K. W. Rhee

Publications (3)1.04 Total impact

• Article: Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

  T. R. Stevenson, W.-T. Hsieh, M. J. Li, D. E. Prober, K. W. Rhee, R. J. Schoelkopf, C. M. Stahle, J. Teufel, E. J. Wollack
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  ABSTRACT: For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.
  05/2004;
• Article: Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography

  T.R. Stevenson, Wen-Ting Hsieh, M.J. Li, K.W. Rhee, R.J. Schoelkopf, C.M. Stahle, J.D. Teufel
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  ABSTRACT: This paper describes the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-mm wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper describes how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.
  IEEE Transactions on Appiled Superconductivity 07/2003; · 1.04 Impact Factor
• Article: Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

  T. R. Stevenson, W.-T. Hsieh, M. J. Li, C. M. Stahle, K. W. Rhee, J. Teufel, R. J. Schoelkopf
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  ABSTRACT: This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.
  02/2002;