Publications (3)2.19 Total impact
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Article: Electrooptical sampling using 1.55-μm self-seeded semiconductor laser with soliton pulse compression
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ABSTRACT: We report on a compact, reliable and easy to use electrooptic sampling system based on a self-seeded semiconductor laser having a temporal resolution of <1 ps and a shot noise limited sensitivity of 1 mV. With an operating wavelength of 1.55 /spl mu/m and 0.5-ps time jitter of the optical source, it is particularly suited for ultrahigh-speed devices and integrated circuits. For demonstration, results for an ultrafast metal-semiconductor-metal photodetector are presented.IEEE Photonics Technology Letters 09/1999; · 2.19 Impact Factor -
Conference Proceeding: Low jitter dual semiconductor laser system using electrical phase shift for fast temporal scanning in time-resolved pump and probe experiments
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ABSTRACT: Numerous important ultrafast measurement techniques such as electro-optical and photoconductive sampling are based on a pump and probe arrangement which requires a precisely adjustable time delay for short optical pulses. In order to overcome the relatively slow scanning speed of mechanical delay units alternative approaches using dual laser systems with rapid scanning capability have been investigated. Here, we report on a scanning dual laser system (SDLS) providing optical pulses for time-resolved pump and probe experiments with a freely adjustable temporal scanning range and high scanning speed. Compared to previously published results of 5.4-ps rms timing jitter between two fiber-lasers the described system has a pulse jitter of <1.5-ps rms without further electronic stabilizationLasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on; 02/1999 -
Conference Proceeding: Advanced semiconductor laser based electro-optical sampling systemusing soliton pulse compression for direct probing at 1.55-μmwavelength
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ABSTRACT: We report on a compact, reliable and easy to use electro-optic sampling (EOS) system with high temporal resolution, and increased voltage sensitivity. With an operating wavelength of 1.55 μm and subpicosecond time jitter of the optical source, it is particularly suited for characterizing ultrafast long-wavelength photodetectors and receivers as well as electrically synchronized ultrahigh-speed devices and ICsLasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE; 01/1999
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Institutions
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1999
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Technische Universität Berlin
- Department of solid state Physics
Berlin, Land Berlin, Germany
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