IEEE Transactions on Nuclear Science 01/1998; · 1.45 Impact Factor
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ABSTRACT: The single event functional interrupt (SEFI) sensitivity of
several types of microcircuits is measured with heavy ions. While simple
microcircuits have not been affected by SEFI, many complex microcircuits
are vulnerable to it in varying degrees. Although there are many causes
for SEFIs, ion irradiation testing in conjunction with an understanding
of device architecture helps refine techniques which can be used to
lessen the ill effects caused by SEFI
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on; 10/1997
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ABSTRACT: A study was done of Single Event Upset (SEU) in pulse width
modulation (PWM) controllers which feature either soft start or shutdown
circuits. Upsets occurring in the soft start circuit of these devices
may greatly effect the external circuit depending on the configuration
of the PWM
Radiation Effects Data Workshop, 1997 IEEE; 08/1997
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ABSTRACT: A seventh set of heavy ion single event effects (SEE) test data
have been collected since the last IEEE publications. SEE trends are
indicated for several functional classes of ICs
Radiation Effects Data Workshop, 1997 IEEE; 08/1997
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ABSTRACT: SEE testing was performed on pulse width modulation (PWM)
controllers which are commonly used in switching mode power supply
systems. The devices are designed using both Set-Reset (SR) flip-flops
and Toggle (T) flip-flops which are vulnerable to single event upset
(SEU) in a radiation environment. Depending on the implementation of the
different devices the effect can be significant in spaceflight hardware
IEEE Transactions on Nuclear Science 01/1997; · 1.45 Impact Factor
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ABSTRACT: Digital signal processors (DSPs) sensitive to SEE may be utilized
in some space-borne systems, in which the effects of cosmic-rays and
trapped protons are limited. Thorough ground testing for SEE is
essential in designing an SEE tolerant system, with a minimized risk
factor
IEEE Transactions on Nuclear Science 01/1997; · 1.45 Impact Factor
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ABSTRACT: High and low resistive load versions of Micron Technology's
MT5C1008C (128K×8) and MT5C2561C (256K×1) SRAMs were tested
for SEU vulnerability. Contrary to computer simulation results, SEU
susceptibility decreased with increasing resistive load. A substantially
larger number of multiple-bit errors was observed for the low resistive
load SRAMs, which also exhibited a “1”→“0”
to “0”→“1” bit error ratio close to unity;
in contrast, the high resistive load devices displayed a pronounced
error bit polarity effect. Two distinct upset mechanisms are proposed to
account for these observations
IEEE Transactions on Nuclear Science 07/1996; · 1.45 Impact Factor
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ABSTRACT: This paper presents single event upset (SEU) and latchup test
results for selected Emitter Coupled Logic (ECL) microcircuits,
including several types of low capacity SRAMs and other memory devices.
The high speed of ECL memory devices makes them attractive for use in
space applications. However, the emitter coupled transistor design
increases susceptibility to radiation induced functional errors,
especially SEU, because the transistors are not saturated, unlike the
transistors in a CMOS device. Charge collection at the sensitive nodes
in ECL memory elements differs accordingly. These differences are
responsible, in part, for the heightened SEU vulnerability of ECL memory
devices relative to their CMOS counterparts
IEEE Transactions on Nuclear Science 01/1996; · 1.45 Impact Factor
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ABSTRACT: Presents the results of an investigation of the SMU (single-word
multiple-bit upset) vulnerability of a number of high density SRAM
(static random-access memory) device types. The primary objectives of
this study were to examine the extent of SMUs in SRAMs, determine design
characteristics that predispose devices to this type of upset, and
investigate SMU mitigation techniques applicable to space-based
electronic systems. The results reported suggest that a nonnegligible
SMU rate can be expected for most high-density SRAM types when exposed
to the space radiation environment. However, the range of SMU rates is
also very large, suggesting that careful selection of device types
should be emphasized during the design phase. Furthermore,
susceptibility to SEU is not necessarily a reliable indicator of SMU
vulnerability. A more important determinant, in many cases, is the
architecture of the device, especially the physical separation between
logically adjacent cells. It is therefore inappropriate to consider SEU
(single event upset) studies to be a proxy for SMU investigations
IEEE Transactions on Nuclear Science 01/1994; · 1.45 Impact Factor
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ABSTRACT: Selected analog devices were tested for heavy-ion-induced single
event upset (SEU). The results of these tests are presented, likely
upset mechanisms are discussed, and standards for the characterization
of analog upsets are suggested. The OP-15 operational amplifier, which
was found to be susceptible to SEU in the laboratory, has also
experienced upset in space. Possible strategies for mitigating the
occurrence of analog SEUs in space are also discussed
IEEE Transactions on Nuclear Science 01/1994; · 1.45 Impact Factor
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ABSTRACT: The occurrence of single ion induced multiple-bit upset in
IDT71256 256K SRAMs was investigated using high energy heavy ions, with
special attention to upsets affecting bits within the same logical
memory word
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on; 10/1993
