G.-R. Zhou

Publications (9)3.59 Total impact

• Source

  Available from: Matthew Grein

  Article: CMOS-compatible dual-output silicon modulator for analog signal processing.

  S J Spector, M W Geis, G-R Zhou, M E Grein, F Gan, M A Popovic, J U Yoon, D M Lennon, E P Ippen, F Z Kärtner, T M Lyszczarz
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  ABSTRACT: A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.
  Optics Express 07/2008; 16(15):11027-31. · 3.59 Impact Factor
• Conference Proceeding: High-speed silicon electro-optical modulator that can be operated in carrier depletion or carrier injection mode

  S.J. Spector, M.W. Geis, M.E. Grein, R.T. Schulein, J.U. Yoon, D.M. Lennon, F. Gan, G.-R. Zhou, F.X. Kaertner, T.M. Lyszczarz
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  ABSTRACT: A high-speed silicon optical modulator has been demonstrated which can operate either in forward bias using carrier injection, or in reverse bias using carrier depletion. In forward bias, the device requires less than 10 mW of drive power, but has a low bandwidth of 100 MHz. In reverse bias, the device has a nearly flat response to 18 GHz, but requires 700 mW for large modulation depths.
  Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 06/2008
• Conference Proceeding: Modeling and characterization of Mach-Zehnder silicon electro-optical modulators

  G.-R. Zhou, M.W. Geis, S.J. Spector, F. Gan, M.E. Grein, R.T. Schulein, J U Yoon, D.M. Lennon, E.P. Ippen, T.M. Lyszczarz, F.X. Kartner
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  ABSTRACT: We present a comprehensive study of silicon Mach-Zehnder modulators based on carrier injection. Detailed comparisons between simulation results and measurements are made and excellent agreement is obtained for DC and AC characteristics.
  Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 06/2008
• Conference Proceeding: Entire domain based diakoptic method of lines

  G.R. Zhou, D.G. Fang, N.N. Feng
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  ABSTRACT: An entire domain method of lines (EDMoL) is proposed here to take both the advantages of entire domain basis model and method of lines (MoL), which can save computation time significantly. This method is an extension of the triangular basis diakoptic MoL. The formulas of EDMoL are given in detail. Numerical examples and some interesting results are also presented
  Environmental Electromagnetics, 2000. CEEM 2000. Proceedings. Asia-Pacific Conference on; 02/2000
• Conference Proceeding: Analysis of the half-wave voltage and modulation bandwidth of electro-optical modulator considering the effect of conductor loss

  N.N. Feng, G.R. Zhou, D.G. Fang, W.P. Huang, C.L. Xu
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  ABSTRACT: The half-wave voltage V_π and modulator bandwidth Δf of an LiNbO₃ electro-optical modulator considering the effect of conductor loss is analyzed using the generalized method of lines. It is shown numerically that the conductor loss is not important in affecting V_π but is equally important as electrode thickness and buffer layer thickness in affecting Δf.
  Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on; 02/1999
• Conference Proceeding: An efficient analytical formula for analyzing optical waveguide discontinuities

  N.N. Feng, G.R. Zhou, D.G. Fang
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  ABSTRACT: An efficient analytical formula for analyzing optical waveguide discontinuities is presented in this paper. By using the Tappert-Lee approximation and method of lines we get an analytic expression of the square-root operator. The FFT technique is used to accelerate the multiplication of matrices. A comparison to published results shows very good agreement.
  Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on; 02/1999
• Conference Proceeding: Application of full wave discrete image method in two dimensional CPW structure

  G.R. Zhou, N.N. Feng, D.G. Fang
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  ABSTRACT: The main difficulty in the application of the full wave discrete image method in two-dimensional problems is discussed in this paper. The comparison shows that the extraction of surface wave poles is necessary for two-dimensional problems. To keep the robustness, the matrix pencil method is applied. The calculated propagation characteristics of a coplanar waveguide (CPW) structure show the validity of the theory. The current and field distributions of this CPW are also given.
  Computational Electromagnetics and Its Applications, 1999. Proceedings. (ICCEA '99) 1999 International Conference on; 02/1999
• Source

  Available from: Matthew Grein

  Article: High speed analog-to-digital conversion with silicon photonics

  Robert T. Schulein, Matthew E Grein, Jung Uk Yoon, Donna M. Lennon, Michael W. Geis, Theodore M. Lyszczarz, Steven Jay Spector, G.-R. Zhou, Henry Ignatius Smith, Rajeev J. Ram, [......], Marcus Dahlem, J Chen, Hyunil Byun, Jonathan R Birge, Mohammad Araghchini, Reja Amatya, C.W. Holzwarth, J. Shmulovich, A. Hanjani, S. Frolov
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  ABSTRACT: Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a V[subscript pi]L of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density. Defense Advanced Research Projects Agency (contracts W911NF-04-1-0431 and HR0011-05-C-0155) Department of the Air Force (Air Force Contract FA8721-05-C-0002)
  SPIE.
• Source

  Available from: Matthew Grein

  Article: CMOS-Compatible Wideband Silicon Modulator

  S J Spector, M W Geis, G.-R Zhou, M E Grein, R T Schulein, F Gan, M A Popović, J U Yoon, D M Lennon, E P Ippen, F X Kärtner, T M Lyszczarz
  [show abstract] [hide abstract]
  ABSTRACT: A Mach-Zehnder based silicon optical modulator has been demonstrated with a bandwidth of 26 GHz and a VπL of 2 V·cm. The design of this modulator does not require an epitaxial overgrowth.